CN108203843B - Cadmium selenide film vapor phase epitaxy preparation system - Google Patents
Cadmium selenide film vapor phase epitaxy preparation system Download PDFInfo
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- CN108203843B CN108203843B CN201711306122.3A CN201711306122A CN108203843B CN 108203843 B CN108203843 B CN 108203843B CN 201711306122 A CN201711306122 A CN 201711306122A CN 108203843 B CN108203843 B CN 108203843B
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
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Abstract
The invention relates to a cadmium selenide film vapor phase epitaxy preparation system, and belongs to the technical field of semiconductor manufacturing. The preparation system comprises a displacement system, a temperature control system, an epitaxial system, an operation box, a fixed table and a target storage box, wherein the fixed table is fixedly arranged at the top end of the target storage box, the operation box is arranged on the fixed table, the displacement system is arranged on a support frame, the temperature control system is fixedly arranged at the top end of the displacement system, the epitaxial system is horizontally arranged, one end of the epitaxial system is communicated with the operation box, and the other end of the epitaxial system extends to the temperature control system and can be inserted into the temperature control system. The epitaxial tube is provided with the flow-limiting flow-gathering cover which circulates after the source is evaporated and the supporting devices of the source and the growth substrate, and the flow-limiting flow-gathering cover and the supporting devices are respectively utilized to improve the utilization rate of the source and the high-efficiency deposition of the thin film material.
Description
Technical Field
The invention relates to a cadmium selenide film vapor phase epitaxy preparation system, and belongs to the field of semiconductor manufacturing.
Background
Cadmium selenide (CdSe) is a typical ii-vi compound semiconductor material and has received much attention because of its superior optoelectronic properties. Cadmium selenide (CdSe) has a wider and direct band gap, and thus has enjoyed great success in solar cells, electroluminescent devices, micro-light modulators, y-ray detectors, and the like. Different CdSe materials prepared by different methods and devices have good application prospects.
Improving the preparation quality of the CdSe film is the basis for preparing optoelectronic devices with excellent performance. The CdSe films prepared by different devices and processes have different crystallization properties, and the photoelectric characteristics and related applications of the CdSe films are influenced by the difference of the film quality. Currently, main apparatuses for preparing CdSe are a vacuum evaporation apparatus, a spray pyrolysis apparatus, a Molecular Beam Epitaxy (MBE) apparatus, a chemical bath deposition apparatus, a chemical vapor deposition apparatus, and the like. However, the prior preparation device has the following problems: (1) the equipment is expensive and the cost is too high; (2) the procedure is complex and the operation is complicated; (3) the film deposition is not uniform, and the crystallization quality is not good; (4) the utilization rate of the material is low.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a cadmium selenide film vapor phase epitaxy preparation system, which adopts a heating furnace to control different temperature areas, and has simple operation and accurate control; a direction-limiting flow-gathering cover is arranged in the vacuum chamber, so that the utilization rate of the source and the film deposition rate are improved.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a cadmium selenide film vapor phase epitaxy preparation system comprises a displacement system, a temperature control system, an epitaxy system, an operation box 32, a fixed table 34 and a target storage box 35, wherein the fixed table 34 is fixedly arranged at the top end of the target storage box 35, the operation box 32 is arranged on the fixed table 34, the displacement system is arranged on a support frame 19, the temperature control system is fixedly arranged at the top end of the displacement system, the epitaxy system is horizontally arranged, one end of the epitaxy system is communicated with the operation box 32, and the other end of the epitaxy system extends towards the temperature control system and can be inserted into the temperature control system;
the displacement system comprises a support plate 16, a displacement vehicle 17, a temperature control slide rail 18 and a power supply slide rail 20, wherein the temperature control slide rail 18 is arranged at the top end of a support frame 19, wheels are arranged at the bottom end of the displacement vehicle 17, the wheels are arranged on the temperature control slide rail 18 and are matched with the temperature control slide rail 18, the support plate 16 is vertically arranged at two sides of the top end of the displacement vehicle 17, the temperature control system is fixedly arranged above the displacement vehicle 17 through the support plate 16, and the power supply slide rail 20 is arranged on the ground and is positioned below the temperature control;
