JPS5492598A - Production of cdse film - Google Patents

Production of cdse film

Info

Publication number
JPS5492598A
JPS5492598A JP15842577A JP15842577A JPS5492598A JP S5492598 A JPS5492598 A JP S5492598A JP 15842577 A JP15842577 A JP 15842577A JP 15842577 A JP15842577 A JP 15842577A JP S5492598 A JPS5492598 A JP S5492598A
Authority
JP
Japan
Prior art keywords
cdse
vacuum
depositing
angstrom
evaporation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15842577A
Other languages
Japanese (ja)
Other versions
JPS565682B2 (en
Inventor
Nobuyoshi Takagi
Fumiaki Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15842577A priority Critical patent/JPS5492598A/en
Publication of JPS5492598A publication Critical patent/JPS5492598A/en
Publication of JPS565682B2 publication Critical patent/JPS565682B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

PURPOSE:To produce the title film with a rapidly responding property and a small dark current without being affected by the atmospheric gas, by simultaneously evaporating CdSe and Te from different sources and vacuum depositing them on the surface of an unheated substrate placed in a vacuum at below each specific depositing rate. CONSTITUTION:Vacuum vessel 1 is evacuated to about 10<-5> Torr with a vacuum pump through exhaust pipe 8. CdSe evaporation source 4 and Te evaporation source 5 are heated with heaters 6,7, respectively to attain each predetermined depositing rate, and CdSe and Te are vacuum deposited on the surface of alumina substrate 3 of ordinary temp. held by holder 2. By controlling the depositing rate of CdSe to below 10 Angstrom /see, responding characteristics are improved, and that of Te is controlled to 1 Angstrom /sec to bond Se vacant positions. The ratio of the depositing rates is pref. about 10:1. Heat treatment after the deposition is carried out in N2 gas of 650-700 deg.C for a predetermined time as usual.
JP15842577A 1977-12-30 1977-12-30 Production of cdse film Granted JPS5492598A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15842577A JPS5492598A (en) 1977-12-30 1977-12-30 Production of cdse film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15842577A JPS5492598A (en) 1977-12-30 1977-12-30 Production of cdse film

Publications (2)

Publication Number Publication Date
JPS5492598A true JPS5492598A (en) 1979-07-21
JPS565682B2 JPS565682B2 (en) 1981-02-06

Family

ID=15671469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15842577A Granted JPS5492598A (en) 1977-12-30 1977-12-30 Production of cdse film

Country Status (1)

Country Link
JP (1) JPS5492598A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102070129A (en) * 2011-01-18 2011-05-25 浙江理工大学 Method for preparing cadmium selenide nanometer wire
CN108203843A (en) * 2017-12-11 2018-06-26 昆明理工大学 A kind of cadmium selenide thin film vapour phase epitaxy preparation system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102070129A (en) * 2011-01-18 2011-05-25 浙江理工大学 Method for preparing cadmium selenide nanometer wire
CN108203843A (en) * 2017-12-11 2018-06-26 昆明理工大学 A kind of cadmium selenide thin film vapour phase epitaxy preparation system
CN108203843B (en) * 2017-12-11 2020-05-15 昆明理工大学 Cadmium selenide film vapor phase epitaxy preparation system

Also Published As

Publication number Publication date
JPS565682B2 (en) 1981-02-06

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