CN108203843A - A kind of cadmium selenide thin film vapour phase epitaxy preparation system - Google Patents
A kind of cadmium selenide thin film vapour phase epitaxy preparation system Download PDFInfo
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- CN108203843A CN108203843A CN201711306122.3A CN201711306122A CN108203843A CN 108203843 A CN108203843 A CN 108203843A CN 201711306122 A CN201711306122 A CN 201711306122A CN 108203843 A CN108203843 A CN 108203843A
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- boiler tube
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- tube
- warm area
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- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 238000000927 vapour-phase epitaxy Methods 0.000 title claims abstract description 22
- 238000006073 displacement reaction Methods 0.000 claims abstract description 34
- 238000003860 storage Methods 0.000 claims abstract description 9
- 238000009413 insulation Methods 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 18
- 230000009466 transformation Effects 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 10
- 239000000523 sample Substances 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000000835 fiber Substances 0.000 claims description 6
- 239000003708 ampul Substances 0.000 claims description 3
- 239000010431 corundum Substances 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910001120 nichrome Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004321 preservation Methods 0.000 claims description 2
- 238000013016 damping Methods 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
Abstract
The present invention relates to a kind of cadmium selenide thin film vapour phase epitaxy preparation systems, belong to technical field of manufacturing semiconductors.The preparation system includes displacement system, temperature-controlling system, epitaxial system, control box, fixed station, target storage box, fixed station is fixed at target storage box top, control box is arranged on fixed station, displacement system is arranged on supporting rack, temperature-controlling system is fixed at displacement system top, epitaxial system is horizontally disposed with and one end is connected with control box, and the other end of epitaxial system extends to temperature-controlling system and can be inserted into temperature-controlling system.The present invention is equipped with the limit to circulate after the evaporation of source to conflux cover and source and the support device of growth substrates in extension tube, is utilized respectively limit and the utilization rate in source and the high efficiency deposition of thin-film material are improved to conflux cover and support device.
Description
Technical field
The present invention relates to a kind of cadmium selenide thin film vapour phase epitaxy preparation systems, belong to field of semiconductor manufacture.
Background technology
Cadmium selenide（CdSe）It is a kind of typical group Ⅱ-Ⅵ compound semiconductor material, because it is with preferable photoelectricity spy
Property and receive significant attention.Cadmium selenide（CdSe）Greater band gap, and be direct band gap, thus cause hair in solar cell, field
Optical device, low-light adjuster, y ray detectors etc. achieve huge success.It is prepared by distinct methods and equipment
Different CdSe materials have a good application prospect.
The preparation quality for improving CdSe films is the basis of the excellent opto-electronic device of processability.Distinct device and flow
The CdSe films of preparation, crystal property is different, and film quality has differences to influence its photoelectric characteristic and related application.
The capital equipment for being presently used for preparing CdSe has vacuum evaporator, spray pyrolysis unit, molecular beam epitaxy（MBE）Device, change
Learn bath precipitation equipment, chemical vapor deposition unit etc..But there are following problems in existing preparation facilities：（1）If
Standby expensive, cost is too high；（2）Program is complicated, cumbersome；（3）Thin film deposition it is uneven, crystalline quality is bad；（4）
The utilization rate of material is low.
Invention content
In view of the problems of the existing technology the present invention, provides a kind of cadmium selenide thin film vapour phase epitaxy preparation system, this hair
Bright to be controlled using heating furnace difference warm area, easy to operate, control is accurate；Setting limit improves source to conflux cover in vacuum chamber
Utilization rate and film deposition rate.