the temperature control system comprises a furnace tube 1, a high-temperature zone furnace wire 2, a medium-temperature zone furnace wire 3, a low-temperature zone furnace wire 4, a high-medium temperature zone heat insulation ring belt 5, a medium-low temperature zone heat insulation ring belt 38, a high-temperature zone thermocouple 6, a medium-temperature zone thermocouple 37, a low-temperature zone thermocouple 39, a high-temperature zone digital display 7, a medium-temperature zone digital display 36, a low-temperature zone digital display 8, a data acquisition device, a processor 9, a touch display, a heat insulation taper tube 10, a temperature control lead 11, a multi-frequency transformer box 12, a high-voltage wire 13, a wire rotating disc 14 and a sliding power supply 15, wherein the furnace tube 1 is fixedly arranged on a displacement vehicle 17 through a supporting plate 16, the high-medium-temperature zone heat insulation ring belt 5 and the medium-low temperature zone heat insulation ring belt 38 are vertically arranged on the furnace tube 1 and divide the furnace tube 1 into a high-temperature zone, a furnace tube medium, the medium-temperature zone furnace wire 3 is arranged on the inner wall of a furnace tube 1 of a medium-temperature zone of the furnace tube, the low-temperature zone furnace wire 4 is arranged on the inner wall of the furnace tube 1 of a low-temperature zone of the furnace tube, the high-temperature zone thermocouples 6 are uniformly arranged on the top wall of the furnace tube 1 of a high-temperature zone of the furnace tube, probes of the high-temperature zone thermocouples 6 penetrate through the top wall of the furnace tube 1 and extend into the furnace tube 1, the medium-temperature zone thermocouples 37 are uniformly arranged on the top wall of the furnace tube 1 of the medium-temperature zone of the furnace tube, probes of the medium-temperature zone thermocouples 37 penetrate through the top wall of the furnace tube 1 and extend into the furnace tube 1, the low-temperature zone thermocouples 39 are uniformly arranged on the top wall of the furnace tube 1 of the low-temperature zone of the furnace tube and extend into the furnace tube 1, the high-temperature zone digitizer 7 is arranged on the top end of the furnace tube 1 of the, the high-temperature zone thermocouple 6 is respectively connected with the data collector and the high-temperature zone digital display 7 through data lines, the medium-temperature zone thermocouple 37 is respectively connected with the data collector and the medium-temperature zone digital display 36 through data lines, the low-temperature zone thermocouple 39 is respectively connected with the data collector and the low-temperature zone digital display 8 through data lines, the processor 9 is arranged in the middle of the top end of the furnace tube 1, the data collector is connected with the processor 9, the touch display is fixedly arranged at the front end of the processor 9 and is connected with the processor 9, the heat insulation taper tube 10 is fixedly arranged at one side of the low-temperature zone of the furnace tube and is communicated with the low-temperature zone of the furnace tube, the multi-frequency transformer box 12 is arranged at the top end of the displacement vehicle 17 and is positioned below the furnace tube 1, the multi-frequency transformer box 12 is respectively connected with the high-temperature zone furnace wire 2, the medium-temperature zone furnace wire 3 and the low-temperature zone furnace, the bottom of the power box is provided with wheels, the wheels are arranged on the power supply slide rail 20 and matched with the power supply slide rail 20, wire rotating disc racks are vertically arranged on two sides of the top end of the power box, the wire rotating discs 14 are arranged at the top ends of the wire rotating disc racks through rotating shafts and can rotate on the wire rotating disc racks 14, the high-voltage wires 13 are wound on the wire rotating discs 14, and the sliding power supply 15 is connected with the multi-frequency transformer box 12 through the high-voltage wires 13;
the epitaxial system comprises an epitaxial tube 21, a source concave station 22, more than 3 direction-limiting flow-gathering covers 23, a target station 24, a box-placing boat 25, an epitaxial thin film box 26, an airflow three-way pipe 27, a sealing cover 28, a vacuum tube 29, a vacuum pump machine 30 and a damping station 31, wherein one end of the airflow three-way pipe 27 in the horizontal direction penetrates through the side wall of an operation box 32 and is communicated with the inside of the operation box 32, the other end of the airflow three-way pipe 27 in the horizontal direction is communicated with one end of the epitaxial tube 21, one end of the airflow three-way pipe 27 in the vertical direction penetrates through a fixing station 34 and is communicated with the top end of the vacuum tube 29, the bottom end of the vacuum tube 29 is connected with the vacuum pump machine 30, the vacuum pump machine 30 is; one end of the airflow three-way pipe 27 in the horizontal direction is provided with a sealing cover 28, and the sealing cover 28 is positioned in the operation box 32; the other end of the epitaxial tube 21 extends towards the furnace tube 1 and can penetrate through the heat insulation taper tube 10 to be inserted into the furnace tube 1, the source concave station 22 is arranged in the epitaxial tube 21 at one side close to the furnace tube 1, the concave surface of the source concave station is arranged upwards, the direction-limiting flow-gathering cover 23 is uniformly arranged in the middle of the epitaxial tube 21, the target station 24 is arranged in the epitaxial tube 21 at one side close to the operation box 32, the box placing boat 25 is arranged at the top end of the target station 24, the epitaxial film box 26 is arranged on the box placing boat 25, the side wall of the epitaxial film box 26 is provided with an openable cover, the openable cover is arranged at the end, close to the source concave station 22, of the epitaxial film box 26, and the openable cover is uniformly provided with a plurality of airflow;
