FR2454473A1 - Procede de production de films de chalcogenures metalliques sur un substrat par action de chalcogene gazeux a chaud sur un film d'oxyde correspondant - Google Patents

Procede de production de films de chalcogenures metalliques sur un substrat par action de chalcogene gazeux a chaud sur un film d'oxyde correspondant

Info

Publication number
FR2454473A1
FR2454473A1 FR8008685A FR8008685A FR2454473A1 FR 2454473 A1 FR2454473 A1 FR 2454473A1 FR 8008685 A FR8008685 A FR 8008685A FR 8008685 A FR8008685 A FR 8008685A FR 2454473 A1 FR2454473 A1 FR 2454473A1
Authority
FR
France
Prior art keywords
oxide film
substrate
production
hot
action
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8008685A
Other languages
English (en)
Other versions
FR2454473B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co
Publication of FR2454473A1 publication Critical patent/FR2454473A1/fr
Application granted granted Critical
Publication of FR2454473B1 publication Critical patent/FR2454473B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229—Composition of the substrate
    • C23C18/1245—Inorganic substrates other than metallic
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1291—Process of deposition of the inorganic material by heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/287—Chalcogenides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/11—Deposition methods from solutions or suspensions
    • C03C2218/112—Deposition methods from solutions or suspensions by spraying
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency
    • Y02P20/133—Renewable energy sources, e.g. sunlight
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Structural Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Photovoltaic Devices (AREA)
  • Chemically Coating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

LA PRESENTE INVENTION CONCERNE LE DOMAINE DE LA PRODUCTION DE FILMS DE CHALCOGENURES METALLIQUES SUR DES SUBSTRATS. CONFORMEMENT AU PROCEDE DE L'INVENTION, ON DEPOSE UN FILM D'OXYDE SUR UN SUBSTRAT PAR PULVERISATION DE LA SOLUTION D'UN SEL METALLIQUE DANS UN MELANGE EAU-SUBSTANCE HYDROCARBONEE SOLUBLE DANS L'EAU. LE FILM D'OXYDE EST ENSUITE SOUMIS A UN TRAITEMENT THERMIQUE EN PRESENCE D'UN CHALCOGENE OU D'UN CHALCOGENURE D'HYDROGENE GAZEUX POUR INDUIRE UN PROCESSUS D'ECHANGE D'IONS PAR LEQUEL LE FILM D'OXYDE METALLIQUE EST TRANSFORME EN FILM DE CHALCOGENURE. LE PROCEDE MIS EN OEUVRE EST PEU COUTEUX. IL PERMET NOTAMMENT D'OBTENIR DES SURFACES SELECTIVEMENT ABSORBANTES TRES EFFICACES POUR LA TRANSFORMATION DE L'ENERGIE SOLAIRE EN ENERGIE THERMIQUE ET IL PEUT ETRE MIS EN OEUVRE POUR PRODUIRE UN DISPOSITIF PHOTOVOLTAIQUE A FILM MINCE POUR LA TRANSFORMATION DE L'ENERGIE LUMINEUSE EN ELECTRICITE.
FR8008685A 1979-04-19 1980-04-18 Procede de production de films de chalcogenures metalliques sur un substrat par action de chalcogene gazeux a chaud sur un film d'oxyde correspondant Granted FR2454473A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/031,421 US4242374A (en) 1979-04-19 1979-04-19 Process for thin film deposition of metal and mixed metal chalcogenides displaying semi-conductor properties

Publications (2)

Publication Number Publication Date
FR2454473A1 true FR2454473A1 (fr) 1980-11-14
FR2454473B1 FR2454473B1 (fr) 1984-01-27

Family

ID=21859370

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8008685A Granted FR2454473A1 (fr) 1979-04-19 1980-04-18 Procede de production de films de chalcogenures metalliques sur un substrat par action de chalcogene gazeux a chaud sur un film d'oxyde correspondant

Country Status (5)

Country Link
US (1) US4242374A (fr)
JP (1) JPS55140705A (fr)
DE (1) DE3015060A1 (fr)
FR (1) FR2454473A1 (fr)
NL (1) NL8002315A (fr)

Cited By (1)

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WO1999048158A1 (fr) * 1998-03-19 1999-09-23 Hahn-Meitner-Institut Berlin Gmbh Procede et dispositif pour produire des couches minces de chalcogenure metallique

