JPS5455174A - Etching method - Google Patents

Etching method

Info

Publication number
JPS5455174A
JPS5455174A JP10987778A JP10987778A JPS5455174A JP S5455174 A JPS5455174 A JP S5455174A JP 10987778 A JP10987778 A JP 10987778A JP 10987778 A JP10987778 A JP 10987778A JP S5455174 A JPS5455174 A JP S5455174A
Authority
JP
Japan
Prior art keywords
etching method
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10987778A
Other languages
English (en)
Other versions
JPS6158975B2 (ja
Inventor
Emu Efurasu Rinda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5455174A publication Critical patent/JPS5455174A/ja
Publication of JPS6158975B2 publication Critical patent/JPS6158975B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP10987778A 1977-10-06 1978-09-08 Etching method Granted JPS5455174A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84008577A 1977-10-06 1977-10-06

Publications (2)

Publication Number Publication Date
JPS5455174A true JPS5455174A (en) 1979-05-02
JPS6158975B2 JPS6158975B2 (ja) 1986-12-13

Family

ID=25281410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10987778A Granted JPS5455174A (en) 1977-10-06 1978-09-08 Etching method

Country Status (3)

Country Link
EP (1) EP0001538B1 (ja)
JP (1) JPS5455174A (ja)
DE (1) DE2862150D1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2727255A1 (de) * 1976-06-21 1977-12-29 Unilever Nv Shampoo
JPS5691446A (en) * 1979-12-25 1981-07-24 Seiko Epson Corp Forming of element segregation region of semiconductor integrated circuit
JPS5691447A (en) * 1979-12-25 1981-07-24 Seiko Epson Corp Forming of element segregation region of semiconductor integrated circuit
JPS5775429A (en) * 1980-10-28 1982-05-12 Toshiba Corp Manufacture of semiconductor device
JPS5799745A (en) * 1980-10-20 1982-06-21 Western Electric Co Method of producing integrated circuit device
JPS62228491A (ja) * 1986-03-31 1987-10-07 Canon Inc ドライエツチングガス及びドライエツチング方法
JPH01133323A (ja) * 1987-11-19 1989-05-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH03162602A (ja) * 1989-08-16 1991-07-12 Internatl Business Mach Corp <Ibm> Ａｆｍ／ｓｔｍプロフィロメトリ用マイクロメカニカルセンサの製造方法
JP2010199364A (ja) * 2009-02-26 2010-09-09 Kyocera Corp 反応性イオンエッチング装置と基板のエッチング方法
JP2017208387A (ja) * 2016-05-16 2017-11-24 東京エレクトロン株式会社 エッチング方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4324611A (en) * 1980-06-26 1982-04-13 Branson International Plasma Corporation Process and gas mixture for etching silicon dioxide and silicon nitride
DE3175576D1 (en) * 1980-12-11 1986-12-11 Toshiba Kk Dry etching device and method
DE68926855T2 (de) * 1988-11-18 1997-02-13 Shibaura Eng Works Ltd Trockenätzverfahren
DE10224137A1 (de) * 2002-05-24 2003-12-04 Infineon Technologies Ag Ätzgas und Verfahren zum Trockenätzen

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036075A (ja) * 1973-05-17 1975-04-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036075A (ja) * 1973-05-17 1975-04-04

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2727255A1 (de) * 1976-06-21 1977-12-29 Unilever Nv Shampoo
JPS5691446A (en) * 1979-12-25 1981-07-24 Seiko Epson Corp Forming of element segregation region of semiconductor integrated circuit
JPS5691447A (en) * 1979-12-25 1981-07-24 Seiko Epson Corp Forming of element segregation region of semiconductor integrated circuit
JPS5799745A (en) * 1980-10-20 1982-06-21 Western Electric Co Method of producing integrated circuit device
JPS5775429A (en) * 1980-10-28 1982-05-12 Toshiba Corp Manufacture of semiconductor device
JPH0157495B2 (ja) * 1980-10-28 1989-12-06 Tokyo Shibaura Electric Co
JPS62228491A (ja) * 1986-03-31 1987-10-07 Canon Inc ドライエツチングガス及びドライエツチング方法
JPH01133323A (ja) * 1987-11-19 1989-05-25 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH03162602A (ja) * 1989-08-16 1991-07-12 Internatl Business Mach Corp <Ibm> Ａｆｍ／ｓｔｍプロフィロメトリ用マイクロメカニカルセンサの製造方法
JP2010199364A (ja) * 2009-02-26 2010-09-09 Kyocera Corp 反応性イオンエッチング装置と基板のエッチング方法
JP2017208387A (ja) * 2016-05-16 2017-11-24 東京エレクトロン株式会社 エッチング方法

Also Published As

Publication number Publication date
EP0001538A1 (fr) 1979-04-18
JPS6158975B2 (ja) 1986-12-13
DE2862150D1 (en) 1983-02-17
EP0001538B1 (fr) 1983-01-12

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