further, the side wall of the operation box 32 is provided with a sealing box cover 33;
furthermore, the processor 9 is an intel microprocessor, and the touch display is a resistive touch display;
furthermore, the furnace tube 1 comprises a heat-preservation and heat-insulation outer layer and a high-temperature-resistant corundum inner layer, and the end of the far extension tube 21 of the furnace tube 1 is closed;
furthermore, the high-temperature zone furnace wire 2, the medium-temperature zone furnace wire 3 and the low-temperature zone furnace wire 4 are all spiral nickel-chromium alloy furnace wires, and the screw pitches of the high-temperature zone furnace wire 2, the medium-temperature zone furnace wire 3 and the low-temperature zone furnace wire 4 are sequentially increased;
furthermore, the high and medium temperature zone heat insulation ring belt 5 and the medium and low temperature zone heat insulation ring belt 38 are both heat insulation ceramic fiber ring belts, and the heat insulation taper pipe 10 is a heat insulation ceramic fiber taper pipe with a taper opening;
furthermore, the extension tube 21 and the direction-limiting flow-gathering cover 23 are both quartz tubes, and the direction-limiting flow-gathering cover 23 is an open curved cover;
the invention has the beneficial effects that:
(1) the cadmium selenide film vapor phase epitaxy preparation system is low in cost and simple to operate;
(2) the cadmium selenide film vapor phase epitaxy preparation system obtains a uniform deposition film with good crystallization quality through the temperature control system, the displacement system and the epitaxy system;
(3) the cadmium selenide film vapor phase epitaxy preparation system improves the utilization rate of the source through the temperature gradient of the epitaxy wall and the direction-limiting flow-gathering cover in the vacuum cavity.
Drawings
Fig. 1 is a schematic perspective view of a vapor phase epitaxy preparation system of a cadmium selenide thin film according to example 1;
FIG. 2 is a schematic view of the structure of a vapor phase epitaxy preparation system of a cadmium selenide thin film according to embodiment 1;
FIG. 3 is a schematic view of an assembly structure of a temperature control system and a temperature control skid of the cadmium selenide thin film vapor phase epitaxy preparation system of embodiment 1;
fig. 4 is a partial sectional view (side view) of an assembly structure of a temperature control system and a temperature control skid of the cadmium selenide thin film vapor phase epitaxy preparation system of embodiment 1;
fig. 5 is a partial sectional view (front view) of an assembly structure of a temperature control system and a temperature control skid of the cadmium selenide thin film vapor phase epitaxy preparation system of embodiment 1;
FIG. 6 is a schematic structural view of a displacement system according to embodiment 1;
FIG. 7 is a schematic view of an assembly structure of an airflow three-way pipe, an operation box and a vacuum pump in the embodiment 1;
FIG. 8 is a schematic view showing an assembled structure of an epitaxial tube, a source recess, a direction-limiting current-collecting cap, and an epitaxial thin film cassette according to example 1;
FIG. 9 is a schematic view showing the structure of an epitaxial thin film cassette according to example 1;
FIG. 10 is a schematic structural view of an operation box in accordance with embodiment 1;
wherein, 1-furnace tube, 2-high temperature zone furnace wire, 3-medium temperature zone furnace wire, 4-low temperature zone furnace wire, 5-high and medium temperature zone heat insulation ring belt, 6-thermocouple probe, 7-high temperature zone digital display, 8-low temperature zone digital display, 9-temperature trend controller, 10-heat insulation taper pipe, 11-temperature control lead, 12-multi-frequency transformer box, 13-high voltage wire, 14-wire turntable, 15-sliding power supply, 16-support plate, 17-temperature control displacement vehicle, 18-temperature control slide rail, 19-support rod, 20-power supply slide rail, 21-extension pipe, 22-source concave table, 23-direction-limiting flow-gathering cover, 24-target table, 25-box-placing boat, 26-extension film box, 27-airflow three-way pipe, 28-sealing cover, 29-a plurality of sections of vacuum tubes, 30-a vacuum pump, 31-a damping table, 32-an operation box, 33-a sealing box cover, 34-a fixed table, 35-a target storage box, 36-a middle temperature area digital display, 37-a middle temperature area thermocouple, 38-a middle and low temperature area heat insulation ring belt and 39-a low temperature area thermocouple.
