JPS5477592A - Solar battery - Google Patents
Solar batteryInfo
- Publication number
- JPS5477592A JPS5477592A JP14480677A JP14480677A JPS5477592A JP S5477592 A JPS5477592 A JP S5477592A JP 14480677 A JP14480677 A JP 14480677A JP 14480677 A JP14480677 A JP 14480677A JP S5477592 A JPS5477592 A JP S5477592A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- sio
- layer
- opened
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE: To eliminate uneven plating and adhesion defect by keeping substrate at a base potential and flowing a minute current only for the initial extremely short time in order to give catalytic action to the substrate.
CONSTITUTION: After SiO2 2 is made by subjecting an n type Si substrate, which has been left intact after polishing, to wet oxidation, it is opened with a hole, where a P+ layer 3 is made. Again, the surface is covered with the SiO2 2, in which a hole is opened and phosphorus is diffused therethrough to make an N+ layer 4. The SiO2 is removed, newly SiO2 is provided, and a window is opened on the layer 4. After B is diffused and etching is lightly performed, a wafer 7 is put in an electroless Ni plating solution of about 60°C. Here, the wafer is made negative potential and the platinum positive potential. The negative pole is connected only at one position of the exposed P+ layer 3 of one solar battery element in the wafer and current is supplied for 10 seconds at 25mA/cm2. Next , the power source is turned OFF when intensive gas evolves and at the same time the color of Ni is formed in the electrode forming portions of the wafer. Next, the wafer is dipped for 10 minutes in the electroless Ni plating solution to make Ni electrodes 5. This method eliminaties uneven plating and adhesion defect despite observation with a microscope.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14480677A JPS5477592A (en) | 1977-12-02 | 1977-12-02 | Solar battery |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14480677A JPS5477592A (en) | 1977-12-02 | 1977-12-02 | Solar battery |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5477592A true JPS5477592A (en) | 1979-06-21 |
Family
ID=15370887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14480677A Pending JPS5477592A (en) | 1977-12-02 | 1977-12-02 | Solar battery |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5477592A (en) |
-
1977
- 1977-12-02 JP JP14480677A patent/JPS5477592A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3879771D1 (en) | ETCHING METHOD FOR PRODUCING HOLE OPENINGS OR TRENCHES IN N-DOPED SILICON. | |
EP0268272A3 (en) | Method of removing electrical shorts and shunts from a thin-film semiconductor device | |
JPS6444074A (en) | Method of recycling silicon substrate material of metal insulation semiconductor reverse layer solar battery | |
JPS5471564A (en) | Production of semiconductor device | |
JPS5477592A (en) | Solar battery | |
JPS6449272A (en) | Manufacture of semiconductor device | |
JPS6427229A (en) | Etching method for semiconductor substrate | |
JPS57157525A (en) | Surface treating method | |
JPS55151334A (en) | Fabricating method of semiconductor device | |
SE8503833D0 (en) | PROCEDURE FOR THE PRODUCTION OF SOLAR CELLS | |
JPS5353972A (en) | Anodic treatment method | |
JPS5661175A (en) | Thin-film solar cell | |
JPS56130977A (en) | Solar battery | |
JPS5477593A (en) | Solar battery | |
JPS56135937A (en) | Manufacture of semiconductor device | |
JPS5712579A (en) | Buried type semiconductor laser | |
JPS5797630A (en) | Manufacture of semiconductor device | |
JPS5683981A (en) | Semiconductor device and manufacture | |
JPS56148825A (en) | Manufacture of semiconductor device | |
JPS648296A (en) | Production of silicon dioxide film | |
JPS54106174A (en) | Semiconductor device and its manufacture | |
JPS5475275A (en) | Manufacture of semiconductor device | |
JPS5279874A (en) | Anodization method | |
JPS55121645A (en) | Method of fabricating thin film semiconductor device | |
JPS57136366A (en) | Manufacture of semiconductor device |