JPS55107265A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS55107265A
JPS55107265A JP1082080A JP1082080A JPS55107265A JP S55107265 A JPS55107265 A JP S55107265A JP 1082080 A JP1082080 A JP 1082080A JP 1082080 A JP1082080 A JP 1082080A JP S55107265 A JPS55107265 A JP S55107265A
Authority
JP
Japan
Prior art keywords
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1082080A
Other languages
English (en)
Inventor
Kurause Yurugen
Chihanii Iene
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS55107265A publication Critical patent/JPS55107265A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H01L29/66371—Thyristors structurally associated with another device, e.g. built-in diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thyristors (AREA)
JP1082080A 1979-02-06 1980-01-31 Thyristor Pending JPS55107265A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2904424A DE2904424C2 (de) 1979-02-06 1979-02-06 Thyristor mit Steuerung durch Feldeffekttransistor

Publications (1)

Publication Number Publication Date
JPS55107265A true JPS55107265A (en) 1980-08-16

Family

ID=6062271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1082080A Pending JPS55107265A (en) 1979-02-06 1980-01-31 Thyristor

Country Status (3)

Country Link
EP (1) EP0014435B1 (ja)
JP (1) JPS55107265A (ja)
DE (1) DE2904424C2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58151061A (ja) * 1982-02-03 1983-09-08 ゼネラル・エレクトリツク・カンパニイ タ−ンオン及びタ−ンオフできる半導体装置
JPS58197771A (ja) * 1982-04-05 1983-11-17 ゼネラル・エレクトリツク・カンパニイ 通電能力を改善した絶縁ゲ−ト整流器

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364073A (en) * 1980-03-25 1982-12-14 Rca Corporation Power MOSFET with an anode region
DE3024015A1 (de) * 1980-06-26 1982-01-07 Siemens AG, 1000 Berlin und 8000 München Steuerbarer halbleiterschalter
FR2488046A1 (fr) * 1980-07-31 1982-02-05 Silicium Semiconducteur Ssc Dispositif de puissance a commande par transistor dmos
DE3041035A1 (de) * 1980-10-31 1982-06-09 Wolfgang Dipl.-Ing. 1000 Berlin Krautschneider Durch feldeffekt aus- und einschaltbare halbleitervierschichtstruktur
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
DE3226624A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit
DE3482354D1 (de) * 1983-02-04 1990-06-28 Gen Electric Elektrische schaltung eine hybride leistungsschalthalbleiteranordnung mit scr-struktur enthaltend.
JPS60196974A (ja) * 1984-03-19 1985-10-05 Toshiba Corp 導電変調型ｍｏｓｆｅｔ
DE3689680T2 (de) * 1985-09-30 1994-06-23 Toshiba Kawasaki Kk Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren.
JPH0575110A (ja) * 1991-09-13 1993-03-26 Fuji Electric Co Ltd 半導体装置
DE102004009087B4 (de) * 2004-02-25 2009-04-02 Infineon Technologies Ag Verfahren zum Einstellen der Durchbruchspannung eines Thyristors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4947715A (ja) * 1972-09-13 1974-05-09

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (ja) * 1962-06-11
DE1589681A1 (de) * 1967-03-07 1970-04-30 Philips Patentverwaltung Elektronischer Koppelpunkt
JPS5125116B1 (ja) * 1970-10-08 1976-07-28
JPS493583A (ja) * 1972-04-20 1974-01-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4947715A (ja) * 1972-09-13 1974-05-09

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58151061A (ja) * 1982-02-03 1983-09-08 ゼネラル・エレクトリツク・カンパニイ タ−ンオン及びタ−ンオフできる半導体装置
JPH045274B2 (ja) * 1982-02-03 1992-01-30
JPS58197771A (ja) * 1982-04-05 1983-11-17 ゼネラル・エレクトリツク・カンパニイ 通電能力を改善した絶縁ゲ−ト整流器
JPH041510B2 (ja) * 1982-04-05 1992-01-13 Gen Electric

Also Published As

Publication number Publication date
DE2904424A1 (de) 1980-08-07
EP0014435A1 (de) 1980-08-20
EP0014435B1 (de) 1983-02-16
DE2904424C2 (de) 1982-09-02

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