The present invention for solve its technical problem and the technical solution adopted is that：
A kind of cadmium selenide thin film vapour phase epitaxy preparation system including displacement system, temperature-controlling system, epitaxial system, control box 32, is consolidated
Determine platform 34, target storage box 35, fixed station 34 is fixed at 35 top of target storage box, and control box 32 is arranged on fixed station 34
On, displacement system is arranged on supporting rack 19, and temperature-controlling system is fixed at displacement system top, epitaxial system be horizontally disposed with and
One end is connected with control box 32, and the other end of epitaxial system extends to temperature-controlling system and can be inserted into temperature-controlling system；
Displacement system includes support plate 16, displacement vehicle 17, temperature control sliding rail 18, power supply sliding rail 20, and temperature control sliding rail 18 is arranged on support
19 top of frame, 17 bottom end of displacement vehicle are provided with wheel, and wheel is arranged on temperature control sliding rail 18 and coordinates with temperature control sliding rail 18, support
Plate 16 is vertically arranged in the both sides on 17 top of displacement vehicle, and temperature-controlling system is fixed at 17 top of displacement vehicle by support plate 16,
Power supply sliding rail 20 is arranged on ground and positioned at the lower section of temperature control sliding rail 18；
Temperature-controlling system include boiler tube 1, high-temperature region stove silk 2, middle warm area stove silk 3, low-temperature space stove silk 4, high middle warm area heat insulation loop band 5,
Middle low-temperature space heat insulation loop band 38, high-temperature region thermocouple 6, middle warm area thermocouple 37, low-temperature space thermocouple 39, high-temperature region device for digit-displaying 7,
Middle warm area device for digit-displaying 36, low-temperature space device for digit-displaying 8, data collector, processor 9, touch display, heat-insulated Taper Pipe 10, temperature control are led
Line 11, high-tension bus-bar 13, line turntable 14, slides power supply 15 at multifrequency power transformation box 12, and boiler tube 1 is fixed at by support plate 16
On displacement vehicle 17, high middle warm area heat insulation loop band 5, middle low-temperature space heat insulation loop band 38 are vertically arranged in boiler tube 1 and are separated into boiler tube 1
Furnace tube high temperature area, boiler tube middle warm area and boiler tube low-temperature space, the nearly epitaxial system end of boiler tube low-temperature space, high-temperature region stove silk 2 are arranged on stove
1 inner wall of boiler tube of pipe high-temperature region, middle warm area stove silk 3 are arranged on 1 inner wall of boiler tube of boiler tube middle warm area, and low-temperature space stove silk 4 is arranged on
1 inner wall of boiler tube of boiler tube low-temperature space, high-temperature region thermocouple 6 are uniformly arranged on 1 roof of boiler tube in furnace tube high temperature area and high-temperature region heat
The probe of galvanic couple 6 is extended to across 1 roof of boiler tube in boiler tube 1, and middle warm area thermocouple 37 is uniformly arranged on the stove of boiler tube middle warm area
The probe of 1 roof of pipe and middle warm area thermocouple 37 is extended to across 1 roof of boiler tube in boiler tube 1, and low-temperature space thermocouple 39 is uniformly set
It puts and is extended in boiler tube 1 across 1 roof of boiler tube in 1 roof of boiler tube of boiler tube low-temperature space and the probe of low-temperature space thermocouple 39, it is high
Warm area device for digit-displaying 7 is arranged on 1 top of boiler tube in furnace tube high temperature area, and middle warm area device for digit-displaying 36 is arranged on the boiler tube 1 of boiler tube middle warm area
Top, low-temperature space device for digit-displaying 8 are arranged on 1 top of boiler tube of boiler tube low-temperature space, and data collector is fixed at 1 outer wall of boiler tube,
High-temperature region thermocouple 6 is connect respectively by data line with data collector, high-temperature region device for digit-displaying 7, and middle warm area thermocouple 37 is distinguished
It is connect by data line with data collector, middle warm area device for digit-displaying 36, low-temperature space thermocouple 39 passes through data line and data respectively
Collector, low-temperature space device for digit-displaying 8 connect, and processor 9 is arranged on the middle part on 1 top of boiler tube, and data collector connects with processor 9
It connects, touch display is fixed at the front end of processor 9 and touch display is connect with processor 9, and heat-insulated Taper Pipe 10 is fixed
It is arranged on the side of boiler tube low-temperature space and is connected with boiler tube low-temperature space, multifrequency power transformation box 12 is arranged on 17 top of displacement vehicle and is located at
The lower section of boiler tube 1, multifrequency power transformation box 12 by temperature control conducting wire 11 respectively with high-temperature region stove silk 2, middle warm area stove silk 3, low-temperature space stove silk 4
Connection is slided power supply 15 and is placed in power supply box, and the bottom of power supply box is provided with wheel, wheel be arranged on power supply sliding rail 20 and
It is matched with power supply sliding rail 20, the top both sides of power supply box are vertically arranged wired turntable mounting, and line turntable 14 is set by rotation axis
Online turntable mounting top and line turntable 14 can be rotated on turntable mounting online, and high-tension bus-bar 13 is wound on online turntable 14, is slided electric
Source 15 is connect by high-tension bus-bar 13 with multifrequency power transformation box 12；
Epitaxial system include extension tube 21, the limit of source concave station 22,3 or more to conflux cover 23, Target Station 24, put box boat 25, outer
