JPS55105000A - Production of silicon carbide crystal layer - Google Patents

Production of silicon carbide crystal layer

Info

Publication number
JPS55105000A
JPS55105000A JP1020179A JP1020179A JPS55105000A JP S55105000 A JPS55105000 A JP S55105000A JP 1020179 A JP1020179 A JP 1020179A JP 1020179 A JP1020179 A JP 1020179A JP S55105000 A JPS55105000 A JP S55105000A
Authority
JP
Japan
Prior art keywords
layer
sic
substrate
temp
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1020179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6152119B2 (enrdf_load_stackoverflow
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1020179A priority Critical patent/JPS55105000A/ja
Publication of JPS55105000A publication Critical patent/JPS55105000A/ja
Publication of JPS6152119B2 publication Critical patent/JPS6152119B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP1020179A 1979-01-29 1979-01-29 Production of silicon carbide crystal layer Granted JPS55105000A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1020179A JPS55105000A (en) 1979-01-29 1979-01-29 Production of silicon carbide crystal layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1020179A JPS55105000A (en) 1979-01-29 1979-01-29 Production of silicon carbide crystal layer

Publications (2)

Publication Number Publication Date
JPS55105000A true JPS55105000A (en) 1980-08-11
JPS6152119B2 JPS6152119B2 (enrdf_load_stackoverflow) 1986-11-12

Family

ID=11743649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1020179A Granted JPS55105000A (en) 1979-01-29 1979-01-29 Production of silicon carbide crystal layer

Country Status (1)

Country Link
JP (1) JPS55105000A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162035A (ja) * 1982-03-23 1983-09-26 Hoxan Corp 多結晶シリコンウエハの製造方法
JPS62216325A (ja) * 1986-03-18 1987-09-22 Fujitsu Ltd Ｘ線マスクの製造方法
US5471946A (en) * 1992-10-13 1995-12-05 Cs Halbleiter-Und Solartechnologie Gmbh Method for producing a wafer with a monocrystalline silicon carbide layer
FR2833619A1 (fr) * 2001-12-17 2003-06-20 Commissariat Energie Atomique Procede de fabrication de substrats semi-conducteurs cristallins

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162035A (ja) * 1982-03-23 1983-09-26 Hoxan Corp 多結晶シリコンウエハの製造方法
JPS62216325A (ja) * 1986-03-18 1987-09-22 Fujitsu Ltd Ｘ線マスクの製造方法
US5471946A (en) * 1992-10-13 1995-12-05 Cs Halbleiter-Und Solartechnologie Gmbh Method for producing a wafer with a monocrystalline silicon carbide layer
FR2833619A1 (fr) * 2001-12-17 2003-06-20 Commissariat Energie Atomique Procede de fabrication de substrats semi-conducteurs cristallins
WO2003052176A3 (fr) * 2001-12-17 2004-02-12 Commissariat Energie Atomique Procede de fabrication de substrats semi-conducteurs cristallins.

Also Published As

Publication number Publication date
JPS6152119B2 (enrdf_load_stackoverflow) 1986-11-12

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