JPS55122874A - Etching method for copper base alloy - Google Patents

Etching method for copper base alloy

Info

Publication number
JPS55122874A
JPS55122874A JP2918379A JP2918379A JPS55122874A JP S55122874 A JPS55122874 A JP S55122874A JP 2918379 A JP2918379 A JP 2918379A JP 2918379 A JP2918379 A JP 2918379A JP S55122874 A JPS55122874 A JP S55122874A
Authority
JP
Japan
Prior art keywords
sample
microscopic examination
water solution
phase
copper base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2918379A
Other languages
Japanese (ja)
Other versions
JPS5817425B2 (en
Inventor
Yuichiro Kuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SANPO SHINDO KOGYO KK
Original Assignee
SANPO SHINDO KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SANPO SHINDO KOGYO KK filed Critical SANPO SHINDO KOGYO KK
Priority to JP2918379A priority Critical patent/JPS5817425B2/en
Publication of JPS55122874A publication Critical patent/JPS55122874A/en
Publication of JPS5817425B2 publication Critical patent/JPS5817425B2/en
Expired legal-status Critical Current

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  • Sampling And Sample Adjustment (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE: To easily make the sample for microscopic examination easy to discriminated the color of α, β phase etc., by successively treating copper base alloy sampling carried out pretreatment by buffing by etching treatment solution, such as treatment solution of H2O2 etc., acetic acid water solution or sodium thiosulfate water solution etc.
CONSTITUTION: Sample of copper base alloy containing lead, iron etc., is sampled by the cutting process 5 and is finished completely removing minute streak etc. on the surface of microscopic examination by the polishing process 7 after grinding by the grinding process 6. Next, the sample is dipped in treating liquid composed of two component water solution of NH3 and H2O2 in a short time at first and then, yellowish brown thin film on the microscopic examination surface, is removed by dipping in acetic acid water solution and moreover, the sample is dipped in sodium thiosulfate solution at the etching process 8. As a result of it, α phase of the alloy is colored in white, β phase in yellowish brown, Pb grain in black and Fe grain in blue and then, the sample for microscopic examination easy to discriminate added element, is made efficiently in a short time through the drying process 9.
COPYRIGHT: (C)1980,JPO&Japio
JP2918379A 1979-03-12 1979-03-12 Etching method for copper-based alloys Expired JPS5817425B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2918379A JPS5817425B2 (en) 1979-03-12 1979-03-12 Etching method for copper-based alloys

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2918379A JPS5817425B2 (en) 1979-03-12 1979-03-12 Etching method for copper-based alloys

Publications (2)

Publication Number Publication Date
JPS55122874A true JPS55122874A (en) 1980-09-20
JPS5817425B2 JPS5817425B2 (en) 1983-04-07

Family

ID=12269089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2918379A Expired JPS5817425B2 (en) 1979-03-12 1979-03-12 Etching method for copper-based alloys

Country Status (1)

Country Link
JP (1) JPS5817425B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7183203B2 (en) 2000-01-25 2007-02-27 Kabushiki Kaisha Toshiba Method of plating a metal or metal compound on a semiconductor substrate that includes using the same main component in both plating and etching solutions
CN103575585A (en) * 2013-10-11 2014-02-12 西北稀有金属材料研究院 Low-beryllium copper alloy metallographic corrosive agent and display method of metallographic structure of low-beryllium copper alloy
CN113235092A (en) * 2021-05-08 2021-08-10 九江德福科技股份有限公司 Micro-etching solution for copper foil slice observation, preparation method thereof and micro-etching method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7183203B2 (en) 2000-01-25 2007-02-27 Kabushiki Kaisha Toshiba Method of plating a metal or metal compound on a semiconductor substrate that includes using the same main component in both plating and etching solutions
CN103575585A (en) * 2013-10-11 2014-02-12 西北稀有金属材料研究院 Low-beryllium copper alloy metallographic corrosive agent and display method of metallographic structure of low-beryllium copper alloy
CN103575585B (en) * 2013-10-11 2016-08-31 西北稀有金属材料研究院 A kind of low beryllium content copper alloy metallographic etching agent and the display methods of low beryllium content copper alloy metallographic structure
CN113235092A (en) * 2021-05-08 2021-08-10 九江德福科技股份有限公司 Micro-etching solution for copper foil slice observation, preparation method thereof and micro-etching method

Also Published As

Publication number Publication date
JPS5817425B2 (en) 1983-04-07

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