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US4681775A (en) * 1982-12-10 1987-07-21 North American Philips Consumer Electronics Corp. CRT with optical window and method
CA1265922A (fr) * 1984-07-27 1990-02-20 Helmut Tributsch Couche photo-active de pyrite, sa preparation et son emploi
JPH0699808B2 (ja) * 1985-12-19 1994-12-07 松下電器産業株式会社 硫化カドミウム薄膜の形成方法
JPH0699809B2 (ja) * 1985-12-19 1994-12-07 松下電器産業株式会社 硫化物薄膜の形成方法
US4996083A (en) * 1987-02-19 1991-02-26 Donnelly Corporation Method for deposition of electrochromic layers
JPS6436086A (en) * 1987-07-31 1989-02-07 Canon Kk Functional deposition film
US4959247A (en) * 1987-12-14 1990-09-25 Donnelly Corporation Electrochromic coating and method for making same
JPH10273783A (ja) * 1997-03-31 1998-10-13 Yazaki Corp カルコパイライト光吸収膜の製造法
US5926362A (en) 1997-05-01 1999-07-20 Wilson Greatbatch Ltd. Hermetically sealed capacitor
US5920455A (en) * 1997-05-01 1999-07-06 Wilson Greatbatch Ltd. One step ultrasonically coated substrate for use in a capacitor
US5894403A (en) * 1997-05-01 1999-04-13 Wilson Greatbatch Ltd. Ultrasonically coated substrate for use in a capacitor
US20030070920A1 (en) * 1997-05-01 2003-04-17 Ashish Shah Electrode for use in a capacitor
US5948176A (en) * 1997-09-29 1999-09-07 Midwest Research Institute Cadmium-free junction fabrication process for CuInSe2 thin film solar cells
US6268014B1 (en) 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
DE19831214C2 (de) * 1998-03-19 2003-07-03 Hahn Meitner Inst Berlin Gmbh Verfahren und Anordnung zur Herstellung dünner Metallchalkogenid-Schichten
US6197365B1 (en) * 1999-03-30 2001-03-06 Xcellsis Gmbh Process for manufacturing a catalytic material
DE19916403C1 (de) * 1999-04-06 2000-10-12 Hahn Meitner Inst Berlin Gmbh Verfahren zur Herstellung dünner, schwer löslicher Beschichtungen
JP2003265962A (ja) * 2002-03-18 2003-09-24 Nittetsu Mining Co Ltd 光触媒およびその製造方法
JP4357801B2 (ja) * 2002-06-25 2009-11-04 日鉄鉱業株式会社 高活性光触媒およびその製造方法
US7026713B2 (en) * 2003-12-17 2006-04-11 Hewlett-Packard Development Company, L.P. Transistor device having a delafossite material
CH697007A5 (fr) * 2004-05-03 2008-03-14 Solaronix Sa Procédé pour produire un composé chalcopyrite en couche mince.
US7833904B2 (en) 2005-06-16 2010-11-16 The Trustees Of Columbia University In The City Of New York Methods for fabricating nanoscale electrodes and uses thereof
US20090169723A1 (en) * 2007-10-02 2009-07-02 University Of Delaware I-iii-vi2 photovoltaic absorber layers
US8613973B2 (en) 2007-12-06 2013-12-24 International Business Machines Corporation Photovoltaic device with solution-processed chalcogenide absorber layer
US7906182B1 (en) 2008-01-17 2011-03-15 University Of South Florida Method of thin film electrospray deposition
US10147604B2 (en) * 2009-10-27 2018-12-04 International Business Machines Corporation Aqueous-based method of forming semiconductor film and photovoltaic device including the film
US20110094557A1 (en) * 2009-10-27 2011-04-28 International Business Machines Corporation Method of forming semiconductor film and photovoltaic device including the film
TWI408825B (zh) * 2010-09-24 2013-09-11 Univ Nat Chiao Tung 一種具有週期性形狀結構透明導電極之太陽能電池裝置
US8119513B1 (en) 2010-11-22 2012-02-21 General Electric Company Method for making cadmium sulfide layer
WO2012107256A1 (fr) 2011-02-10 2012-08-16 Empa Processus de production de pellicules au chalcogénure absorbant la lumière
US20150118487A1 (en) * 2013-10-25 2015-04-30 Colin A. Wolden Plasma-assisted nanofabrication of two-dimensional metal chalcogenide layers
US20160233322A1 (en) * 2015-02-06 2016-08-11 G-Force Nanotechnology Ltd. Method for fabricating chalcogenide films
WO2018044237A1 (fr) * 2016-09-02 2018-03-08 Nanyang Technological University Film de chalcogénure, dispositif le comprenant et son procédé de formation

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US4095006A (en) * 1976-03-26 1978-06-13 Photon Power, Inc. Cadmium sulfide film
US4143235A (en) * 1977-12-30 1979-03-06 Chevron Research Company Cadmium sulfide photovoltaic cell and method of fabrication

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FR2454473B1 (fr) 1984-01-27
DE3015060A1 (de) 1980-10-30
US4242374A (en) 1980-12-30
JPS55140705A (en) 1980-11-04
NL8002315A (nl) 1980-10-21

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