JPS55138259A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55138259A
JPS55138259A JP4423779A JP4423779A JPS55138259A JP S55138259 A JPS55138259 A JP S55138259A JP 4423779 A JP4423779 A JP 4423779A JP 4423779 A JP4423779 A JP 4423779A JP S55138259 A JPS55138259 A JP S55138259A
Authority
JP
Japan
Prior art keywords
layer
hillock
wiring
alloy layer
odd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4423779A
Other languages
Japanese (ja)
Inventor
Nobuki Ibaraki
Kyozo Ide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4423779A priority Critical patent/JPS55138259A/en
Publication of JPS55138259A publication Critical patent/JPS55138259A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Conductive Materials (AREA)

Abstract

PURPOSE:To suppress the occurrence of hillock by a method wherein Ti is made to adhere to an Al wiring layer, and a Ti-Al alloy layer, which contains more than 40% of Ti and has a thickness of less than one-fifth of that of the Al wiring layer. CONSTITUTION:An Al layer 3 is formed by resistance heating and evaporating Al via an oxidized film 2 on an Si substrate 1, and the resistance heating and evaporation of Al and the electron beam heating and evaporation of Ti are simultaneously carried out so as to make an Al-Ti alloy layer. Since the suppression of hillock requires a layer 7 with a thickness of 10 odd-100 odd Angstrom , and since the construction having the reflection factor necessary for visual inspection is that which contains less than 40% of Ti, then it wears a silver white color inclining to green. If an Al-Ti alloy layer 7 is provided on the Al layer 3, it can prevent the occurrence of hillock and the oxidization of the surface, and improve the workability of wiring in addition to connecting wires, then making it easier to make visual inspection while a highly reliable device is obtained.
JP4423779A 1979-04-13 1979-04-13 Semiconductor device Pending JPS55138259A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4423779A JPS55138259A (en) 1979-04-13 1979-04-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4423779A JPS55138259A (en) 1979-04-13 1979-04-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55138259A true JPS55138259A (en) 1980-10-28

Family

ID=12685919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4423779A Pending JPS55138259A (en) 1979-04-13 1979-04-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55138259A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139426A (en) * 1982-02-15 1983-08-18 Fujitsu Ltd Manufacture of semiconductor device
JPH01155023U (en) * 1988-04-12 1989-10-25
CN103165623A (en) * 2011-12-16 2013-06-19 群康科技(深圳)有限公司 Thin film transistor base plate, preparation method thereof and displayer
US9196734B2 (en) 2011-12-16 2015-11-24 Innocom Technology (Shenzhen) Co., Ltd. Thin-film transistor substrate and method for fabricating the same, display

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139426A (en) * 1982-02-15 1983-08-18 Fujitsu Ltd Manufacture of semiconductor device
JPH01155023U (en) * 1988-04-12 1989-10-25
CN103165623A (en) * 2011-12-16 2013-06-19 群康科技(深圳)有限公司 Thin film transistor base plate, preparation method thereof and displayer
US9196734B2 (en) 2011-12-16 2015-11-24 Innocom Technology (Shenzhen) Co., Ltd. Thin-film transistor substrate and method for fabricating the same, display

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