JPS6247175A - Manufacture of semiconductor light emitting device - Google Patents

Abstract

PURPOSE:To stably manufacture a semiconductor device which emits & blue light in a mass production by laminating an N-type low resistance and a high resistance ZnSySe1-y layer by an MOCVD method by an organic zinc compound formed by a prescribed method, and implanting a P-type dopant to form a P-N junction. CONSTITUTION:After a mixture which contains excess (1.05-1.2 equivalent ratio) of low boiling point component of R1Zn and R2Se (where R is alkyl group of CH3, etc.) is thermally reacted at 0-40 deg.C for 10-180min, matured at 30-80 deg.C for 10-120min, excess component is distilled, and removed to obtain an organic zinc compound as a zinc source. A low resistance N-type ZnSySe1-y is epitaxially grown by organic zinc compound, carrier gas (He or H2), H2Se or H2S gas, or triethyl aluminum gas. Then, a non-doped high resistance ZnSnSe1-y layer is formed by an MOCVD method. Then, N, P, or Ag is ion implanted as P-type dopant to form a P-type ZnSySe1-y layer, thereby manufacturing a P-N junction.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor light emitting device that emits blue light.

[Summary of the invention]

The present invention is based on the attack type Z n S y S e 1-y (0
≦y≦1) and p-type Zn87Se1-7 (0≦y≦1
) In the manufacturing method of a semiconductor light-emitting device that emits blue light using a p-s junction formed by the method, dialkylzinc and dialkylselenium are mixed in an approximately excessive amount of their low boiling point components, and then reacted and aged by heating. After that, an organometallic vapor phase pyrolysis method (MOCVD method) using an organozinc compound, which is an adduct of dialkylzinc and dialkylselenium obtained by distilling off excess components, is used as a zinc source.
a step of forming a low-resistance 91-type ZnElyBel-y layer by the method, a step of forming a non-doped high-resistance Zn5yBel-y layer by the MOOVD method, and a step of forming the high-resistance Zn5yBel-y layer by the MOOVD method.
A p-type dopant is introduced into the 113yS81-7 layer by ion implantation or thermal diffusion to form a low-resistance P-type ZnSy.
By creating a p-s junction through the process of forming a Set-y layer, it is possible to produce a semiconductor light-emitting device that emits blue light.

[Conventional technology]

An outline of semiconductor light emitting devices that emit blue light that have been reported or put into practical use will be described below.

1. A light emitting device having a p-s junction formed by diffusing a dopant into a bulk Zn5e single crystal.

(For example, J. Appl. Phys., □, (198
5) 2210° Published Patent Publication 1983-6583) Z A light emitting device having a p-% junction formed by diffusing a dopant into a bulk Zn5yS81-y single crystal.

(For example, A p p 1 , P h 78 , T
J. et.al., 27 (1975) 74) p-type dopants such as silicon (IN) and phosphorus (P) were added to the low-resistance field-type Zrlθ single crystal by ion implantation, and P was added to the surface layer. - p-type Zn8θ layer formed -
A light emitting device having an s junction. (For example, J, Appl,
Phys, 48-977) 196. J, App
(1974) 1444) 4. A light emitting device having an MIS structure in which an insulating layer and an electrode layer are laminated on a bulk culm-type ZnSySel-y single crystal. (
For example, Appl, Phys, TJθ11. .

27 (1975)? S97. Japan, J, App
l, Phys.

15 (1974) 357. Japan,,T,App
l, Phys.

16 (1977) 77, reference) 5.5-type GaN with an insulating layer and an electrode layer stacked on it.
A light-emitting device having an S structure. (For example, see Nikkei Electronics, May 11, 1981, P. 82.) & 810 A light emitting device using a ps junction.

((For example, Nikkei Electronics, May 2, 1979)
(Refer to No. 8 issue F-111) [Problems to be solved by the invention] The above-mentioned prior art has the following problems.

B. Prior Art 1 and 2: Bulk crystals, which are currently considered extremely difficult to enlarge, are used as the starting material, and the dopant diffusion process is performed in a closed system in a batch process. poor process reproducibility.

口 Prior art 5... Same as prior art 1.2, it uses bulk crystals, so mass production is poor. Furthermore, since a part of the duck-type crystal is changed to P-type by ion implantation, a high resistance layer is formed near the p% junction surface, which deteriorates the characteristics of the light emitting device.

