JPS55124236A - Semiconductor substrate - Google Patents

Semiconductor substrate

Info

Publication number
JPS55124236A
JPS55124236A JP3260979A JP3260979A JPS55124236A JP S55124236 A JPS55124236 A JP S55124236A JP 3260979 A JP3260979 A JP 3260979A JP 3260979 A JP3260979 A JP 3260979A JP S55124236 A JPS55124236 A JP S55124236A
Authority
JP
Japan
Prior art keywords
damage
section
semiconductor substrate
extend
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3260979A
Other languages
Japanese (ja)
Inventor
Mikio Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3260979A priority Critical patent/JPS55124236A/en
Publication of JPS55124236A publication Critical patent/JPS55124236A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To relieve and absorb the crystalline stress which varies according to a radial position and the heat-treatment residual stress arising from a semiconductor formation by providng a prescribed damage layer at the rear side section of a semiconductor substrate from the center section toward the circumference section. CONSTITUTION:By applying a carbonic acid gas laser or the like, or by giving a mechianical damage such as sand blasting and scratching, or by performing a diffusion of impurites or the like by ion implantation, a damage is given to a semiconductor substrate. In this case, the extend of the damage varies according to the heat- treatment condition of a semiconductor device, and usually it is 2-3mu at the weak section and 4-5mu at the strong section, and as shown in the illustration, the extent of the damage is gradually increased toward the direction of circumference section. Besides, the extend of damage is changed by rotating a substrate and chaniging the movement speed of the source to be damaged.
JP3260979A 1979-03-19 1979-03-19 Semiconductor substrate Pending JPS55124236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3260979A JPS55124236A (en) 1979-03-19 1979-03-19 Semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3260979A JPS55124236A (en) 1979-03-19 1979-03-19 Semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS55124236A true JPS55124236A (en) 1980-09-25

Family

ID=12363588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3260979A Pending JPS55124236A (en) 1979-03-19 1979-03-19 Semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS55124236A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5395770A (en) * 1989-09-29 1995-03-07 Shin-Etsu Handotai Co., Ltd. Method of controlling misfit dislocation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5395770A (en) * 1989-09-29 1995-03-07 Shin-Etsu Handotai Co., Ltd. Method of controlling misfit dislocation

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