Prolong diaphragm chamber 26, air-flow three-way pipe 27, sealing cover 28, vacuum tube 29, vacuum pump machine 30, vibration-damped table 31,27 water of air-flow three-way pipe
Square to one end pass through control box 32 side wall and connected with the inside of control box 32,27 horizontal direction of air-flow three-way pipe it is another
One end is connected with one end of extension tube 21, and one end of 27 vertical direction of air-flow three-way pipe passes through fixed station 34 and 29 top of vacuum tube
Connection, 29 bottom end of vacuum tube are connect with vacuum pump machine 30, and vacuum pump machine 30 is arranged on 31 top of vibration-damped table, and vibration-damped table 31 is arranged on
Ground；One end of 27 horizontal direction of air-flow three-way pipe is provided with sealing cover 28 and sealing cover 28 is located in control box 32；Extension tube
21 other end extends to boiler tube 1 and may pass through heat-insulated Taper Pipe 10, is inserted into boiler tube 1, and source concave station 22 is arranged on nearly boiler tube 1 one
In the extension tube 21 of side and concave surface is set upward, limits the middle part being uniformly arranged on to conflux cover 23 in extension tube 21, Target Station 24
It is arranged in the extension tube 21 of 32 side of near operation case, puts the top that box boat 25 is arranged on Target Station 24, epitaxial film box 26 is set
It puts on box boat 25 is put, the side wall of epitaxial film box 26 is equipped with retractable lid and retractable lid is arranged on the near of epitaxial film box 26
22 end of source concave station, retractable cover are evenly arranged with several air-flow filter openings；
Further, the side wall of the control box 32 is provided with sealed platform cover 33；
Further, the processor 9 is Intel microprocessors, and touch display is resistive touch display；
Further, the boiler tube 1 includes insulation outer layer and high temperature resistant corundum internal layer, 21 end of remote extension tube of boiler tube 1
Closing；
Further, high-temperature region stove silk 2, middle warm area stove silk 3, low-temperature space stove silk 4 are helical form nichrome stove silk, high temperature
Area's stove silk 2, middle warm area stove silk 3, the screw pitch of low-temperature space stove silk 4 are incremented by successively；
Further, high middle warm area heat insulation loop band 5, middle low-temperature space heat insulation loop band 38 are Thermal Insulating Ceramic Fibers annulus, heat-insulated
Taper Pipe 10 is the Thermal Insulating Ceramic Fibers Taper Pipe of tapered opening；
Further, extension tube 21, to limit to conflux cover 23 be quartz ampoule, it is open loop cover to limit to conflux cover 23；
Beneficial effects of the present invention：
（1）The cadmium selenide thin film vapour phase epitaxy preparation system of the present invention is at low cost, easy to operate；
（2）The cadmium selenide thin film vapour phase epitaxy preparation system of the present invention is tied by temperature-controlling system, displacement system, epitaxial system
The preferable uniform deposition film of crystalloid amount；
（3）The present invention cadmium selenide thin film vapour phase epitaxy preparation system pass through extension wall temperature gradient and vacuum chamber in limit to
Conflux cover improves the utilization rate in source.
Description of the drawings
Fig. 1 is the dimensional structure diagram of 1 cadmium selenide thin film vapour phase epitaxy preparation system of embodiment；
Fig. 2 is the structure diagram of 1 cadmium selenide thin film vapour phase epitaxy preparation system of embodiment；
Fig. 3 is the assembling structure signal of the temperature-controlling system of 1 cadmium selenide thin film vapour phase epitaxy preparation system of embodiment, temperature control sliding vehicle
Figure；
Fig. 4 slides the office of the assembling structure of vehicle for temperature-controlling system, the temperature control of 1 cadmium selenide thin film vapour phase epitaxy preparation system of embodiment
Portion's sectional view（Side view）；
Fig. 5 slides the office of the assembling structure of vehicle for temperature-controlling system, the temperature control of 1 cadmium selenide thin film vapour phase epitaxy preparation system of embodiment
Portion's sectional view（It faces）；
Fig. 6 is the structure diagram of 1 displacement system of embodiment；
Fig. 7 is 1 air-flow three-way pipe of embodiment, the assembling structure schematic diagram of control box, vacuum pump machine；
Fig. 8 is 1 extension tube of embodiment, source concave station, limits assembling structure schematic diagram to conflux cover, epitaxial film box；
Fig. 9 is 1 epitaxial film box structure diagram of embodiment；
Figure 10 is 1 control box structure diagram of embodiment；
Wherein, 1- boiler tubes, 2- high-temperature regions stove silk, 3- middle warm area stoves silk, 4- low-temperature space stoves silk, 5- high middle warm area heat insulation loops band, 6-
The become heat-insulated Taper Pipe of controller, 10-, 11- temperature controls of thermocouple probe, 7- high-temperature regions device for digit-displaying, 8- low-temperature spaces device for digit-displaying, 9- temperature is led
Line, 12- multifrequencies power transformation box, 13- high-tension bus-bars, 14- lines turntable, 15- slide power supply, 16- support plates, 17- temperature control displacements vehicle,
18- temperature controls sliding rail, 19- supporting rods, 20- power supplys sliding rail, 21- extension tubes, 22- sources concave station, 23- are limited to conflux cover, 24- targets
Platform, 25- put box boat, 26- epitaxial films box, 27- air-flows three-way pipe, 28- sealing covers, 29- more pieces vacuum tube, 30- vacuum pump machine,
In 31- vibration-damped tables, 32- control boxs, 33- sealed platform covers, 34- fixed stations, 35- targets storage box, 36- middle warm areas device for digit-displaying, 37-
Low-temperature space heat insulation loop band, 39- low-temperature space thermocouples in warm area thermocouple, 38-.