C. Prior art 4 and 5... The light emitting device has an MIS structure, and light emission occurs by injection through an insulating layer or recombination of minority carriers, so p
Compared to conventional techniques 1 and 2 in which light is emitted by recombining majority carriers in the vicinity of the n-junction surface, the luminous efficiency is theoretically lower.

2. Conventional technology 6... Since 810 is an indirect transition type semiconductor, it is difficult to improve the luminous efficiency, and mass production is also difficult because large diameter substrates of s i and o cannot be obtained. poor.

Therefore, the present invention aims to solve the above-mentioned problems in the prior art, and its purpose is to use ZnSySe, a direct transition semiconductor that can be expected to have high luminous efficiency.
A semiconductor light emitting device having a p-s junction can be fabricated using a GaA3. G
It is produced on aP, Si, etc. by the MOOVD method using an organozinc compound, which is an adduct of dialkylzinc and dialkylselenium, as a zinc source, which is excellent in mass production and controllability of crystal growth, and provides a high-quality epitaxial film. The goal is to produce semiconductor light-emitting devices that emit blue light using mice.

[Failure to solve the problem]

In the method for manufacturing a semiconductor light emitting device according to the present invention, audience-type ZnSySel-y (0≦y≦1) and P-type ZnSy
When manufacturing a semiconductor light emitting device that emits blue light using a P-calculated junction formed by Set-y (0≦y≦1), dialkylzinc and dialkylselenium are used in an excessive amount of the lower boiling point component of both. An organometallic vapor phase pyrolysis method CMOOVD method in which the zinc source is an organozinc compound which is an adduct of dialkylzinc and dialkylselenium obtained by mixing, reacting and aging by heating, and removing excess components by distillation. ) to calculate the low resistance - type Zn5ySa
a step of forming a 1-y layer, a step of forming a non-doped high resistance ZnS7S61-y layer by the MOOVD method;
A P-type dopant is introduced into the high-resistance ZnSySel-y layer by ion implantation to form a low-resistance P-type Zn5y8θ.
The method is characterized in that a p-s junction is produced by a step of forming a 1-y layer.

〔Example〕

A method for producing an organozinc compound comprising an adduct used in the present invention will be explained.

Dialkylzinc (Rzzn) and dialkylselenium (Rzzn)
The adduct of 2Se) is produced as a result of a one-to-one acid-base reaction between R2Zn as an electron acceptor and R2Se as an electron donor, and has the structure RzZn-8e R2. The following steps are required to produce the adduct.

R2Zn and R25e are mixed in such a way that the low-boiling point component is generally in excess, preferably the ratio of the low-boiling point component to the high-boiling point component is 1.
．． 0.05 to 1.2 equivalent ratio, and both are heated below the boiling point of the low boiling point component at about 0°C to 40°C for 10 minutes to 5 hours, preferably at 10 to 35°C for 50 minutes to 1 hour. react to.

After that, in order to complete the reaction, the temperature was gradually increased to 30 to 8
Aging is performed at 0° C. for 10 minutes to 2 hours, preferably 10 to 30 minutes to 1 hour.

Finally, excess components are removed by distillation.

The formation of adducts can be confirmed by the following facts.

(1) Heat is generated by mixing the two.

(2) The vapor pressure-temperature curve of the adduct produced is different from both of the starting materials R11zn and R2Se.

(8) The weight of the remaining layer obtained by subtracting the distilled excess component from the raw material charging cap corresponds to the weight assuming that uzzn and R2H are 111 and form an adduct.

As a specific example, (oas)xzn and (oHs)
adduct consisting of xse (oHs) snow Zn-Be
(OHM)1 will be described.

500- (oas) xse in a round bottom flask 655r (
[Lsss mol)] while stirring (OH3) gZ
nsa5r (α613 mol) was added dropwise using dropwise a-) to react. The reaction was exothermic and generated a large amount of heat.

The reaction temperature was controlled at 8 to 15°C, and the reaction was carried out for 40 minutes. After that, the temperature was gradually increased at a rate of 15℃/hour, and at 45℃
Time aged. Thereafter, unnecessary excess content was removed by distillation. The product was 118v.

FIG. 1 shows the vapor pressure-temperature characteristics of the obtained adduct. The horizontal axis 1 is temperature, and the vertical axis 2 is vapor pressure.

Solid line 3 is the adduct, and broken line 4.5 is the raw material B.
The vapor pressure characteristics of e(OH3)2 and (aHa)zZn are shown.

Table 1 also shows the vapor pressure values at typical temperatures.

