JPS5455174A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS5455174A JPS5455174A JP10987778A JP10987778A JPS5455174A JP S5455174 A JPS5455174 A JP S5455174A JP 10987778 A JP10987778 A JP 10987778A JP 10987778 A JP10987778 A JP 10987778A JP S5455174 A JPS5455174 A JP S5455174A
- Authority
- JP
- Japan
- Prior art keywords
- etching method
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US84008577A | 1977-10-06 | 1977-10-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5455174A true JPS5455174A (en) | 1979-05-02 |
JPS6158975B2 JPS6158975B2 (US06262066-20010717-C00424.png) | 1986-12-13 |
Family
ID=25281410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10987778A Granted JPS5455174A (en) | 1977-10-06 | 1978-09-08 | Etching method |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0001538B1 (US06262066-20010717-C00424.png) |
JP (1) | JPS5455174A (US06262066-20010717-C00424.png) |
DE (1) | DE2862150D1 (US06262066-20010717-C00424.png) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2727255A1 (de) * | 1976-06-21 | 1977-12-29 | Unilever Nv | Shampoo |
JPS5691446A (en) * | 1979-12-25 | 1981-07-24 | Seiko Epson Corp | Forming of element segregation region of semiconductor integrated circuit |
JPS5691447A (en) * | 1979-12-25 | 1981-07-24 | Seiko Epson Corp | Forming of element segregation region of semiconductor integrated circuit |
JPS5775429A (en) * | 1980-10-28 | 1982-05-12 | Toshiba Corp | Manufacture of semiconductor device |
JPS5799745A (en) * | 1980-10-20 | 1982-06-21 | Western Electric Co | Method of producing integrated circuit device |
JPS62228491A (ja) * | 1986-03-31 | 1987-10-07 | Canon Inc | ドライエツチングガス及びドライエツチング方法 |
JPH01133323A (ja) * | 1987-11-19 | 1989-05-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH03162602A (ja) * | 1989-08-16 | 1991-07-12 | Internatl Business Mach Corp <Ibm> | Afm/stmプロフィロメトリ用マイクロメカニカルセンサの製造方法 |
JP2010199364A (ja) * | 2009-02-26 | 2010-09-09 | Kyocera Corp | 反応性イオンエッチング装置と基板のエッチング方法 |
JP2017208387A (ja) * | 2016-05-16 | 2017-11-24 | 東京エレクトロン株式会社 | エッチング方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4324611A (en) * | 1980-06-26 | 1982-04-13 | Branson International Plasma Corporation | Process and gas mixture for etching silicon dioxide and silicon nitride |
DE3175576D1 (en) * | 1980-12-11 | 1986-12-11 | Toshiba Kk | Dry etching device and method |
DE68926855T2 (de) * | 1988-11-18 | 1997-02-13 | Shibaura Eng Works Ltd | Trockenätzverfahren |
DE10224137A1 (de) * | 2002-05-24 | 2003-12-04 | Infineon Technologies Ag | Ätzgas und Verfahren zum Trockenätzen |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5036075A (US06262066-20010717-C00424.png) * | 1973-05-17 | 1975-04-04 |
-
1978
- 1978-08-25 EP EP78430010A patent/EP0001538B1/fr not_active Expired
- 1978-08-25 DE DE7878430010T patent/DE2862150D1/de not_active Expired
- 1978-09-08 JP JP10987778A patent/JPS5455174A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5036075A (US06262066-20010717-C00424.png) * | 1973-05-17 | 1975-04-04 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2727255A1 (de) * | 1976-06-21 | 1977-12-29 | Unilever Nv | Shampoo |
JPS5691446A (en) * | 1979-12-25 | 1981-07-24 | Seiko Epson Corp | Forming of element segregation region of semiconductor integrated circuit |
JPS5691447A (en) * | 1979-12-25 | 1981-07-24 | Seiko Epson Corp | Forming of element segregation region of semiconductor integrated circuit |
JPS5799745A (en) * | 1980-10-20 | 1982-06-21 | Western Electric Co | Method of producing integrated circuit device |
JPS5775429A (en) * | 1980-10-28 | 1982-05-12 | Toshiba Corp | Manufacture of semiconductor device |
JPH0157495B2 (US06262066-20010717-C00424.png) * | 1980-10-28 | 1989-12-06 | Tokyo Shibaura Electric Co | |
JPS62228491A (ja) * | 1986-03-31 | 1987-10-07 | Canon Inc | ドライエツチングガス及びドライエツチング方法 |
JPH01133323A (ja) * | 1987-11-19 | 1989-05-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH03162602A (ja) * | 1989-08-16 | 1991-07-12 | Internatl Business Mach Corp <Ibm> | Afm/stmプロフィロメトリ用マイクロメカニカルセンサの製造方法 |
JP2010199364A (ja) * | 2009-02-26 | 2010-09-09 | Kyocera Corp | 反応性イオンエッチング装置と基板のエッチング方法 |
JP2017208387A (ja) * | 2016-05-16 | 2017-11-24 | 東京エレクトロン株式会社 | エッチング方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0001538A1 (fr) | 1979-04-18 |
JPS6158975B2 (US06262066-20010717-C00424.png) | 1986-12-13 |
DE2862150D1 (en) | 1983-02-17 |
EP0001538B1 (fr) | 1983-01-12 |
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