Detailed Description
The present invention will be further described with reference to the following embodiments.
Example 1: as shown in fig. 1 to 10, a cadmium selenide thin film vapor phase epitaxy preparation system is characterized in that: the device comprises a displacement system, a temperature control system, an epitaxial system, an operation box 32, a fixed table 34 and a target storage box 35, wherein the fixed table 34 is fixedly arranged at the top end of the target storage box 35, the operation box 32 is arranged on the fixed table 34, the displacement system is arranged on a support frame 19, the temperature control system is fixedly arranged at the top end of the displacement system, the epitaxial system is horizontally arranged, one end of the epitaxial system is communicated with the operation box 32, and the other end of the epitaxial system extends towards the temperature control system and can be inserted into the temperature control system;
the displacement system comprises a support plate 16, a displacement vehicle 17, a temperature control slide rail 18 and a power supply slide rail 20, wherein the temperature control slide rail 18 is arranged at the top end of a support frame 19, wheels are arranged at the bottom end of the displacement vehicle 17, the wheels are arranged on the temperature control slide rail 18 and are matched with the temperature control slide rail 18, the support plate 16 is vertically arranged at two sides of the top end of the displacement vehicle 17, the temperature control system is fixedly arranged above the displacement vehicle 17 through the support plate 16, and the power supply slide rail 20 is arranged on the ground and is positioned below the temperature control;
the temperature control system comprises a furnace tube 1, a high-temperature zone furnace wire 2, a medium-temperature zone furnace wire 3, a low-temperature zone furnace wire 4, a high-medium-temperature heat insulation ring belt 5, a medium-low-temperature zone heat insulation ring belt 38, a high-temperature zone thermocouple 6, a medium-temperature zone thermocouple 37, a low-temperature zone thermocouple 39, a high-temperature zone digital display 7, a medium-temperature zone digital display 36, a low-temperature zone digital display 8, a data acquisition device, a processor 9, a touch display, a heat insulation taper tube 10, a temperature control lead 11, a multi-frequency transformer box 12, a high-voltage wire 13, a wire rotating disc 14 and a sliding power supply 15, wherein the furnace tube 1 is fixedly arranged on a displacement vehicle 17 through a supporting plate 16, the high-medium-temperature zone heat insulation ring belt 5 and the medium-low-temperature zone heat insulation ring belt 38 are vertically arranged on the furnace tube 1 and divide the furnace tube 1 into a high-temperature zone, a furnace, the medium-temperature zone furnace wire 3 is arranged on the inner wall of a furnace tube 1 of a medium-temperature zone of the furnace tube, the low-temperature zone furnace wire 4 is arranged on the inner wall of the furnace tube 1 of a low-temperature zone of the furnace tube, the high-temperature zone thermocouples 6 are uniformly arranged on the top wall of the furnace tube 1 of a high-temperature zone of the furnace tube, probes of the high-temperature zone thermocouples 6 penetrate through the top wall of the furnace tube 1 and extend into the furnace tube 1, the medium-temperature zone thermocouples 37 are uniformly arranged on the top wall of the furnace tube 1 of the medium-temperature zone of the furnace tube, probes of the medium-temperature zone thermocouples 37 penetrate through the top wall of the furnace tube 1 and extend into the furnace tube 1, the low-temperature zone thermocouples 39 are uniformly arranged on the top wall of the furnace tube 1 of the low-temperature zone of the furnace tube and extend into the furnace tube 1, the high-temperature zone digitizer 7 is arranged on the top end of the furnace tube 1 of the, the high-temperature zone thermocouple 6 is respectively connected with the data collector and the high-temperature zone digital display 7 through data lines, the medium-temperature zone thermocouple 37 is respectively connected with the data collector and the medium-temperature zone digital display 36 through data lines, the low-temperature zone thermocouple 39 is respectively connected with the data collector and the low-temperature zone digital display 8 through data lines, the processor 9 is arranged in the middle of the top end of the furnace tube 1, the data collector is connected with