(Table 1) Further, the adducts shown in Table 2 were obtained by going through the same steps.

An example of manufacturing a semiconductor light emitting device by the MOOVD method using an adduct formed by the above manufacturing method will be shown below.

FIG. 2 is a schematic diagram of the MOOVD apparatus used in the present invention.

A graphite susceptor 7 coated with SiO is placed inside the horizontal reaction tube 6 made of quartz glass, and a substrate 8 is further placed on top of the graphite susceptor 7. The substrate is heated from the side of the reactor using a high frequency heating furnace, an infrared heating furnace, a resistance heating furnace 9, or the like. The substrate temperature is monitored by a thermocouple 10 embedded in a graphite susceptor 7. The reaction tube is connected to an exhaust system 11 and a waste gas treatment system 12 via valves 13,14. The adduct, which is a Zn source, is enclosed in a bubbler 15.

An organometallic compound containing a group Ⅰ element or an organic compound containing a halogen element, which serves as a source of n-type dopane F, is enclosed in a bubbler 16 . Carrier gas and hydrogen selenide (Hl Ss ) and hydrogen sulfide αη-1 (H2S) are filled in cylinders 17, 18, and 24, respectively. The flow rate of the carrier gas, hydrogen selenide, and hydrogen sulfide purified by the purification device 19 is controlled by the mass 70-controller 20. Bubbler 15.11S
The adduct and the -1 type dopant encapsulated in the thermostatic chamber 2
1, the temperature is maintained at a predetermined temperature. By introducing an appropriate amount of carrier gas into the bubbler and performing bubbling, desired amounts of the adduct and the adduct are supplied. The cylinder 25 is filled with gases such as chlorine, hydrogen chloride, hydrogen bromide, and hydrogen iodide, which are diluted with hydrogen gas, to serve as n-type donoints. The flow rate of Torhant gas is controlled by the mass 70-controller 20.

The adduct, hydrogen selenide, hydrogen sulfide, and dopant supplied in the above manner are diluted with a carrier gas and then merged into the reaction tube 6 through the three-way valve 22.
will be introduced to The three-way nozzle 22 is the reaction tube 6 for raw material gas.
The gas is introduced into the waste gas treatment system 12 and the waste gas is disposed of in the waste gas treatment system 12. In Figure 2, @ indicates the @ type reactor, but the basic configuration is the same for a vertical reactor. However, it is necessary to ensure the uniformity of the film obtained by providing a rotation mechanism for the substrate.

The epitaxial growth of ZnSySel -y (0≦y≦1) on the substrate is carried out as follows. The substrate, which has been subjected to cleaning and etching treatment, is set in a reactor. Thereafter, the inside of the reactor is evacuated to about 10'' Torr to remove any gas remaining in the system. After introducing the carrier gas and returning the inside of the system to normal pressure, temperature increase is started while flowing the carrier gas for about 1 to 217 m. Hydrogen or helium was used as the carrier gas. After the substrate temperature reaches the predetermined temperature and is stable, supply of raw material gas is started and ZnSy
Grow Sel-y. After growth for a predetermined period of time, the supply of raw materials is stopped and the system is cooled. During cooling, He
Alternatively, flow 1 to 2 L/m of H8. Add 50% hydrogen selenide or hydrogen sulfide to prevent thermal etching of the substrate surface.
The substrate may be cooled while flowing at a flow rate of about 60 d/win. Once the substrate returns to room temperature, the inside of the reactor is evacuated to remove hydrogen sulfide remaining in the system. After returning the pressure inside the system to atmospheric pressure, the substrate is taken out.

By performing crystal growth according to the steps described above using the MOOVD apparatus shown in FIG. 2, n-type znsys
An epitaxial film of high resistance Zn87Sel-y can be formed.

[Example 1] Production of semiconductor light emitting device having ZnF3ep-s junction (1oo) plane of 5-type gallium arsenide (GaAs), (1
A semiconductor light emitting device is manufactured on a plane having a deviation of 5° or 2° from the (00) plane to the (110) plane according to the following steps.

