JPS55132129A - Semiconductor switch break control system - Google Patents

Semiconductor switch break control system

Info

Publication number
JPS55132129A
JPS55132129A JP3914479A JP3914479A JPS55132129A JP S55132129 A JPS55132129 A JP S55132129A JP 3914479 A JP3914479 A JP 3914479A JP 3914479 A JP3914479 A JP 3914479A JP S55132129 A JPS55132129 A JP S55132129A
Authority
JP
Japan
Prior art keywords
current
gate
circuit
state
scr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3914479A
Other languages
Japanese (ja)
Other versions
JPS6019854B2 (en
Inventor
Tetsuo Yoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3914479A priority Critical patent/JPS6019854B2/en
Publication of JPS55132129A publication Critical patent/JPS55132129A/en
Publication of JPS6019854B2 publication Critical patent/JPS6019854B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13Modifications for switching at zero crossing
    • H03K17/136Modifications for switching at zero crossing in thyristor switches

Landscapes

  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To make it possible to simplify circuit constitution while lessening the generation of inverse electromotive force due to inductive load control, by stopping gate drive when a signal current is inverted in polarity or at zero level. CONSTITUTION:In the circuit consisting of signal source 1, inductive load 2, semiconductor switch circuit 3, gate driving circuit 4, gate drive control circuit 5, etc., the application of an OFF control signal to control terminal CNT stops the gate drive of one SCR where no gate signal flows and also holds the other SCR in an On state by supplying the gate current in succession, so that even if a passing signal (load) current would decrease below a holding current value, the operation will be controlled to prevent on OFF state from being set immediately. Since a reverse stop state is set when the passing current value further decreases and the current direction is inverted, the other SCR is placed in the OFF state and no gate current is supplied to SCR, so that circuit 3 will be in the OFF state on the whole.
JP3914479A 1979-03-30 1979-03-30 Semiconductor switch cutoff control device Expired JPS6019854B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3914479A JPS6019854B2 (en) 1979-03-30 1979-03-30 Semiconductor switch cutoff control device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3914479A JPS6019854B2 (en) 1979-03-30 1979-03-30 Semiconductor switch cutoff control device

Publications (2)

Publication Number Publication Date
JPS55132129A true JPS55132129A (en) 1980-10-14
JPS6019854B2 JPS6019854B2 (en) 1985-05-18

Family

ID=12544903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3914479A Expired JPS6019854B2 (en) 1979-03-30 1979-03-30 Semiconductor switch cutoff control device

Country Status (1)

Country Link
JP (1) JPS6019854B2 (en)

Also Published As

Publication number Publication date
JPS6019854B2 (en) 1985-05-18

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