JPS55111136A - Processing method of semiconductor material - Google Patents

Abstract

PURPOSE: To prevent the change in quality in the surface of a semiconductor wafer affected by the process and save the troublesome care about the waste liquid disposal by a method wherein the processing work about a semiconductor wafer is performed only by the grinding process and the polishing process.

CONSTITUTION: For instance, both surface of a semiconductor wafer which is sliced in 0.2W0.5mm thickness is ground with diamond grindstone of #200 grain size, and eigher surface of the wafer is processed by the second drinding with s diamond grindstone of #1,000W1,500 grain size. This second grinding processed surface is processed by polishing finally. By this way, the more even surface compared with the etched surface can be accomplished. Thus the necessary time for the polishing process can be reduced, the influence by the abrasive grain separated in the grinding process from the fixed abrasive grain is avoided, and the thickness of the quality changed layer affected by processing can be reduced. Moreover the process can be released from the problem of waste liquid disposal, as the chemical treatment is not adopted in it. Instead of the diamond, a boron nitride grindstone of nearly same grade may be used as the grindstone.

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