1. Formation of %-type Zn8e Substrate temperature = 200 to 550°C
Feed fi of 2% Hi Ss diluted with st/via Hl: 200II
j/m) Pumping gas flow of ethylaluminum (TEAt): 10~ at bubbler temperature -10℃
30d/wm Total gas flow rate including carrier gas; 4.5 L/
Swa growth time: Under conditions of 200 si or more, an approximately 5 μm thick Zn5e layer can be epitaxially grown on GaA3. The specific resistance of the film was [L5~10Ω・m] High resistance ZnBe
After the formation of the Zn5e layer, the supply of reaction gas to the reactor is interrupted by operating the three-way pulp 22. continue,
The supply of TEAt, which is a 5-type dopant, is discontinued. After the reaction gas is discarded for a while and the flow is stable, the three-way pulp 22 is operated again to introduce the reaction gas into the reactor. A high-resistance Zn5a layer is laminated on the Zn5e layer.

The growth conditions were as follows, except that no n-type dopant was provided.
%-type Zn8θ growth. Thickness 4000X
~5000X17) High resistance Zn5e layer is epitaxially grown. The specific resistance of the film was 101 to 104 Ω·m or more.

5. Formation of p-type ZnSθ Nitrogen (N), which is a p-type dopant, is added to the high-resistance Zn5e layer.
, phosphorus (P), silver (Af), etc. are introduced by ion implantation. The injection conditions are as follows.

Acceleration energy: 50 to 400 θV Implantation temperature: Room temperature Implant lid: 1014 to 1o16 ions/- The acceleration energy is adjusted so that the implanted dopant reaches the interface between the round-type ZnSθ and the high-resistance Zn8θ.

Subsequently, annealing is performed at 200 to 400° C. for 5 to 10 minutes in a hydrogen selenide atmosphere.

Through the above process, the high resistance Zn5e layer becomes P-type Zn
Change to 5e layer. The specific resistance of the membrane is approximately 100 to 200
It was an Ω saw.

4. Formation of ohmic contact An ohmic contact is formed under the following conditions.

After depositing Au-Go (Ge=12wt%) or Au-8n on a Ga11m substrate at about 2000X, 250~400X in an inert atmosphere
Heat treatment at 5 to 10 m at DEG C. Au, In, Zn, etc. are evaporated to a thickness of about 100X.

Mouth, apply conductive silver paste.

C. In-Ga and In-Ht were attached to the surface and heat treated at 300 to 400° C. for about 5 i in an inert atmosphere.

After cutting out the light emitting device having the P-temperature junction formed through the above steps into chips of approximately 200μ x 200μ, the leads are taken out from the P single layer side and the GaAs substrate side, and when a forward bias is applied, a blue Luminescence is obtained. The luminescence intensity increased with the current, and the luminance when 20 mA was applied was about 2 to 5 candelas.

A typical emission spectrum is shown in FIG. The peak wavelength of the emission spectrum is approximately 475 to 485 mm at room temperature.
The width at half maximum was approximately 10% of the groove thickness. In this example, in which the emitted light color was pure blue to the naked eye, the following effects were obtained.

1. The variations in the emission wavelength, emission threshold voltage, and current of light-emitting devices made from the same Univer were about 10% on average.

The variation in characteristics of light-emitting devices manufactured from wafers on which 7) s junctions were formed using different wafers or different batches was about 15 to 20%.

As described above, light emitting devices with little variation can be mass-produced in this embodiment. In this example, a light emitting device was fabricated on a wafer with a diameter of approximately 1 inch.
By changing the size and shape of the reactor, it is also possible to process a plurality of wafers with even larger diameters. Incidentally, the time required for the manufacturing process is approximately 8 hours for the ZnBe growth process and approximately 5 hours for the subsequent process. It is obvious that mass productivity is significantly improved compared to conventional techniques that handle bulk crystals in a closed system.

[Example 2] ZnSySel-y (0(y≦')) Non-manufacturing method of semiconductor light emitting device having pn junction - type gallium arsenide (GaAs), gallium phosphide (
Gap), silicon (Bib), germanium (Ge) (
100) plane, 5 in the direction from the (100) plane to the (110) plane
A semiconductor light emitting device is manufactured on a surface having a deviation of .degree. or 2" according to the following steps.

1. Formation of %-type Zn5ySal-y Substrate temperature: 200-550°C (OH3) Supply amount of diluted 2% Ho5e; 0-200 s
j/m ■, 2% H25lft diluted with) Supply amount; 0~200
sj/m Bubbling gas flow rate of triethylaluminum (TmAt); 10 to 50 d at bubble temperature -10°C
/ m Total gas flow rate including carrier gas: 4.5 t / m
m growth time; 200 m In order to change the solid phase composition ratio y of Zn5ySθt-y, it is sufficient to change the composition ratio of H2SO and HzS in the source gas. FIG. 4 shows the correlation between the gas composition and the solid phase composition ratio of Zn8ySθ1-y. Epitaxially grown ZnS
In order to improve the crystallinity of ySel-y, it is desirable to select a solid phase composition that has lattice matching with the substrate (Table 5).
The type of substrate and Zn5 that has lattice matching with the substrate used.
HffiSe, H2s for growing y8el-y
Shows the composition ratio.

