JPS55121653A - Method of treating surface of semiconductor substrate - Google Patents

Method of treating surface of semiconductor substrate

Info

Publication number
JPS55121653A
JPS55121653A JP2969979A JP2969979A JPS55121653A JP S55121653 A JPS55121653 A JP S55121653A JP 2969979 A JP2969979 A JP 2969979A JP 2969979 A JP2969979 A JP 2969979A JP S55121653 A JPS55121653 A JP S55121653A
Authority
JP
Japan
Prior art keywords
solution
substrate
hno3
semiconductor substrate
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2969979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6125211B2 (enrdf_load_stackoverflow
Inventor
Hiroo Sasaki
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2969979A priority Critical patent/JPS55121653A/ja
Publication of JPS55121653A publication Critical patent/JPS55121653A/ja
Publication of JPS6125211B2 publication Critical patent/JPS6125211B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP2969979A 1979-03-14 1979-03-14 Method of treating surface of semiconductor substrate Granted JPS55121653A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2969979A JPS55121653A (en) 1979-03-14 1979-03-14 Method of treating surface of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2969979A JPS55121653A (en) 1979-03-14 1979-03-14 Method of treating surface of semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS55121653A true JPS55121653A (en) 1980-09-18
JPS6125211B2 JPS6125211B2 (enrdf_load_stackoverflow) 1986-06-14

Family

ID=12283351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2969979A Granted JPS55121653A (en) 1979-03-14 1979-03-14 Method of treating surface of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS55121653A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990013911A1 (fr) * 1989-05-07 1990-11-15 Tadahiro Ohmi Procede de formation d'une pellicule d'oxyde
WO1990013912A1 (fr) * 1989-05-07 1990-11-15 Tadahiro Ohmi Pellicule d'oxyde de silicium et semi-conducteur pourvu de cette pellicule
JPH0661254A (ja) * 1992-08-07 1994-03-04 Toshiba Corp 半導体装置の製造方法
US5585291A (en) * 1993-12-02 1996-12-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device containing a crystallization promoting material
JP2594702B2 (ja) * 1989-05-07 1997-03-26 忠弘 大見 シリコン酸化膜及びそれを備えた半導体装置
JPH09232539A (ja) * 1996-02-28 1997-09-05 Nec Corp 半導体装置の製造方法
JPH1084089A (ja) * 1996-06-24 1998-03-31 Hyundai Electron Ind Co Ltd 半球形シリコンの製造方法及び半球形シリコンを利用した半導体素子のキャパシタの製造方法
US5869362A (en) * 1993-12-02 1999-02-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7595230B2 (en) 2004-02-16 2009-09-29 Sharp Kabushiki Kaisha Thin film transistor, method of manufacturing same, display device, method of modifying an oxide film, method of forming an oxide film, semiconductor device, method of manufacturing semiconductor device, and apparatus for manufacturing semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990013912A1 (fr) * 1989-05-07 1990-11-15 Tadahiro Ohmi Pellicule d'oxyde de silicium et semi-conducteur pourvu de cette pellicule
US5360768A (en) * 1989-05-07 1994-11-01 Tadahiro Ohmi Method of forming oxide film
JP2594702B2 (ja) * 1989-05-07 1997-03-26 忠弘 大見 シリコン酸化膜及びそれを備えた半導体装置
WO1990013911A1 (fr) * 1989-05-07 1990-11-15 Tadahiro Ohmi Procede de formation d'une pellicule d'oxyde
JPH0661254A (ja) * 1992-08-07 1994-03-04 Toshiba Corp 半導体装置の製造方法
US5869362A (en) * 1993-12-02 1999-02-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US5585291A (en) * 1993-12-02 1996-12-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device containing a crystallization promoting material
JPH09232539A (ja) * 1996-02-28 1997-09-05 Nec Corp 半導体装置の製造方法
JPH1084089A (ja) * 1996-06-24 1998-03-31 Hyundai Electron Ind Co Ltd 半球形シリコンの製造方法及び半球形シリコンを利用した半導体素子のキャパシタの製造方法
US5909625A (en) * 1996-06-24 1999-06-01 Hyundai Electronics Industries Co., Ltd. Method for forming layer of hemispherical grains and for fabricating a capacitor of a semiconductor device
US6238995B1 (en) 1996-06-24 2001-05-29 Hyundai Electronics Industries Co., Ltd. Method for forming layer of hemispherical grains and for fabricating a capacitor of a semiconductor device
US7595230B2 (en) 2004-02-16 2009-09-29 Sharp Kabushiki Kaisha Thin film transistor, method of manufacturing same, display device, method of modifying an oxide film, method of forming an oxide film, semiconductor device, method of manufacturing semiconductor device, and apparatus for manufacturing semiconductor device
US8039403B2 (en) 2004-02-16 2011-10-18 Sharp Kabushiki Kaisha Thin film transistor, method of manufacturing same, display device, method of modifying an oxide film, method of forming an oxide film, semiconductor device, method of manufacturing semiconductor device, and apparatus for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS6125211B2 (enrdf_load_stackoverflow) 1986-06-14

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