JPS5477047A - Microwave semiconductor switch - Google Patents

Microwave semiconductor switch

Info

Publication number
JPS5477047A
JPS5477047A JP14330477A JP14330477A JPS5477047A JP S5477047 A JPS5477047 A JP S5477047A JP 14330477 A JP14330477 A JP 14330477A JP 14330477 A JP14330477 A JP 14330477A JP S5477047 A JPS5477047 A JP S5477047A
Authority
JP
Japan
Prior art keywords
diode
bias
terminal
microwave
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14330477A
Other languages
Japanese (ja)
Inventor
Katsuzo Uenishi
Seiichi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP14330477A priority Critical patent/JPS5477047A/en
Publication of JPS5477047A publication Critical patent/JPS5477047A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/10Auxiliary devices for switching or interrupting
    • H01P1/15Auxiliary devices for switching or interrupting by semiconductor devices

Landscapes

  • Electronic Switches (AREA)

Abstract

PURPOSE:To make it possible to omit an additional equipment for reflected-power processing by preventing microwave power reflected during a cut-off state from appearing at an input terminal by making a matching load absorb it. CONSTITUTION:A positive potential is applied to bias terminal 34 to bias diode 30 reversely and at the same time, a negative potential is applied to bias terminal 28 to bias diode 24 forward, so that this switch will make a connection. Namely, a microwave is inputted from input terminal 21 and reaches terminal 22. Next, reversing bias conditions allows the switch to be OFF. At this time, the RF impedance of diode 30 can be made equal to that of the microwave transmission line by controlling a forward current flowing to diode 30 and in this state, diode 30 becomes a matching load, which absorbs the microwave power, so that it will not appear by being reflected to input terminal 21.
JP14330477A 1977-12-01 1977-12-01 Microwave semiconductor switch Pending JPS5477047A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14330477A JPS5477047A (en) 1977-12-01 1977-12-01 Microwave semiconductor switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14330477A JPS5477047A (en) 1977-12-01 1977-12-01 Microwave semiconductor switch

Publications (1)

Publication Number Publication Date
JPS5477047A true JPS5477047A (en) 1979-06-20

Family

ID=15335636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14330477A Pending JPS5477047A (en) 1977-12-01 1977-12-01 Microwave semiconductor switch

Country Status (1)

Country Link
JP (1) JPS5477047A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2532495A1 (en) * 1982-08-25 1984-03-02 Dx Antenna HIGH FREQUENCY SIGNAL COMMUNICATION DEVICE, IN PARTICULAR FOR SATELLITE SIGNAL RECEIVING SYSTEM

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2532495A1 (en) * 1982-08-25 1984-03-02 Dx Antenna HIGH FREQUENCY SIGNAL COMMUNICATION DEVICE, IN PARTICULAR FOR SATELLITE SIGNAL RECEIVING SYSTEM

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