Specific embodiment
With reference to embodiment, the invention will be further described.
Embodiment 1：As shown in Fig. 1 ~ 10, a kind of cadmium selenide thin film vapour phase epitaxy preparation system, it is characterised in that：Including position
Shifting system, temperature-controlling system, epitaxial system, control box 32, fixed station 34, target storage box 35, fixed station 34 are fixed at target
35 top of material storage box, control box 32 are arranged on fixed station 34, and displacement system is arranged on supporting rack 19, and temperature-controlling system is fixed
Displacement system top is arranged on, epitaxial system is horizontally disposed with and one end is connected with control box 32, and the other end of epitaxial system is to control
Warm system extends and can be inserted into temperature-controlling system；
Displacement system includes support plate 16, displacement vehicle 17, temperature control sliding rail 18, power supply sliding rail 20, and temperature control sliding rail 18 is arranged on support
19 top of frame, 17 bottom end of displacement vehicle are provided with wheel, and wheel is arranged on temperature control sliding rail 18 and coordinates with temperature control sliding rail 18, support
Plate 16 is vertically arranged in the both sides on 17 top of displacement vehicle, and temperature-controlling system is fixed at 17 top of displacement vehicle by support plate 16,
Power supply sliding rail 20 is arranged on ground and positioned at the lower section of temperature control sliding rail 18；
Temperature-controlling system include boiler tube 1, high-temperature region stove silk 2, middle warm area stove silk 3, low-temperature space stove silk 4, high medium temperature heat insulation loop band 5, in
Low-temperature space heat insulation loop band 38, high-temperature region thermocouple 6, middle warm area thermocouple 37, low-temperature space thermocouple 39, high-temperature region device for digit-displaying 7, in
Warm area device for digit-displaying 36, low-temperature space device for digit-displaying 8, data collector, processor 9, touch display, heat-insulated Taper Pipe 10, temperature control conducting wire
11st, multifrequency power transformation box 12, high-tension bus-bar 13, line turntable 14, slip power supply 15, boiler tube 1 are fixedly installed in place by support plate 16
It moves on vehicle 17, high middle warm area heat insulation loop band 5, middle low-temperature space heat insulation loop band 38 are vertically arranged in boiler tube 1 and boiler tube 1 are separated into stove
Pipe high-temperature region, boiler tube middle warm area and boiler tube low-temperature space, the nearly epitaxial system end of boiler tube low-temperature space, high-temperature region stove silk 2 are arranged on boiler tube
1 inner wall of boiler tube of high-temperature region, middle warm area stove silk 3 are arranged on 1 inner wall of boiler tube of boiler tube middle warm area, and low-temperature space stove silk 4 is arranged on stove
1 inner wall of boiler tube of pipe low-temperature space, high-temperature region thermocouple 6 are uniformly arranged on 1 roof of boiler tube and high-temperature region thermoelectricity in furnace tube high temperature area
Even 6 probe is extended to across 1 roof of boiler tube in boiler tube 1, and middle warm area thermocouple 37 is uniformly arranged on the boiler tube 1 of boiler tube middle warm area
The probe of roof and middle warm area thermocouple 37 is extended to across 1 roof of boiler tube in boiler tube 1, and low-temperature space thermocouple 39 is uniformly arranged on
1 roof of boiler tube of the boiler tube low-temperature space and probe of low-temperature space thermocouple 39 is extended to across 1 roof of boiler tube in boiler tube 1, high-temperature region
Device for digit-displaying 7 is arranged on 1 top of boiler tube in furnace tube high temperature area, middle warm area device for digit-displaying 36 be arranged on boiler tube middle warm area 1 top of boiler tube,
Low-temperature space device for digit-displaying 8 is arranged on 1 top of boiler tube of boiler tube low-temperature space, and data collector is fixed at 1 outer wall of boiler tube, high-temperature region
Thermocouple 6 is connect respectively by data line with data collector, high-temperature region device for digit-displaying 7, and middle warm area thermocouple 37 passes through number respectively
