JPS5474370A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5474370A JPS5474370A JP14182377A JP14182377A JPS5474370A JP S5474370 A JPS5474370 A JP S5474370A JP 14182377 A JP14182377 A JP 14182377A JP 14182377 A JP14182377 A JP 14182377A JP S5474370 A JPS5474370 A JP S5474370A
- Authority
- JP
- Japan
- Prior art keywords
- beam lead
- chip
- curve
- semiconductor device
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
PURPOSE: To obtain a semiconductor device of simple constitution with improved radiation characteristics of a beam lead element.
CONSTITUTION: After the beam lead element is bonded to base S, chip C is pushed down by applying pressure to its back surface, thereby making chip c in contact with base S. Here, although pushing the beam lead element down may curve beam lead L, simple pushing down causes beam lead L to curve greatly near the edge part of chip C and, in conseauence, chip C may be shorted by beam lead L. For the purpose, deformation part L' is formed on the beam lead and at the time when force strong enough to curve beam lead L is applied, the part isolated from the edge of chip C is allowed to curve invariably as shown by broken line.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52141823A JPS6020897B2 (en) | 1977-11-26 | 1977-11-26 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52141823A JPS6020897B2 (en) | 1977-11-26 | 1977-11-26 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5474370A true JPS5474370A (en) | 1979-06-14 |
JPS6020897B2 JPS6020897B2 (en) | 1985-05-24 |
Family
ID=15300948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52141823A Expired JPS6020897B2 (en) | 1977-11-26 | 1977-11-26 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6020897B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02244650A (en) * | 1989-03-16 | 1990-09-28 | Fujitsu Ltd | Semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6375287U (en) * | 1986-11-07 | 1988-05-19 |
-
1977
- 1977-11-26 JP JP52141823A patent/JPS6020897B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02244650A (en) * | 1989-03-16 | 1990-09-28 | Fujitsu Ltd | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6020897B2 (en) | 1985-05-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5240071A (en) | Semiconductor device | |
JPS5474370A (en) | Semiconductor device | |
JPS51126063A (en) | Wire bonding method | |
JPS523383A (en) | Manufacturing method of semiconductor device electrode | |
JPS51151069A (en) | Electrode forming method of a semiconductor element | |
JPS51150984A (en) | Dielectric isolation method | |
JPS53110468A (en) | Metal mould for semiconductor device | |
JPS52153383A (en) | Preparation of semiconductor device | |
JPS51130169A (en) | Semiconductor device | |
JPS5210676A (en) | Semiconductor device | |
JPS535574A (en) | Manufacture of semiconductor device | |
JPS5414161A (en) | Semiconductor device | |
JPS548834A (en) | Semiconductor rectifying device | |
JPS53124975A (en) | Semiconductor device | |
JPS5275979A (en) | Semiconductor device | |
JPS544568A (en) | Semiconductor device and production of the same | |
JPS5397367A (en) | Semiconductor device and its manufacture | |
JPS5429580A (en) | Semiconductor device | |
JPS52115177A (en) | Semiconductor device | |
JPS5218172A (en) | Semiconductor device | |
JPS5283166A (en) | Semiconductor device and its production | |
JPS5427365A (en) | Semiconductor device | |
JPS5418289A (en) | Manufacture of semiconductor device with radiator | |
JPS51144577A (en) | Semiconductor device | |
JPS5399764A (en) | Semiconductor device having bonding pad |