JPS55127021A - Deposition apparatus for gaseous phase reaction - Google Patents

Deposition apparatus for gaseous phase reaction

Info

Publication number
JPS55127021A
JPS55127021A JP3592779A JP3592779A JPS55127021A JP S55127021 A JPS55127021 A JP S55127021A JP 3592779 A JP3592779 A JP 3592779A JP 3592779 A JP3592779 A JP 3592779A JP S55127021 A JPS55127021 A JP S55127021A
Authority
JP
Japan
Prior art keywords
reactor tube
films
crack
rough
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3592779A
Other languages
Japanese (ja)
Inventor
Hiroyuki Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3592779A priority Critical patent/JPS55127021A/en
Publication of JPS55127021A publication Critical patent/JPS55127021A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent the occurrence of a crack on the surface and the exfoliation of a deposition material attached on the surface by forming a rough surface of the member composing such devices as a reactor tube and a board. CONSTITUTION:A near frosted glass and rough inside surface 6a is formed in the inside of the surface of a quartz reactor tube 6 by blowing a quartz powder. If an SiO2 film 7 is precipitated on the reactor tube 6, no crack will cause on the SiO2 film 7 attached to the inside of the surface 6a and the surface 6a and the scattering of the precipitation material contained small pieces of the quartz will not a occur. If the inside of the surface of the stainless steel reactor tube is made rough, the exfoliation of the attached precipitation film is almost eliminated and the crack will not occur for the reactor tube. As the reacted and precipitated thin films, the same effect will be obtained for simplex films such as an Si nitride film, poly Si, phosporus pentaoxide, mixed films, multilayer films and others.
JP3592779A 1979-03-24 1979-03-24 Deposition apparatus for gaseous phase reaction Pending JPS55127021A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3592779A JPS55127021A (en) 1979-03-24 1979-03-24 Deposition apparatus for gaseous phase reaction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3592779A JPS55127021A (en) 1979-03-24 1979-03-24 Deposition apparatus for gaseous phase reaction

Publications (1)

Publication Number Publication Date
JPS55127021A true JPS55127021A (en) 1980-10-01

Family

ID=12455660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3592779A Pending JPS55127021A (en) 1979-03-24 1979-03-24 Deposition apparatus for gaseous phase reaction

Country Status (1)

Country Link
JP (1) JPS55127021A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170019A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Manufacturing device for semiconductor device
JPS59125615A (en) * 1982-12-28 1984-07-20 Fujitsu Ltd Manufacture of semiconductor device
WO1998044538A2 (en) * 1997-03-27 1998-10-08 Heraeus Quarzglas Gmbh Quartz glass component used in the production of semiconductors
US6425168B1 (en) * 1994-09-30 2002-07-30 Shin-Etsu Handotai Co., Ltd. Quartz glass jig for heat-treating semiconductor wafers and method for producing same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170019A (en) * 1982-03-31 1983-10-06 Fujitsu Ltd Manufacturing device for semiconductor device
JPH029445B2 (en) * 1982-03-31 1990-03-02 Fujitsu Ltd
JPS59125615A (en) * 1982-12-28 1984-07-20 Fujitsu Ltd Manufacture of semiconductor device
US6425168B1 (en) * 1994-09-30 2002-07-30 Shin-Etsu Handotai Co., Ltd. Quartz glass jig for heat-treating semiconductor wafers and method for producing same
WO1998044538A2 (en) * 1997-03-27 1998-10-08 Heraeus Quarzglas Gmbh Quartz glass component used in the production of semiconductors
WO1998044538A3 (en) * 1997-03-27 1998-12-30 Heraeus Quarzglas Quartz glass component used in the production of semiconductors

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