Ge 0.64 GaAs a 70 GaP [L95 B1 [L97 Under the above conditions, approximately 5 μm of tow-type Zn5ySθ
A 1-y layer can be grown epitaxially. The specific resistance of the membrane is Q
, about 5 to 20 Ω·d.

2. Formation of high-resistance Zn8y8el-y After the formation of the Zn8ySel-7 layer is completed, the supply of reaction gas to the reactor is interrupted by operating the three-way pulp 22. Subsequently, the supply of TEhL, which is a PA-type dopant, is stopped.

After the reaction gas is discarded for a while and the flow rate becomes stable, the three-way valve 22 is operated again to introduce the reaction gas into the reactor. Zn8y8e on top of the attack type Zn8y8el-7 layer
Stack the ly layers. The growth conditions are the same as for the growth of agonistic znsyset-y, except that no agonistic dopant is provided. High resistance Zn with thickness 4000~5oooX
Form a 137EIel-y epitaxial layer. The specific resistance of the film was 10'' to 104 Ω·m or more.

5. Similarly to the formation of P-type ZnSySel-y [Example 1], P-type dopants N, P
, Af, etc. are introduced into the high-resistance ZnSySel-7 layer to change it to P-type. The ion implantation conditions and annealing conditions may be the same as in [Example 1], but the ion acceleration energy is such that the implanted dopant is of the exo-type ZH.
It is necessary to adjust it so that it reaches the interface between 8ySel-y and high resistance Zn8y8sl-y.

Through the above process, the high resistance Zn5ySθ1-y layer is made of P
- type ZnSySel-y layer. The specific resistance of the membrane was approximately 150 to 250Ω.

4. Formation of ohmic contact An ohmic contact is formed under the following conditions.

GaP substrate Au-81 (Si: 2%) or Au-Sn 2
After evaporation of about 000X, 500-600℃ in an inert atmosphere
, heat treatment 81 for 5 minutes, sputter or evaporate Ge substrate At or At-81 (Si = 2%) of about 50001, and heat it at 500°C 50°C in an inert atmosphere.
P-type Zn8yBθ plate y layer, Au, ■n, Zn, etc. are vapor-deposited to an extent of about 100X by heat treatment for a minute.

Mouth, apply conductive silver paste.

C. In--Ga and In--Ht were attached to the surface and heat treated at 500 to 400° C. for about 5 i in an inert atmosphere.

After cutting out the entire light emitting device having a p-n junction formed through the above steps into chips of approximately 200 μK x 200 μm, the leads are taken out from the P single layer side and the GaAs substrate side, and when a forward bias is applied, blue light is emitted. is obtained. The luminescence intensity increased with the current, and the luminance when 25 mA was applied was about 2 to 265 millicandela.

The peak wavelength of the emission spectrum changed depending on the composition of Zn5ySθ1-7, and shifted to the shorter wavelength side as y increased. The same effect as in Example 1 was also obtained in this example in which the half-width was about 10%S.

[Actually, Example 3] (1 Labor 1.<)):, r Ding In Example 1.2, TE
Although At was used, Zn5ySax-
In the same way as the addition of At to y, the addition of Ga and In is also
Corresponding organometallic compounds, e.g. triethylgallium (
boiling point = 145°C), triethyl indium (boiling point = 18
4°C). In addition, n-type dopants include chlorine, hydrogen chloride, hydrogen bromide, hydrogen iodide, and organic compounds containing halogen elements, such as
．． It is possible to use 4-dichlorobutane propyl bromide, EF methylene difluoride, etc., and it is possible to form an exo-type Zn8ySθ1-y in which a halogen element is used as a donor in the above-mentioned example.

The light emitting device manufactured using the above-described dopant exhibited characteristics similar to those obtained in Example 1 or 2 when the doping amount was comparable to that of Examples 1 and 2.