Connect according to line with data collector, middle warm area device for digit-displaying 36, low-temperature space thermocouple 39 respectively by data line and data collector,
Low-temperature space device for digit-displaying 8 connects, and processor 9 is arranged on the middle part on 1 top of boiler tube, and data collector is connect with processor 9, touches aobvious
Show that device is fixed at the front end of processor 9 and touch display is connect with processor 9, heat-insulated Taper Pipe 10 is fixed at boiler tube
It the side of low-temperature space and being connected with boiler tube low-temperature space, multifrequency power transformation box 12 is arranged on 17 top of displacement vehicle and positioned at 1 lower section of boiler tube,
Multifrequency power transformation box 12 is connect by temperature control conducting wire 11 with high-temperature region stove silk 2, middle warm area stove silk 3, low-temperature space stove silk 4 respectively, is slided
Power supply 15 is placed in power supply box, and the bottom of power supply box is provided with wheel, and wheel is arranged on power supply sliding rail 20 and is slided with power supply
Rail 20 matches, and the top both sides of power supply box are vertically arranged wired turntable mounting, and line turntable 14 sets online turntable by rotation axis
Frame top and line turntable 14 can be rotated on turntable mounting online, and high-tension bus-bar 13 is wound on online turntable 14, is slided power supply 15 and is passed through
High-tension bus-bar 13 is connect with multifrequency power transformation box 12；
Epitaxial system include extension tube 21, the limit of source concave station 22,3 or more to conflux cover 23, Target Station 24, put box boat 25, outer
Prolong diaphragm chamber 26, air-flow three-way pipe 27, sealing cover 28, vacuum tube 29, vacuum pump machine 30, vibration-damped table 31,27 water of air-flow three-way pipe
Square to one end pass through control box 32 side wall and connected with the inside of control box 32,27 horizontal direction of air-flow three-way pipe it is another
One end is connected with one end of extension tube 21, and one end of 27 vertical direction of air-flow three-way pipe passes through fixed station 34 and 29 top of vacuum tube
Connection, 29 bottom end of vacuum tube are connect with vacuum pump machine 30, and vacuum pump machine 30 is arranged on 31 top of vibration-damped table, and vibration-damped table 31 is arranged on
Ground；One end of 27 horizontal direction of air-flow three-way pipe is provided with sealing cover 28 and sealing cover 28 is located in control box 32；Extension tube
21 other end extends to boiler tube 1 and may pass through heat-insulated Taper Pipe 10, is inserted into boiler tube 1, and source concave station 22 is arranged on nearly boiler tube 1 one
In the extension tube 21 of side and concave surface is set upward, limits the middle part being uniformly arranged on to conflux cover 23 in extension tube 21, Target Station 24
It is arranged in the extension tube 21 of 32 side of near operation case, puts the top that box boat 25 is arranged on Target Station 24, epitaxial film box 26 is set
It puts on box boat 25 is put, the side wall of epitaxial film box 26 is equipped with retractable lid and retractable lid is arranged on the near of epitaxial film box 26
22 end of source concave station, retractable cover are evenly arranged with several air-flow filter openings.
The side wall of control box 32 is provided with sealed platform cover 33.
Processor 9 is Intel microprocessors in the present embodiment, and touch display is resistive touch display.
Boiler tube 1 includes insulation outer layer and high temperature resistant corundum internal layer, 21 end seal of remote extension tube of boiler tube 1 in the present embodiment
It closes.
The present embodiment high temperature area stove silk 2, middle warm area stove silk 3, low-temperature space stove silk 4 are helical form nichrome stove silk,
High-temperature region stove silk 2, middle warm area stove silk 3, the screw pitch of low-temperature space stove silk 4 are incremented by successively.
High middle warm area heat insulation loop band 5, middle low-temperature space heat insulation loop band 38 are Thermal Insulating Ceramic Fibers annulus in the present embodiment, every
Hot Taper Pipe 10 is the Thermal Insulating Ceramic Fibers Taper Pipe of tapered opening.
Extension tube 21 in the present embodiment, to limit to conflux cover 23 be quartz ampoule, and it is open loop cover to limit to conflux cover 23.
