JPS5467781A - Vertical junction type field effect transistor - Google Patents

Vertical junction type field effect transistor

Info

Publication number
JPS5467781A
JPS5467781A JP13491877A JP13491877A JPS5467781A JP S5467781 A JPS5467781 A JP S5467781A JP 13491877 A JP13491877 A JP 13491877A JP 13491877 A JP13491877 A JP 13491877A JP S5467781 A JPS5467781 A JP S5467781A
Authority
JP
Japan
Prior art keywords
regions
source
gate
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13491877A
Other languages
Japanese (ja)
Inventor
Yasunari Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13491877A priority Critical patent/JPS5467781A/en
Publication of JPS5467781A publication Critical patent/JPS5467781A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To decrease the capacity between gate and source by providing semiconductor regions of a higher specific resistance than channel regions between low specific resistance semiconductor layers and gate regions.
CONSTITUTION: Regions 10 of N- type are provided between an N+ semiconductor substrate 1 which becomes a source and P type gate regions 3 and further N+ protrusions 11 are provided to the N+ substrate 1 which becomes a source and are approached to channel regions 7 to lower the resistance on the source side, take a distance on the portions opposing to the gates 3 and source substrate 1 and permit easy depletion with the N- type regions 10, whereby the capacity between the source and gate is reduced.
COPYRIGHT: (C)1979,JPO&Japio
JP13491877A 1977-11-09 1977-11-09 Vertical junction type field effect transistor Pending JPS5467781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13491877A JPS5467781A (en) 1977-11-09 1977-11-09 Vertical junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13491877A JPS5467781A (en) 1977-11-09 1977-11-09 Vertical junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5467781A true JPS5467781A (en) 1979-05-31

Family

ID=15139569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13491877A Pending JPS5467781A (en) 1977-11-09 1977-11-09 Vertical junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5467781A (en)

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