JPS55138270A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS55138270A JPS55138270A JP4480979A JP4480979A JPS55138270A JP S55138270 A JPS55138270 A JP S55138270A JP 4480979 A JP4480979 A JP 4480979A JP 4480979 A JP4480979 A JP 4480979A JP S55138270 A JPS55138270 A JP S55138270A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layers
- collector
- junction
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4480979A JPS55138270A (en) | 1979-04-12 | 1979-04-12 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4480979A JPS55138270A (en) | 1979-04-12 | 1979-04-12 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55138270A true JPS55138270A (en) | 1980-10-28 |
JPS6262063B2 JPS6262063B2 (enrdf_load_stackoverflow) | 1987-12-24 |
Family
ID=12701749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4480979A Granted JPS55138270A (en) | 1979-04-12 | 1979-04-12 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55138270A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05190779A (ja) * | 1991-09-24 | 1993-07-30 | Matsushita Electron Corp | 半導体集積回路装置とその製造方法 |
-
1979
- 1979-04-12 JP JP4480979A patent/JPS55138270A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05190779A (ja) * | 1991-09-24 | 1993-07-30 | Matsushita Electron Corp | 半導体集積回路装置とその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6262063B2 (enrdf_load_stackoverflow) | 1987-12-24 |
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