The course of work：
High middle warm area heat insulation loop band 5, middle low-temperature space heat insulation loop band 38 by boiler tube 1 be separated into furnace tube high temperature area, boiler tube middle warm area and
Boiler tube low-temperature space, high-temperature region stove silk 2, middle warm area stove silk 3, low-temperature space stove silk 4 are separately positioned on the high-temperature region of boiler tube 1, middle warm area
And low-temperature space, it slides power supply 15 and provides electric energy to the high-temperature region stove silk 2, middle warm area stove silk 3, low-temperature space stove silk 4 of boiler tube 1, high temperature
The inner cavity heating of area's stove silk 2,4 pairs of middle warm area stove silk 3, low-temperature space stove silk boiler tubes 1；Moving boiler tube 1 by temperature control track sled 18 makes
Its extension tube 21 is inserted into boiler tube 1, and the heating location of controllable extension tube 21, high-temperature region stove silk 2, middle warm area stove silk 3, low
Warm area stove silk 4 controls heating by multifrequency power transformation box 12；High-temperature region thermocouple 6, middle warm area thermocouple 37, low-temperature space thermocouple 39 divide
It is not uniformly arranged on high-temperature region, middle warm area and the low-temperature space of boiler tube 1, high-temperature region thermocouple 6, middle warm area thermocouple 37, low-temperature space
Thermocouple 39 is connected respectively with high-temperature region device for digit-displaying 7, middle warm area device for digit-displaying 36, low-temperature space device for digit-displaying 8, the temperature in heating process
It can be shown by high-temperature region device for digit-displaying 7, middle warm area device for digit-displaying 36, low-temperature space device for digit-displaying 8, and high-temperature region thermocouple 6, medium temperature
Area's thermocouple 37, low-temperature space thermocouple 39 are connect with data collector, and data collector is connect with processor 9, pass through processing
The touch display of device 9 can show the temperature changing trend in boiler tube 1；In heating process, on 21 endogenous concave station 22 of extension tube
Source starts to evaporate, and since the temperature gradient and intraductal pressure of extension tube 21 are poor, gaseous evaporation source is flowed by limiting to conflux cover 23
It is logical, finally film is deposited on the substrate in extension diaphragm chamber 26.
When boiler tube 1 is sleeved on completely to be heated in extension tube 21, multifrequency power transformation box 12 can control simultaneously high-temperature region stove silk 2, in
Warm area stove silk 3, low-temperature space stove silk 4 are heated；After the completion of heating, stop heating, allow 21 furnace cooling of extension tube, it is cooled
Cheng Zhong, film can continue to deposit.
Boiler tube 1 can be sleeved on completely in extension tube 21 and heated, multifrequency power transformation box 12 controls the middle warm area stove of boiler tube 1 again
Silk 3, low-temperature space stove silk 4 stop heating, and high-temperature region stove silk 2 continues to heat；It can ensure the temperature of extension tube 21, then to needing high temperature
Part continue to heat, can economize on resources, conducive to thin film deposition.
When the low-temperature space of boiler tube 1 is sleeved on 21 external heat of extension tube, multifrequency power transformation box 12 controls low-temperature space stove silk 4 to heat,
Individual region is heated, heat preservation effect of the extension tube 21 completely in boiler tube 1 during heating can be excluded.
Specific embodiments of the present invention are explained in detail above in conjunction with attached drawing, but the present invention is not limited to above-mentioned realities
Example is applied, it within the knowledge of a person skilled in the art, can also be under the premise of present inventive concept not be departed from
Various changes can be made.
Claims (7)
1. a kind of cadmium selenide thin film vapour phase epitaxy preparation system, it is characterised in that：Including displacement system, temperature-controlling system, extension system
System, control box（32）, fixed station（34）, target storage box（35）, fixed station（34）It is fixed at target storage box（35）Top
End, control box（32）It is arranged on fixed station（34）On, displacement system is arranged on supporting rack（19）On, temperature-controlling system is fixed at
Displacement system top, epitaxial system is horizontally disposed with and one end and control box（32）Connection, the other end of epitaxial system is to temperature control system
In system extension and pluggable temperature-controlling system；
Displacement system includes support plate（16）, displacement vehicle（17）, temperature control sliding rail（18）, power supply sliding rail（20）, temperature control sliding rail（18）
It is arranged on supporting rack（19）Top, displacement vehicle（17）Bottom end is provided with wheel, and wheel is arranged on temperature control sliding rail（18）It is upper and with control
Warm sliding rail（18）Cooperation, support plate（16）It is vertically arranged in displacement vehicle（17）The both sides on top, temperature-controlling system pass through support plate
（16）It is fixed at displacement vehicle（17）Top, power supply sliding rail（20）It is arranged on ground and positioned at temperature control sliding rail（18）Lower section；
Temperature-controlling system includes boiler tube（1）, high-temperature region stove silk（2）, middle warm area stove silk（3）, low-temperature space stove silk（4）, high middle warm area every
Hot annulus（5）, middle low-temperature space heat insulation loop band（38）, high-temperature region thermocouple（6）, middle warm area thermocouple（37）, low-temperature space thermocouple
