JPS54866A - Molecular beam crystal growing device - Google Patents

Molecular beam crystal growing device

Info

Publication number
JPS54866A
JPS54866A JP6595077A JP6595077A JPS54866A JP S54866 A JPS54866 A JP S54866A JP 6595077 A JP6595077 A JP 6595077A JP 6595077 A JP6595077 A JP 6595077A JP S54866 A JPS54866 A JP S54866A
Authority
JP
Japan
Prior art keywords
molecular beam
crystal growing
growing device
beam crystal
interaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6595077A
Other languages
English (en)
Inventor
Yasuo Seki
Tatsuo Fuji
Hisatsune Watanabe
Akira Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6595077A priority Critical patent/JPS54866A/ja
Publication of JPS54866A publication Critical patent/JPS54866A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP6595077A 1977-06-03 1977-06-03 Molecular beam crystal growing device Pending JPS54866A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6595077A JPS54866A (en) 1977-06-03 1977-06-03 Molecular beam crystal growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6595077A JPS54866A (en) 1977-06-03 1977-06-03 Molecular beam crystal growing device

Publications (1)

Publication Number Publication Date
JPS54866A true JPS54866A (en) 1979-01-06

Family

ID=13301755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6595077A Pending JPS54866A (en) 1977-06-03 1977-06-03 Molecular beam crystal growing device

Country Status (1)

Country Link
JP (1) JPS54866A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5738895A (en) * 1980-08-15 1982-03-03 Nippon Steel Corp Directional electromagnetic steel plate having excellent sectility
JPS599178A (ja) * 1982-07-08 1984-01-18 Matsushita Electric Ind Co Ltd 薄膜金属
JPS5913080A (ja) * 1982-07-12 1984-01-23 Matsushita Electric Ind Co Ltd 薄膜金属
JPS60728A (ja) * 1983-06-16 1985-01-05 Sanyo Electric Co Ltd 分子線エピタキシヤル成長法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5738895A (en) * 1980-08-15 1982-03-03 Nippon Steel Corp Directional electromagnetic steel plate having excellent sectility
JPS599178A (ja) * 1982-07-08 1984-01-18 Matsushita Electric Ind Co Ltd 薄膜金属
JPS5913080A (ja) * 1982-07-12 1984-01-23 Matsushita Electric Ind Co Ltd 薄膜金属
JPS60728A (ja) * 1983-06-16 1985-01-05 Sanyo Electric Co Ltd 分子線エピタキシヤル成長法

Similar Documents

Publication Publication Date Title
JPS5258940A (en) Laser recording method and device
JPS54866A (en) Molecular beam crystal growing device
JPS5414692A (en) Liminous semiconductor device
JPS52123173A (en) Sputter etching method
JPS5432985A (en) Flattening method for substrate surface with protrusion
JPS544567A (en) Growing apparatus of ion beam crystal
JPS52154528A (en) Remedy for glaucoma
JPS51149781A (en) Device for mounting semiconductor laserelement
JPS5231662A (en) Cleavage method of crystal thin plate
JPS5342759A (en) Interference measuring method
JPS5380160A (en) Manufacture of substrate for semiconductor device
JPS5236044A (en) Unit for forming hologram
JPS5215280A (en) Cleavage semiconductor laser equipped with side surface light take-out waveguide
JPS52117900A (en) Growing method for single crystal thin film of bismuth oxide compounds
JPS5260581A (en) Semiconductor device
JPS549958A (en) Production for spacing defining film of liquid crystal diaply panels
JPS524187A (en) P-n conjunction type solid element
JPS5312267A (en) Growth method of semiconductor crystal
JPS51114710A (en) Bottom plate structure
JPS524783A (en) Molecular beam crystal growth method
JPS5349950A (en) Semiconductor device
JPS51123781A (en) A liquid phase crystal growth apparatus
JPS5338279A (en) Production of semiconductor device
JPS53143242A (en) Production of optical diffusing plate
JPS52155189A (en) Multiple layer crystal growth