the processor 9, the touch display is fixedly arranged at the front end of the processor 9 and is connected with the processor 9, the heat insulation taper tube 10 is fixedly arranged at one side of the low-temperature zone of the furnace tube and is communicated with the low-temperature zone of the furnace tube, the multi-frequency transformer box 12 is arranged at the top end of the displacement vehicle 17 and is positioned below the furnace tube 1, the multi-frequency transformer box 12 is respectively connected with the high-temperature zone furnace wire 2, the medium-temperature zone furnace wire 3 and the low-temperature zone furnace, the bottom of the power box is provided with wheels, the wheels are arranged on the power supply slide rail 20 and matched with the power supply slide rail 20, wire rotating disc racks are vertically arranged on two sides of the top end of the power box, the wire rotating discs 14 are arranged at the top ends of the wire rotating disc racks through rotating shafts and can rotate on the wire rotating disc racks 14, the high-voltage wires 13 are wound on the wire rotating discs 14, and the sliding power supply 15 is connected with the multi-frequency transformer box 12 through the high-voltage wires 13;
the epitaxial system comprises an epitaxial tube 21, a source concave station 22, more than 3 direction-limiting flow-gathering covers 23, a target station 24, a box-placing boat 25, an epitaxial thin film box 26, an airflow three-way pipe 27, a sealing cover 28, a vacuum tube 29, a vacuum pump machine 30 and a damping station 31, wherein one end of the airflow three-way pipe 27 in the horizontal direction penetrates through the side wall of an operation box 32 and is communicated with the inside of the operation box 32, the other end of the airflow three-way pipe 27 in the horizontal direction is communicated with one end of the epitaxial tube 21, one end of the airflow three-way pipe 27 in the vertical direction penetrates through a fixing station 34 and is communicated with the top end of the vacuum tube 29, the bottom end of the vacuum tube 29 is connected with the vacuum pump machine 30, the vacuum pump machine 30 is; one end of the airflow three-way pipe 27 in the horizontal direction is provided with a sealing cover 28, and the sealing cover 28 is positioned in the operation box 32; the other end of the epitaxial tube 21 extends towards the furnace tube 1 and can pass through the thermal insulation taper tube 10 and is inserted into the furnace tube 1, the source concave station 22 is arranged in the epitaxial tube 21 on one side of the near furnace tube 1, the concave surface of the source concave station faces upwards, the direction-limiting flow-gathering cover 23 is uniformly arranged in the middle of the epitaxial tube 21, the target station 24 is arranged in the epitaxial tube 21 on one side of the near operation box 32, the box boat 25 is arranged on the top end of the target station 24, the epitaxial film box 26 is arranged on the box boat 25, the side wall of the epitaxial film box 26 is provided with an openable cover and an openable cover which are arranged at the end, close to the source concave station 22, of the epitaxial film box 26, and the openable cover is uniformly provided with a plurality of airflow filtering holes.
The side wall of the operation box 32 is provided with a sealing box cover 33.
In this embodiment, the processor 9 is an intel microprocessor, and the touch display is a resistive touch display.
In the embodiment, the furnace tube 1 comprises a heat-preservation and heat-insulation outer layer and a high-temperature-resistant corundum inner layer, and the end of the far extension tube 21 of the furnace tube 1 is closed.
In this embodiment, the high-temperature zone furnace wire 2, the medium-temperature zone furnace wire 3 and the low-temperature zone furnace wire 4 are all spiral nickel-chromium alloy furnace wires, and the pitches of the high-temperature zone furnace wire 2, the medium-temperature zone furnace wire 3 and the low-temperature zone furnace wire 4 are sequentially increased.
In this embodiment, the high and medium temperature zone heat insulation ring zone 5 and the medium and low temperature zone heat insulation ring zone 38 are both heat insulation ceramic fiber ring zones, and the heat insulation taper pipe 10 is a heat insulation ceramic fiber taper pipe with a tapered opening.
In this embodiment, the extension tube 21 and the direction-limiting flow-gathering cover 23 are both quartz tubes, and the direction-limiting flow-gathering cover 23 is an open curved cover.
