JPS55140246A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55140246A
JPS55140246A JP4823279A JP4823279A JPS55140246A JP S55140246 A JPS55140246 A JP S55140246A JP 4823279 A JP4823279 A JP 4823279A JP 4823279 A JP4823279 A JP 4823279A JP S55140246 A JPS55140246 A JP S55140246A
Authority
JP
Japan
Prior art keywords
layer
reverse bias
type
electrode
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4823279A
Other languages
Japanese (ja)
Other versions
JPS6223459B2 (en
Inventor
Teruo Kusaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4823279A priority Critical patent/JPS55140246A/en
Publication of JPS55140246A publication Critical patent/JPS55140246A/en
Publication of JPS6223459B2 publication Critical patent/JPS6223459B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To increase the withstand voltage of a semicondcutor device by burying an electrode of electric field fixed to bulk potential insulated and isolated from an immersed region insulated from a semiconductor substrate in or in the vicinity of a connecting conductor on the surface of the immersed region in the insulating film. CONSTITUTION:An n<->-type island 1 isolated via an insulating layer 7 is in a support substrate 6, and connecting conductors 8a, 8b are lead from p-type and n<+>-type diffused layers, respectively. An electrode 9 of an electric field ohmic contact through an opening 11 with an insulating film 10 is buried in the film 10 in a shape for cutting a surface inversion layer. The distance l is so set as to sufficiently endure the elongation of a deplection layer via an external reverse bias. The insulating withstand voltage of the film 10 is set at higher than maximum reverse bias of a connector 7a. At this time most the external reverse bias is applied to the vicinity of the preventive pn junction formed by the electrode 9. Since the most the external reverse bias portion is however a low density n<->-type layer, the depletion layer is elongated to alleviate the maixmum electric field intensity in the depletion layer. Therefore, no local damage occurs and the withstand voltage is not lowered.
JP4823279A 1979-04-19 1979-04-19 Semiconductor device Granted JPS55140246A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4823279A JPS55140246A (en) 1979-04-19 1979-04-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4823279A JPS55140246A (en) 1979-04-19 1979-04-19 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55140246A true JPS55140246A (en) 1980-11-01
JPS6223459B2 JPS6223459B2 (en) 1987-05-22

Family

ID=12797687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4823279A Granted JPS55140246A (en) 1979-04-19 1979-04-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55140246A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58124953U (en) * 1981-09-18 1983-08-25 三洋電機株式会社 Semiconductor integrated circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5322384A (en) * 1976-08-13 1978-03-01 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5322384A (en) * 1976-08-13 1978-03-01 Hitachi Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58124953U (en) * 1981-09-18 1983-08-25 三洋電機株式会社 Semiconductor integrated circuit device
JPS6244535Y2 (en) * 1981-09-18 1987-11-25

Also Published As

Publication number Publication date
JPS6223459B2 (en) 1987-05-22

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