JPS55102269A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS55102269A JPS55102269A JP820179A JP820179A JPS55102269A JP S55102269 A JPS55102269 A JP S55102269A JP 820179 A JP820179 A JP 820179A JP 820179 A JP820179 A JP 820179A JP S55102269 A JPS55102269 A JP S55102269A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- substrate
- type
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP820179A JPS55102269A (en) | 1979-01-29 | 1979-01-29 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP820179A JPS55102269A (en) | 1979-01-29 | 1979-01-29 | Method of fabricating semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55102269A true JPS55102269A (en) | 1980-08-05 |
| JPH0212012B2 JPH0212012B2 (enExample) | 1990-03-16 |
Family
ID=11686641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP820179A Granted JPS55102269A (en) | 1979-01-29 | 1979-01-29 | Method of fabricating semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55102269A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01123474A (ja) * | 1987-11-09 | 1989-05-16 | Nec Corp | 絶縁ゲート型半導体装置 |
| JPH01128569A (ja) * | 1987-11-13 | 1989-05-22 | Nec Corp | 電界効果トランジスタ |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS508484A (enExample) * | 1973-05-21 | 1975-01-28 | ||
| JPS52107777A (en) * | 1976-03-08 | 1977-09-09 | Nippon Telegr & Teleph Corp <Ntt> | Production of semiconductor unit |
-
1979
- 1979-01-29 JP JP820179A patent/JPS55102269A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS508484A (enExample) * | 1973-05-21 | 1975-01-28 | ||
| JPS52107777A (en) * | 1976-03-08 | 1977-09-09 | Nippon Telegr & Teleph Corp <Ntt> | Production of semiconductor unit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01123474A (ja) * | 1987-11-09 | 1989-05-16 | Nec Corp | 絶縁ゲート型半導体装置 |
| JPH01128569A (ja) * | 1987-11-13 | 1989-05-22 | Nec Corp | 電界効果トランジスタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0212012B2 (enExample) | 1990-03-16 |
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