（39）, high-temperature region device for digit-displaying（7）, middle warm area device for digit-displaying（36）, low-temperature space device for digit-displaying（8）, data collector, processor（9）, touch
Touch display, heat-insulated Taper Pipe（10）, temperature control conducting wire（11）, multifrequency power transformation box（12）, high-tension bus-bar（13）, line turntable（14）, it is sliding
Dynamic power supply（15）, boiler tube（1）Pass through support plate（16）It is fixed at displacement vehicle（17）On, high middle warm area heat insulation loop band（5）, in
Low-temperature space heat insulation loop band（38）It is vertically arranged in boiler tube（1）And by boiler tube（1）It is separated into furnace tube high temperature area, boiler tube middle warm area and stove
Pipe low-temperature space, the nearly epitaxial system end of boiler tube low-temperature space, high-temperature region stove silk（2）It is arranged on the boiler tube in furnace tube high temperature area（1）Inner wall, in
Warm area stove silk（3）It is arranged on the boiler tube of boiler tube middle warm area（1）Inner wall, low-temperature space stove silk（4）It is arranged on the boiler tube of boiler tube low-temperature space
（1）Inner wall, high-temperature region thermocouple（6）It is uniformly arranged on the boiler tube in furnace tube high temperature area（1）Roof and high-temperature region thermocouple（6）Spy
Head passes through boiler tube（1）Roof extends to boiler tube（1）It is interior, middle warm area thermocouple（37）It is uniformly arranged on the boiler tube of boiler tube middle warm area
（1）Roof and middle warm area thermocouple（37）Probe across boiler tube（1）Roof extends to boiler tube（1）It is interior, low-temperature space thermocouple
（39）It is uniformly arranged on the boiler tube of boiler tube low-temperature space（1）Roof and low-temperature space thermocouple（39）Probe across boiler tube（1）Roof
Extend to boiler tube（1）It is interior, high-temperature region device for digit-displaying（7）It is arranged on the boiler tube in furnace tube high temperature area（1）Top, middle warm area device for digit-displaying（36）
It is arranged on the boiler tube of boiler tube middle warm area（1）Top, low-temperature space device for digit-displaying（8）It is arranged on the boiler tube of boiler tube low-temperature space（1）Top, number
Boiler tube is fixed at according to collector（1）Outer wall, high-temperature region thermocouple（6）Pass through data line and data collector, high temperature respectively
Area's device for digit-displaying（7）Connection, middle warm area thermocouple（37）Pass through data line and data collector, middle warm area device for digit-displaying respectively（36）Even
It connects, low-temperature space thermocouple（39）Pass through data line and data collector, low-temperature space device for digit-displaying respectively（8）Connection, processor（9）If
It puts in boiler tube（1）The middle part on top, data collector and processor（9）Connection, touch display are fixed at processor（9）
Front end and touch display and processor（9）Connection, heat-insulated Taper Pipe（10）Be fixed at the side of boiler tube low-temperature space and with
Boiler tube low-temperature space connects, multifrequency power transformation box（12）It is arranged on displacement vehicle（17）Top and positioned at boiler tube（1）Lower section, multifrequency power transformation box
（12）Pass through temperature control conducting wire（11）Respectively with high-temperature region stove silk（2）, middle warm area stove silk（3）, low-temperature space stove silk（4）Connection is slided
Power supply（15）It is placed in power supply box, the bottom of power supply box is provided with wheel, and wheel is arranged on power supply sliding rail（20）It is upper and with electricity
Source sliding rail（20）It matches, the top both sides of power supply box are vertically arranged wired turntable mounting, line turntable（14）It is set by rotation axis
Online turntable mounting top and line turntable（14）It can rotate on turntable mounting online, high-tension bus-bar（13）Wind online turntable（14）On,
Slide power supply（15）Pass through high-tension bus-bar（13）With multifrequency power transformation box（12）Connection；
Epitaxial system includes extension tube（21）, source concave station（22）, the limit of 3 or more is to conflux cover（23）, Target Station（24）, put box
Boat（25）, epitaxial film box（26）, air-flow three-way pipe（27）, sealing cover（28）, vacuum tube（29）, vacuum pump machine（30）, damping
Platform（31）, air-flow three-way pipe（27）One end of horizontal direction passes through control box（32）Side wall and and control box（32）Inside connect
It is logical, air-flow three-way pipe（27）The other end and extension tube of horizontal direction（21）One end connection, air-flow three-way pipe（27）Vertical side
To one end pass through fixed station（34）With vacuum tube（29）Top connects, vacuum tube（29）Bottom end and vacuum pump machine（30）Connection,
Vacuum pump machine（30）It is arranged on vibration-damped table（31）Top, vibration-damped table（31）It is arranged on ground；Air-flow three-way pipe（27）Horizontal direction
One end be provided with sealing cover（28）And sealing cover（28）Positioned at control box（32）It is interior；Extension tube（21）The other end to boiler tube
（1）Extend and may pass through heat-insulated Taper Pipe（10）, be inserted into boiler tube（1）It is interior, source concave station（22）It is arranged on nearly boiler tube（1）Outside side
Prolong pipe（21）Interior and concave surface is set upward, is limited to conflux cover（23）It is uniformly arranged on extension tube（21）Interior middle part, Target Station
（24）It is arranged near operation case（32）The extension tube of side（21）It is interior, put box boat（25）It is arranged on Target Station（24）Top, outside
Prolong diaphragm chamber（26）It is arranged on and puts box boat（25）On, epitaxial film box（26）Side wall be equipped with it is retractable lid and it is retractable lid setting
In extension diaphragm chamber（26）Nearly source concave station（22）End, retractable cover are evenly arranged with several air-flow filter openings.
2. cadmium selenide thin film vapour phase epitaxy preparation system according to claim 1, it is characterised in that：Control box（32）Side wall
It is provided with sealed platform cover（33）.
3. cadmium selenide thin film vapour phase epitaxy preparation system according to claim 1, it is characterised in that：Processor（9）For English spy
That microprocessor, touch display are resistive touch display.
4. cadmium selenide thin film vapour phase epitaxy preparation system according to claim 1, it is characterised in that：Boiler tube（1）Including heat preservation
Heat insulating outer shield and high temperature resistant corundum internal layer, boiler tube（1）Remote extension tube（21）End seal is closed.
5. cadmium selenide thin film vapour phase epitaxy preparation system according to claim 1, it is characterised in that：High-temperature region stove silk（2）, in
Warm area stove silk（3）, low-temperature space stove silk（4）It is helical form nichrome stove silk, high-temperature region stove silk（2）, middle warm area stove silk（3）、
Low-temperature space stove silk（4）Screw pitch it is incremented by successively.
6. cadmium selenide thin film vapour phase epitaxy preparation system according to claim 1, it is characterised in that：High middle warm area heat insulation loop band
（5）, middle low-temperature space heat insulation loop band（38）It is Thermal Insulating Ceramic Fibers annulus, heat-insulated Taper Pipe（10）Thermal insulation ceramics for tapered opening
Fiber Taper Pipe.
7. cadmium selenide thin film vapour phase epitaxy preparation system according to claim 1, it is characterised in that：Extension tube（21）, limit to
Conflux cover（23）It is quartz ampoule, limits to conflux cover（23）For open loop cover.
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| CN201711306122.3A CN108203843B (en) | 2017-12-11 | 2017-12-11 | Cadmium selenide film vapor phase epitaxy preparation system |
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| CN201711306122.3A CN108203843B (en) | 2017-12-11 | 2017-12-11 | Cadmium selenide film vapor phase epitaxy preparation system |
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| JPS5492598A (en) * | 1977-12-30 | 1979-07-21 | Fujitsu Ltd | Production of cdse film |
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| US20120201265A1 (en) * | 2011-02-04 | 2012-08-09 | Fondazione Istituto Italiano Di Tecnologia | Fabrication of lasing microcavities consisting of highly luminescent colloidal nanocrystals |
| US20130206066A1 (en) * | 2012-01-26 | 2013-08-15 | Samsung Electronics Co., Ltd. | Thin film deposition apparatus |
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| CN105571320A (en) * | 2016-02-18 | 2016-05-11 | 西北工业大学 | Multi-temperature-zone tube furnace based on real-time temperature measurement |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5492598A (en) * | 1977-12-30 | 1979-07-21 | Fujitsu Ltd | Production of cdse film |
| CN2885891Y (en) * | 2006-02-09 | 2007-04-04 | 姚荣华 | Temperature control furnace for growth of arsenide gallium monocrystal |
| US20120201265A1 (en) * | 2011-02-04 | 2012-08-09 | Fondazione Istituto Italiano Di Tecnologia | Fabrication of lasing microcavities consisting of highly luminescent colloidal nanocrystals |
| US20130206066A1 (en) * | 2012-01-26 | 2013-08-15 | Samsung Electronics Co., Ltd. | Thin film deposition apparatus |
| CN103882514A (en) * | 2014-02-28 | 2014-06-25 | 湖南大学 | Semiconductor CdS/CdSSe heterojunction nanowire and preparation method thereof |
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