JPS5455178A - Protecting device - Google Patents

Protecting device

Info

Publication number
JPS5455178A
JPS5455178A JP12143577A JP12143577A JPS5455178A JP S5455178 A JPS5455178 A JP S5455178A JP 12143577 A JP12143577 A JP 12143577A JP 12143577 A JP12143577 A JP 12143577A JP S5455178 A JPS5455178 A JP S5455178A
Authority
JP
Japan
Prior art keywords
source voltages
transistor
constitution
drain
protect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12143577A
Other languages
Japanese (ja)
Inventor
Kazuhiro Tasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12143577A priority Critical patent/JPS5455178A/en
Publication of JPS5455178A publication Critical patent/JPS5455178A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE: To protect the MOSFETs of the output stage by using enhancement type FETs for output elements, detecting the sum of the drain-source voltages and gate- source voltages of the FETs or the gate-source voltages in a power amplifier and cutting off inputs and outputs.
CONSTITUTION: The protection circuit for a push-pull negative feedback power amplifier 12 is constituted by an enhancement type N channel MOSFET 1, likewise a P channel MOSFET 2, a load 3, resistances 8 thru 10, a PNP transistor 11. With such constitution, the sum of the drain-source voltages divided by the resistors 10 and 8 is detected and when this exceeds a fixed value the transistor 11 is conducted, in order to protect the output stage MOSFETs 1, 2 when a shorting or the like occurs in the load 3. Other circuits such as relay, SCR, transistor, etc. are driven by this current, by which the input terminals 16, 17 of the amplifier 12 are cut off. Thereby, the protecting device is made simple
COPYRIGHT: (C)1979,JPO&Japio
JP12143577A 1977-10-12 1977-10-12 Protecting device Pending JPS5455178A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12143577A JPS5455178A (en) 1977-10-12 1977-10-12 Protecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12143577A JPS5455178A (en) 1977-10-12 1977-10-12 Protecting device

Publications (1)

Publication Number Publication Date
JPS5455178A true JPS5455178A (en) 1979-05-02

Family

ID=14811057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12143577A Pending JPS5455178A (en) 1977-10-12 1977-10-12 Protecting device

Country Status (1)

Country Link
JP (1) JPS5455178A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4487458A (en) * 1982-09-28 1984-12-11 Eaton Corporation Bidirectional source to source stacked FET gating circuit
US4547791A (en) * 1981-04-29 1985-10-15 U.S. Philips Corporation CMOS-Bipolar Darlington device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4547791A (en) * 1981-04-29 1985-10-15 U.S. Philips Corporation CMOS-Bipolar Darlington device
US4487458A (en) * 1982-09-28 1984-12-11 Eaton Corporation Bidirectional source to source stacked FET gating circuit

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