The working process is as follows:
the furnace tube 1 is divided into a furnace tube high-temperature area, a furnace tube medium-temperature area and a furnace tube low-temperature area by the high-medium-temperature area heat-insulating ring belt 5 and the medium-low-temperature area heat-insulating ring belt 38, the high-temperature area furnace wire 2, the medium-temperature area furnace wire 3 and the low-temperature area furnace wire 4 are respectively arranged in the high-temperature area, the medium-temperature area and the low-temperature area of the furnace tube 1, the sliding power supply 15 provides electric energy for the high-temperature area furnace wire 2, the medium-temperature area furnace wire 3 and the low-temperature area furnace wire 4 of the furnace tube 1, and the high-temperature area furnace wire 2; moving the furnace tube 1 by the temperature control slide rail vehicle 18 to insert the extension tube 21 into the furnace tube 1 and controlling the heating position of the extension tube 21, wherein the high-temperature zone furnace wire 2, the medium-temperature zone furnace wire 3 and the low-temperature zone furnace wire 4 are controlled by the multi-frequency transformer box 12 to be heated; the high-temperature zone thermocouple 6, the medium-temperature zone thermocouple 37 and the low-temperature zone thermocouple 39 are respectively and uniformly arranged in a high-temperature zone, a medium-temperature zone and a low-temperature zone of the furnace tube 1, the high-temperature zone thermocouple 6, the medium-temperature zone thermocouple 37 and the low-temperature zone thermocouple 39 are respectively connected with the high-temperature zone digital display 7, the medium-temperature zone digital display 36 and the low-temperature zone digital display 8, the temperature in the heating process can be displayed by the high-temperature zone digital display 7, the medium-temperature zone digital display 36 and the low-temperature zone digital display 8, the high-temperature zone thermocouple 6, the medium-temperature zone thermocouple 37 and the low-temperature zone thermocouple 39 are respectively connected with a data collector, the data collector is connected with the processor 9, and the touch display of the processor 9 can display; during the heating process, the source on the source concave 22 in the epitaxial tube 21 starts to evaporate, and due to the temperature gradient of the epitaxial tube 21 and the pressure difference in the tube, the gaseous evaporation source flows through the current-limiting current-collecting cover 23, and finally a film is deposited on the substrate in the epitaxial film cassette 26.
When the furnace tube 1 is completely sleeved on the extension tube 21 for heating, the multi-frequency transformation box 12 can simultaneously control the high-temperature zone furnace wire 2, the medium-temperature zone furnace wire 3 and the low-temperature zone furnace wire 4 for heating; and when the heating is finished, stopping heating, cooling the extension tube 21 along with the furnace, and continuously depositing the film in the cooling process.
The furnace tube 1 can be completely sleeved on the extension tube 21 for heating, the multi-frequency transformer box 12 controls the medium-temperature zone furnace wire 3 and the low-temperature zone furnace wire 4 of the furnace tube 1 to stop heating, and the high-temperature zone furnace wire 2 continues heating; the temperature of the extension tube 21 can be ensured, and the part needing high temperature is continuously heated, so that the resources can be saved, and the deposition of the film is facilitated.
When the low-temperature region of the furnace tube 1 is sleeved outside the extension tube 21 for heating, the multi-frequency transformer box 12 controls the furnace wires 4 in the low-temperature region to heat, and the heat preservation effect when the extension tube 21 is completely heated in the furnace tube 1 can be eliminated for heating the single region.
While the present invention has been described in detail with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, and various changes and modifications can be made within the knowledge of those skilled in the art without departing from the spirit of the present invention.
