JPS55110089A - Laser light emitting element - Google Patents

Laser light emitting element

Info

Publication number
JPS55110089A
JPS55110089A JP1598679A JP1598679A JPS55110089A JP S55110089 A JPS55110089 A JP S55110089A JP 1598679 A JP1598679 A JP 1598679A JP 1598679 A JP1598679 A JP 1598679A JP S55110089 A JPS55110089 A JP S55110089A
Authority
JP
Japan
Prior art keywords
laser light
zno
level
crucible
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1598679A
Other languages
Japanese (ja)
Other versions
JPS5719585B2 (en
Inventor
Toshinori Takagi
Kakuei Matsubara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Futaba Corp
Original Assignee
Futaba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Futaba Corp filed Critical Futaba Corp
Priority to JP1598679A priority Critical patent/JPS55110089A/en
Priority to DE3005536A priority patent/DE3005536C2/en
Priority to GB8005349A priority patent/GB2044519B/en
Publication of JPS55110089A publication Critical patent/JPS55110089A/en
Publication of JPS5719585B2 publication Critical patent/JPS5719585B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain red-color laser light, by the method wherein a very small quantity of Li is added to single crystalline ZnO, thereby an impurity level of a narrow energy band is formed in ZnO and is actively utilized. CONSTITUTION:High-purity Zn and metal Li, 0.001-10wt% with respect to Zn, preferably, 0.1-0.5wt%, are enclosed in a crucible. This is heated and the material is vaporized. Single crystalline sapphire 4 is made a substrate and this is supported by holder 3. The current in filament 5 is set at about 300mA, the acceleration voltage at about 1kV, and the substrate temperature at about 300 deg.C. After introducing O2 gas, the ambient pressure of crucible 1 is set at about 8X10<-4> torr. Then, epitaxial film 13 of Zn added with Li is formed. By this, an impurity level of an extremely narrow energy band is formed in Zn by means of Li. This level is made a basic condition. By utilizing the transition between this and the condition of stable level formed by the oxygen absence center in ZnO, red-color laser light is obtained, and the half-value width of the light emission peak at normal-temperature operation is narrow.
JP1598679A 1979-02-16 1979-02-16 Laser light emitting element Granted JPS55110089A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1598679A JPS55110089A (en) 1979-02-16 1979-02-16 Laser light emitting element
DE3005536A DE3005536C2 (en) 1979-02-16 1980-02-14 Laser element
GB8005349A GB2044519B (en) 1979-02-16 1980-02-18 Laser emission element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1598679A JPS55110089A (en) 1979-02-16 1979-02-16 Laser light emitting element

Publications (2)

Publication Number Publication Date
JPS55110089A true JPS55110089A (en) 1980-08-25
JPS5719585B2 JPS5719585B2 (en) 1982-04-23

Family

ID=11903982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1598679A Granted JPS55110089A (en) 1979-02-16 1979-02-16 Laser light emitting element

Country Status (3)

Country Link
JP (1) JPS55110089A (en)
DE (1) DE3005536C2 (en)
GB (1) GB2044519B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS647685A (en) * 1987-06-30 1989-01-11 Komatsu Mfg Co Ltd Manufacture of solid-state laser and its manufacture
WO2000016411A1 (en) * 1998-09-10 2000-03-23 Rohm Co., Ltd. Semiconductor light-emitting device and method for manufacturing the same
EP1199755A1 (en) * 1999-07-26 2002-04-24 National Institute of Advanced Industrial Science and Technology ZnO COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND PRODUCTION METHOD THEREOF

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539687A (en) * 1982-12-27 1985-09-03 At&T Bell Laboratories Semiconductor laser CRT
JP3351477B2 (en) * 1993-02-04 2002-11-25 理化学研究所 Solid laser crystal thin film forming method and solid laser crystal thin film forming apparatus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435920B2 (en) * 1974-06-10 1979-11-06

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS647685A (en) * 1987-06-30 1989-01-11 Komatsu Mfg Co Ltd Manufacture of solid-state laser and its manufacture
WO2000016411A1 (en) * 1998-09-10 2000-03-23 Rohm Co., Ltd. Semiconductor light-emitting device and method for manufacturing the same
EP1199755A1 (en) * 1999-07-26 2002-04-24 National Institute of Advanced Industrial Science and Technology ZnO COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND PRODUCTION METHOD THEREOF
US6674098B1 (en) 1999-07-26 2004-01-06 National Institute Of Advanced Industrial Science And Technology ZnO compound semiconductor light emitting element
EP1199755A4 (en) * 1999-07-26 2004-10-20 Nat Inst Of Advanced Ind Scien ZnO COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND PRODUCTION METHOD THEREOF
US6987029B2 (en) 1999-07-26 2006-01-17 National Institute Of Advanced Industrial Science And Technology ZnO based compound semiconductor light emitting device and method for manufacturing the same
EP1912298A1 (en) * 1999-07-26 2008-04-16 National Institute of Advanced Industrial Science and Technology ZnO based compound semiconductor light emitting device and method for manufacturing the same
US7605012B2 (en) 1999-07-26 2009-10-20 National Institute of Advanced Industrial Science & Tech. ZnO based compound semiconductor light emitting device and method for manufacturing the same

Also Published As

Publication number Publication date
DE3005536C2 (en) 1982-10-21
JPS5719585B2 (en) 1982-04-23
GB2044519B (en) 1983-02-09
GB2044519A (en) 1980-10-15
DE3005536A1 (en) 1980-08-21

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