JPS55115335A - Method of forming multiistage mesa in semiconductor structure - Google Patents
Method of forming multiistage mesa in semiconductor structureInfo
- Publication number
- JPS55115335A JPS55115335A JP1966180A JP1966180A JPS55115335A JP S55115335 A JPS55115335 A JP S55115335A JP 1966180 A JP1966180 A JP 1966180A JP 1966180 A JP1966180 A JP 1966180A JP S55115335 A JPS55115335 A JP S55115335A
- Authority
- JP
- Japan
- Prior art keywords
- multiistage
- mesa
- forming
- semiconductor structure
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
- H01L27/0694—Integrated circuits having a three-dimensional layout comprising components formed on opposite sides of a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Bipolar Transistors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1414479A | 1979-02-22 | 1979-02-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55115335A true JPS55115335A (en) | 1980-09-05 |
Family
ID=21763796
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1966180A Pending JPS55115335A (en) | 1979-02-22 | 1980-02-18 | Method of forming multiistage mesa in semiconductor structure |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS55115335A (en) |
DE (1) | DE3005627A1 (en) |
FR (1) | FR2449971A1 (en) |
GB (1) | GB2042805A (en) |
IT (1) | IT1212404B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8624637D0 (en) * | 1986-10-14 | 1986-11-19 | Emi Plc Thorn | Electrical device |
US4996627A (en) * | 1989-01-30 | 1991-02-26 | Dresser Industries, Inc. | High sensitivity miniature pressure transducer |
EP2717314A1 (en) * | 2012-10-03 | 2014-04-09 | ABB Technology AG | Method of producing a junction termination for a power semiconductor device and corresponding power semiconductor device |
FR2998090A1 (en) * | 2013-06-26 | 2014-05-16 | Commissariat Energie Atomique | Method for structuring material surface of substrate for producing e.g. nanometric patterns on surface for LEDs, involves forming patterns due to difference between etch selectivity of material and changed etch selectivity of regions |
FR3030876B1 (en) * | 2014-12-22 | 2017-12-15 | Commissariat Energie Atomique | METHOD OF MAKING REASONS |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL153947B (en) * | 1967-02-25 | 1977-07-15 | Philips Nv | PROCEDURE FOR MANUFACTURING SEMICONDUCTOR DEVICES, USING A SELECTIVE ELECTROLYTIC ETCHING PROCESS AND OBTAINING SEMI-CONDUCTOR DEVICE BY APPLICATION OF THE PROCESS. |
NL162254B (en) * | 1968-11-29 | 1979-11-15 | Philips Nv | SEMI-CONDUCTOR DEVICE FOR CONVERSION OF MECHANICAL VOLTAGES INTO ELECTRICAL SIGNALS AND METHOD OF MANUFACTURING THIS. |
GB1211499A (en) * | 1969-03-07 | 1970-11-04 | Standard Telephones Cables Ltd | A method of manufacturing semiconductor devices |
NL180265C (en) * | 1976-06-21 | 1987-01-16 | Gen Electric | SEMICONDUCTOR FOR HIGH VOLTAGE. |
JPS5360580A (en) * | 1976-11-11 | 1978-05-31 | Nec Corp | Etching method of semiconductor material |
JPS53120280A (en) * | 1977-03-30 | 1978-10-20 | Toshiba Corp | Manufacture of semiconductor device |
-
1980
- 1980-01-29 IT IT8019547A patent/IT1212404B/en active
- 1980-02-15 DE DE19803005627 patent/DE3005627A1/en not_active Withdrawn
- 1980-02-18 JP JP1966180A patent/JPS55115335A/en active Pending
- 1980-02-19 GB GB8005581A patent/GB2042805A/en not_active Withdrawn
- 1980-02-21 FR FR8003835A patent/FR2449971A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2042805A (en) | 1980-09-24 |
DE3005627A1 (en) | 1980-09-04 |
IT8019547A0 (en) | 1980-01-29 |
IT1212404B (en) | 1989-11-22 |
FR2449971A1 (en) | 1980-09-19 |
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