Claims (7)
1. A cadmium selenide film vapor phase epitaxy preparation system is characterized in that: the device comprises a displacement system, a temperature control system, an epitaxial system, an operation box (32), a fixed table (34) and a target storage box (35), wherein the fixed table (34) is fixedly arranged at the top end of the target storage box (35), the operation box (32) is arranged on the fixed table (34), the displacement system is arranged on a support frame (19), the temperature control system is fixedly arranged at the top end of the displacement system, the epitaxial system is horizontally arranged, one end of the epitaxial system is communicated with the operation box (32), and the other end of the epitaxial system extends towards the temperature control system and can be inserted into the temperature control system;
the displacement system comprises a supporting plate (16), a displacement vehicle (17), a temperature control slide rail (18) and a power supply slide rail (20), the temperature control slide rail (18) is arranged at the top end of a supporting frame (19), wheels are arranged at the bottom end of the displacement vehicle (17), the wheels are arranged on the temperature control slide rail (18) and are matched with the temperature control slide rail (18), the supporting plate (16) is vertically arranged on two sides of the top end of the displacement vehicle (17), the temperature control system is fixedly arranged above the displacement vehicle (17) through the supporting plate (16), and the power supply slide rail (20) is arranged on the ground and is located below the temperature control slide rail (18);
the temperature control system comprises a furnace tube (1), a high-temperature zone furnace wire (2), a medium-temperature zone furnace wire (3), a low-temperature zone furnace wire (4), a high-medium temperature zone heat insulation ring belt (5), a medium-low temperature zone heat insulation ring belt (38), a high-temperature zone thermocouple (6), a medium-temperature zone thermocouple (37), a low-temperature zone thermocouple (39), a high-temperature zone digital display (7), a medium-temperature zone digital display (36), a low-temperature zone digital display (8), a data acquisition device, a processor (9), a touch display, a heat insulation taper tube (10), a temperature control lead (11), a multi-frequency transformer box (12), a high-voltage wire (13), a wire rotating disc (14) and a sliding power supply (15), wherein the furnace tube (1) is fixedly arranged on a displacement vehicle (17) through a supporting plate (16), the high-medium temperature zone heat insulation ring belt (5) and the medium-low temperature zone heat insulation ring, The furnace tube medium-temperature area and the furnace tube low-temperature area are arranged, the furnace tube low-temperature area is close to the extension system end, the high-temperature area furnace wire (2) is arranged on the inner wall of the furnace tube (1) of the furnace tube high-temperature area, the medium-temperature area furnace wire (3) is arranged on the inner wall of the furnace tube (1) of the furnace tube medium-temperature area, the low-temperature area furnace wire (4) is arranged on the inner wall of the furnace tube (1) of the furnace tube low-temperature area, the high-temperature area thermocouples (6) are uniformly arranged on the top wall of the furnace tube (1) of the furnace tube high-temperature area, the probes of the high-temperature area thermocouples (6) penetrate through the top wall of the furnace tube (1) and extend into the furnace tube (1), the medium-temperature area thermocouples (37) are uniformly arranged on the top wall of the furnace tube (1) of the furnace tube medium-temperature area, the probes of the medium-temperature area thermocouples (37) penetrate through the top wall of the furnace tube (, the high-temperature area digital display (7) is arranged at the top end of a furnace tube (1) of a furnace tube high-temperature area, the medium-temperature area digital display (36) is arranged at the top end of the furnace tube (1) of a furnace tube medium-temperature area, the low-temperature area digital display (8) is arranged at the top end of the furnace tube (1) of a furnace tube low-temperature area, the data acquisition device is fixedly arranged on the outer wall of the furnace tube (1), the high-temperature area thermocouple (6) is respectively connected with the data acquisition device and the high-temperature area digital display (7) through data lines, the medium-temperature area thermocouple (37) is respectively connected with the data acquisition device and the medium-temperature area digital display (36) through data lines, the low-temperature area thermocouple (39) is respectively connected with the data acquisition device and the low-temperature area digital display (8) through data lines, the processor (9) is arranged in the middle of the top end of the furnace tube (1), the data acquisition device is connected with the processor (9), the touch display, the heat insulation taper pipe (10) is fixedly arranged on one side of the low-temperature area of the furnace pipe and is communicated with the low-temperature area of the furnace pipe, the multi-frequency transformer box (12) is arranged at the top end of the displacement vehicle (17) and is positioned below the furnace pipe (1), the multi-frequency transformer box (12) is respectively connected with the high-temperature area furnace wire (2) and the medium-temperature area furnace wire (3) through temperature control wires (11), the low-temperature-region furnace wires (4) are connected, the sliding power supply (15) is placed in the power supply box, wheels are arranged at the bottom of the power supply box, the wheels are arranged on the power supply sliding rails (20) and are matched with the power supply sliding rails (20), wire rotating disc frames are vertically arranged on two sides of the top end of the power supply box, the wire rotating discs (14) are arranged at the top ends of the wire rotating disc frames through rotating shafts and can rotate on the wire rotating disc frames (14), the high-voltage wires (13) are wound on the wire rotating discs (14), and the sliding power supply (15) is connected with the multi-frequency power transformation box (12) through the high-voltage wires;
