JPS5459884A - Electron beam lithography apparatus - Google Patents
Electron beam lithography apparatusInfo
- Publication number
- JPS5459884A JPS5459884A JP12584377A JP12584377A JPS5459884A JP S5459884 A JPS5459884 A JP S5459884A JP 12584377 A JP12584377 A JP 12584377A JP 12584377 A JP12584377 A JP 12584377A JP S5459884 A JPS5459884 A JP S5459884A
- Authority
- JP
- Japan
- Prior art keywords
- sample base
- computer
- mark
- measuring instrument
- reflecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE: To obtain precision lithography by adding two reference marks in separate positions on a sample base, measuring the distance therebetween with a laser interference length measuring instrument and performing temperature compensation of electron beam radiation position.
CONSTITUTION: Two reference marks 7X, 7Y are newly provided in addition to a reference mark 7 provided on a sample base 4, and a laser interference length measuring instrument and mirrors 13, 13X, 13Y for projecting laser light 16 to the reflecting faces 5X, 5Y of the mirror 5 mounted to the sample base 4 are disposed in proximity to the sample base 4. With such constitution, first the position of the mark 7 is detected with a reflecting electron detector 6 and is sent to a computer 10 via coding mechanism 9. At the same time, the distance between the reflecting face 5X and morror 13X, and between the reflecting face 5Y and mirror 13Y are measured and are applied to the computer 10. Next, the sample base 14 provided on the sample base 4 is moved to the mark 7X and the distance thereof is measured with the length measuring instrument 11. The amount of deviation of the sample base 14 accompanied with the temperature change is then computed with the computer 10 and is corrected with a deflector 3
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52125843A JPS5952534B2 (en) | 1977-10-21 | 1977-10-21 | Electron beam lithography equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52125843A JPS5952534B2 (en) | 1977-10-21 | 1977-10-21 | Electron beam lithography equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5459884A true JPS5459884A (en) | 1979-05-14 |
JPS5952534B2 JPS5952534B2 (en) | 1984-12-20 |
Family
ID=14920310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52125843A Expired JPS5952534B2 (en) | 1977-10-21 | 1977-10-21 | Electron beam lithography equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5952534B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60254615A (en) * | 1984-05-30 | 1985-12-16 | Toshiba Mach Co Ltd | Electron beam exposure |
JPS642437U (en) * | 1987-06-24 | 1989-01-09 | ||
JPH02241022A (en) * | 1989-03-15 | 1990-09-25 | Hikari Keisoku Gijutsu Kaihatsu Kk | Electron beam exposure apparatus |
-
1977
- 1977-10-21 JP JP52125843A patent/JPS5952534B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60254615A (en) * | 1984-05-30 | 1985-12-16 | Toshiba Mach Co Ltd | Electron beam exposure |
JPS642437U (en) * | 1987-06-24 | 1989-01-09 | ||
JPH02241022A (en) * | 1989-03-15 | 1990-09-25 | Hikari Keisoku Gijutsu Kaihatsu Kk | Electron beam exposure apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPS5952534B2 (en) | 1984-12-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6008902A (en) | Method and device for heterodyne interferometer error correction | |
CA2053839A1 (en) | Thickening measuring instrument | |
JPS5616802A (en) | Method and unit for measuring electro-optically dimension,position and form of object | |
US4950079A (en) | Combined scale and interferometer | |
Lewis | Measurement of length, surface form and thermal expansion coefficient of length bars up to 1.5 m using multiple-wavelength phase-stepping interferometry | |
JPS5512406A (en) | Method of compensating error in measuring circle or arc and meter with compensator | |
CN207197480U (en) | A kind of calibrating device for displacement sensor based on air floating platform | |
Lewis | Absolute length measurement using multiple-wavelength phase-stepping interferometry | |
Brand et al. | A laser measurement system for the high-precision calibration of displacement transducers | |
JPS5459884A (en) | Electron beam lithography apparatus | |
JPS55119006A (en) | Displacement measuring instrument | |
JPS57104803A (en) | Displacement measuring apparatus | |
Gillilland et al. | Use of a laser for length measurement by fringe counting | |
JPS5585207A (en) | Projection location measuring device | |
JPS57114344A (en) | Apparatus for precise positioning | |
TW376446B (en) | Six-degree-of-freedom measurement apparatus and method | |
Steinmetz | Displacement measurement repeatability in tens of nanometers with laser interferometry | |
JPS57162431A (en) | Method for exposure to electron beam | |
JPS5558405A (en) | Electron beam type observation apparatus | |
JPH05223909A (en) | Measuring method for magnetic field | |
Neyer | Velocity interferometer system for any reflector (VISAR) | |
JPS5512483A (en) | Right angle measurement | |
GB2020845A (en) | Optical Compensation of Measuring Errors | |
SU376653A1 (en) | DEVICE FOR MEASURING OBJECT MOVEMENTS | |
Hart et al. | Recent Measurements of Metre-Bars on the NRC (Canada) Interference Comparator |