JPS55100299A - Production of silicon carbide crystal layer - Google Patents
Production of silicon carbide crystal layerInfo
- Publication number
- JPS55100299A JPS55100299A JP783479A JP783479A JPS55100299A JP S55100299 A JPS55100299 A JP S55100299A JP 783479 A JP783479 A JP 783479A JP 783479 A JP783479 A JP 783479A JP S55100299 A JPS55100299 A JP S55100299A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sic layer
- substrate
- crystal layer
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 229910002804 graphite Inorganic materials 0.000 abstract 2
- 239000010439 graphite Substances 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 238000005234 chemical deposition Methods 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP783479A JPS55100299A (en) | 1979-01-25 | 1979-01-25 | Production of silicon carbide crystal layer |
| DE3002671A DE3002671C2 (de) | 1979-01-25 | 1980-01-25 | Verfahren zur Herstellung eines Siliciumcarbidsubstrats |
| US06/369,911 US4582561A (en) | 1979-01-25 | 1982-04-19 | Method for making a silicon carbide substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP783479A JPS55100299A (en) | 1979-01-25 | 1979-01-25 | Production of silicon carbide crystal layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55100299A true JPS55100299A (en) | 1980-07-31 |
| JPS623117B2 JPS623117B2 (enrdf_load_stackoverflow) | 1987-01-23 |
Family
ID=11676625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP783479A Granted JPS55100299A (en) | 1979-01-25 | 1979-01-25 | Production of silicon carbide crystal layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55100299A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60136134U (ja) * | 1984-02-17 | 1985-09-10 | 三洋電機株式会社 | 単結晶成長装置 |
-
1979
- 1979-01-25 JP JP783479A patent/JPS55100299A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60136134U (ja) * | 1984-02-17 | 1985-09-10 | 三洋電機株式会社 | 単結晶成長装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS623117B2 (enrdf_load_stackoverflow) | 1987-01-23 |
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