the epitaxial system comprises an epitaxial pipe (21), a source concave station (22), more than 3 direction-limiting flow-gathering covers (23), a target station (24), a box-placing boat (25), an epitaxial thin film box (26), an airflow three-way pipe (27), a sealing cover (28), a vacuum pipe (29), a vacuum pump machine (30) and a damping station (31), wherein one end of the airflow three-way pipe (27) in the horizontal direction penetrates through the side wall of an operation box (32) and is communicated with the inside of the operation box (32), the other end of the airflow three-way pipe (27) in the horizontal direction is communicated with one end of the epitaxial pipe (21), one end of the airflow three-way pipe (27) in the vertical direction penetrates through a fixing station (34) and is communicated with the top end of the vacuum pipe (29), the bottom end of the vacuum pipe (29) is connected with the vacuum pump machine (30), the vacuum pump machine (30) is arranged at the top end of the; one end of the airflow three-way pipe (27) in the horizontal direction is provided with a sealing cover (28), and the sealing cover (28) is positioned in the operation box (32); the other end of the epitaxial tube (21) extends towards the furnace tube (1) and can penetrate through the heat insulation taper tube (10) and is inserted into the furnace tube (1), the source concave station (22) is arranged in the epitaxial tube (21) on one side close to the furnace tube (1) and the concave surface of the source concave station faces upwards, the direction-limiting flow-gathering cover (23) is a quartz tube, the direction-limiting flow-gathering cover (23) is an open bent cover, the direction-limiting flow-gathering cover (23) is uniformly arranged in the middle of the epitaxial tube (21), the target station (24) is arranged in the epitaxial tube (21) on one side close to the operation box (32), the box-placing boat (25) is arranged at the top end of the target station (24), the epitaxial film box (26) is arranged on the box-placing boat (25), the side wall of the epitaxial film box (26) is provided with an openable cover and the openable cover is arranged at the end, close to the source concave station (22), and the openable cover is uniformly provided with a plurality of airflow filter holes.
2. The vapor phase epitaxy preparation system of a cadmium selenide thin film according to claim 1, wherein: a sealing box cover (33) is arranged on the side wall of the operation box (32).
3. The vapor phase epitaxy preparation system of a cadmium selenide thin film according to claim 1, wherein: the processor (9) is an Intel microprocessor, and the touch display is a resistance type touch display.
4. The vapor phase epitaxy preparation system of a cadmium selenide thin film according to claim 1, wherein: the furnace tube (1) comprises a heat-preservation and heat-insulation outer layer and a high-temperature-resistant corundum inner layer, and the end of the far extension tube (21) of the furnace tube (1) is closed.
5. The vapor phase epitaxy preparation system of a cadmium selenide thin film according to claim 1, wherein: the high-temperature zone furnace wire (2), the medium-temperature zone furnace wire (3) and the low-temperature zone furnace wire (4) are all spiral nickel-chromium alloy furnace wires, and the pitches of the high-temperature zone furnace wire (2), the medium-temperature zone furnace wire (3) and the low-temperature zone furnace wire (4) are gradually increased.
6. The vapor phase epitaxy preparation system of a cadmium selenide thin film according to claim 1, wherein: the high-medium temperature zone heat insulation ring belt (5) and the medium-low temperature zone heat insulation ring belt (38) are both heat insulation ceramic fiber ring belts, and the heat insulation taper pipe (10) is a heat insulation ceramic fiber taper pipe with a conical opening.
7. The vapor phase epitaxy preparation system of a cadmium selenide thin film according to claim 1, wherein: the extension tube (21) is a quartz tube.
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| JPS5492598A (en) * | 1977-12-30 | 1979-07-21 | Fujitsu Ltd | Production of cdse film |
| CN2885891Y (en) * | 2006-02-09 | 2007-04-04 | 姚荣华 | Temperature control furnace for growth of arsenide gallium monocrystal |
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| CN105571320A (en) * | 2016-02-18 | 2016-05-11 | 西北工业大学 | Multi-temperature-zone tube furnace based on real-time temperature measurement |
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|---|---|---|---|---|
| US8259772B2 (en) * | 2011-02-04 | 2012-09-04 | Fondazione Istituto Italiano Di Technologia | Fabrication of lasing microcavities consisting of highly luminescent colloidal nanocrystals |
| KR20130086806A (en) * | 2012-01-26 | 2013-08-05 | 삼성전자주식회사 | Thin film deposition apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5492598A (en) * | 1977-12-30 | 1979-07-21 | Fujitsu Ltd | Production of cdse film |
| CN2885891Y (en) * | 2006-02-09 | 2007-04-04 | 姚荣华 | Temperature control furnace for growth of arsenide gallium monocrystal |
| CN103882514A (en) * | 2014-02-28 | 2014-06-25 | 湖南大学 | Semiconductor CdS/CdSSe heterojunction nanowire and preparation method thereof |
| CN105571320A (en) * | 2016-02-18 | 2016-05-11 | 西北工业大学 | Multi-temperature-zone tube furnace based on real-time temperature measurement |
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