Furthermore, regarding the adduct as a zinc source, Example 1
．． (OHa)2Zn-Be(OHs)x used in 2
In addition, the five types of adducts listed in Table 2 can also be used. The feed rate of the adduct can be given by the bubbling conditions in Example 1.2 zzn-sθ(OH
3) When the supply amount is the same as 2, Zn5e and ZnSyS
The growth rate of e1-y was the same, and the characteristics of the obtained light-emitting devices were also at the same level.

Besides this, it can be easily inferred as follows (, ZnSθ.

It is also possible to manufacture a light emitting device using a pn junction formed by using ZnS as a growth substrate and forming a layer of ZnSySel-y (0≦y≦1) thereon according to the above-described process.

〔Effect of the invention〕

As explained above, according to the present invention, the cylindrical ZnSySe
l-7 (0≦y≦1) and P-type Zn5yE]el-y(
In a method for manufacturing a semiconductor light emitting device that emits blue light using a p-n junction formed by 0≦y≦1), dialkylzinc and dialkylselenium are mixed in an approximately excessive amount of the lower boiling point component of both, and then heated. After reaction and aging, excess components are removed by distillation, and an organic zinc compound, which is an adduct of dialkylzinc and dialkylselenium, is used as the zinc source.
0VD method) to form a low-resistance ZnSySel-y layer, a MOOVD method to form a non-doped high-resistance Z,n5ySel-y layer, and a P-type dopant to the high-resistance Zn8y8ex-7 layer. Introduced by ion implantation method, low resistance P-type Zn8ySθ1-y
By creating a pn junction through the process of forming layers, it has become possible to stably mass-produce semiconductor devices that emit blue light. We believe that the present invention will greatly contribute to the manufacture of semiconductor devices that emit blue light and to the spread of various devices using them.

[Brief explanation of drawings]

Figure 1 shows the vapor pressure-temperature characteristics of (OH3)2Zn-Be(OHM)2 1... Temperature 2... Vapor pressure 6...
... Adduct 4 ''=Be(OHII)2 5=-Z
n(OHrig) Figure 2 shows the MOOVD used in the present invention.
Schematic diagram of the apparatus 6... Reaction tube made of quartz glass 7... Graphite susceptor coated with SiO 8... Substrate 9...
High frequency heating furnace or infrared heating furnace or resistance heating furnace 10...
... Thermocouple 11 ... Exhaust system 12 ...
...Waste gas treatment system 15.14...Pulp 15
...Bubbler containing adduct 16...
・Bubbler containing deceptive dopant 17...
・Cylinder containing carrier gas 18...Cylinder containing selenium hydrogen 19...Gas purification device f
li 20...Mass 70 controller 21
・・・・・・Thermostat 22 ・・・Three-way pulp 2
5...Pulp 24...Cylinder containing hydrogen sulfide 25...Cylinder containing 5-type dopant gas Figure 3 was produced by the manufacturing method according to the present invention. The emission spectrum of the semiconductor light emitting device shown in FIG. 4 is a correlation diagram between the gas composition and the obtained crystal composition when forming the ZnSySel-y layer. 1t-shi32f a\t4・ill ” 'F4 rod 1l-u, L%a sr
<y)-1(,/Fig. 3

Claims (2)

[Claims] (1) n-type ZnS_ySe_1_-_y (0≦y≦1
) and P-type ZnS_ySe_1_-_y (0≦y≦1)
In the manufacturing method of a semiconductor light-emitting device that emits blue light using a p-n junction formed by the method, dialkylzinc and dialkylselenium are mixed in an approximately excessive amount of the low boiling point component of both, and the reaction and aging are performed by heating. After that, low-resistance n-type ZnS_ySe_1_ is produced by metal organic vapor phase pyrolysis (MOCVD method) using an organic zinc compound, which is an adduct of dialkylzinc and dialkylselenium, as a zinc source by distilling off excess components. - a step of forming a non-doped high-resistance ZnS_ySe_1_-_y layer by the MOOVD method; a step of introducing a p-type dopant into the high-resistance ZnS_ySe_1_-_y layer by an ion implantation method to form a low-resistance p-type dopant; -type ZnS_y
A method for manufacturing a semiconductor light emitting device, characterized in that a pn junction is formed by a step of forming a Se_1_-_y layer. (2) The organometallic compound used as the zinc source is at 0°C.
It is an adduct formed from dialkylzinc and dialkylselenium by a heat treatment including a heating reaction step at ~40°C for 10-180 minutes, and a step of gradually increasing the temperature and aging at 30-80°C for 10-120 minutes. A method for manufacturing a semiconductor light emitting device according to claim 1, characterized in that: