JPS54884A - Manufacture of field effect transistor - Google Patents

Manufacture of field effect transistor

Info

Publication number
JPS54884A
JPS54884A JP6549477A JP6549477A JPS54884A JP S54884 A JPS54884 A JP S54884A JP 6549477 A JP6549477 A JP 6549477A JP 6549477 A JP6549477 A JP 6549477A JP S54884 A JPS54884 A JP S54884A
Authority
JP
Japan
Prior art keywords
manufacture
field effect
effect transistor
narrowing
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6549477A
Other languages
English (en)
Other versions
JPS5921193B2 (ja
Inventor
Toshio Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP52065494A priority Critical patent/JPS5921193B2/ja
Publication of JPS54884A publication Critical patent/JPS54884A/ja
Publication of JPS5921193B2 publication Critical patent/JPS5921193B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP52065494A 1977-06-03 1977-06-03 電界効果トランジスタの製造方法 Expired JPS5921193B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52065494A JPS5921193B2 (ja) 1977-06-03 1977-06-03 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52065494A JPS5921193B2 (ja) 1977-06-03 1977-06-03 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS54884A true JPS54884A (en) 1979-01-06
JPS5921193B2 JPS5921193B2 (ja) 1984-05-18

Family

ID=13288691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52065494A Expired JPS5921193B2 (ja) 1977-06-03 1977-06-03 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5921193B2 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5442632A (en) * 1977-09-09 1979-04-04 Shikoku Electric Power Co Inc Receiving circuit for power source outside power plant
JPS58153374A (ja) * 1982-03-08 1983-09-12 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS6242567A (ja) * 1985-08-20 1987-02-24 Matsushita Electronics Corp 電界効果トランジスタの製造方法
US5110751A (en) * 1990-02-26 1992-05-05 Rohm Co., Ltd. Method of manufacturing a compound semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5442632A (en) * 1977-09-09 1979-04-04 Shikoku Electric Power Co Inc Receiving circuit for power source outside power plant
JPS58153374A (ja) * 1982-03-08 1983-09-12 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS6242567A (ja) * 1985-08-20 1987-02-24 Matsushita Electronics Corp 電界効果トランジスタの製造方法
US5110751A (en) * 1990-02-26 1992-05-05 Rohm Co., Ltd. Method of manufacturing a compound semiconductor device
US5296728A (en) * 1990-02-26 1994-03-22 Rohm Co., Ltd. Compound semiconductor device with different gate-source and gate-drain spacings

Also Published As

Publication number Publication date
JPS5921193B2 (ja) 1984-05-18

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