JPS5453578A - Bias circuit of avalanche photo diode - Google Patents

Bias circuit of avalanche photo diode

Info

Publication number
JPS5453578A
JPS5453578A JP11930477A JP11930477A JPS5453578A JP S5453578 A JPS5453578 A JP S5453578A JP 11930477 A JP11930477 A JP 11930477A JP 11930477 A JP11930477 A JP 11930477A JP S5453578 A JPS5453578 A JP S5453578A
Authority
JP
Japan
Prior art keywords
voltage
apds
power source
resistors
side electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11930477A
Other languages
Japanese (ja)
Inventor
Yoshio Ogushi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11930477A priority Critical patent/JPS5453578A/en
Publication of JPS5453578A publication Critical patent/JPS5453578A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

PURPOSE:To supply bias voltage to a plurality of APDs from one high voltage power source, by connecting a high voltage power source commonly to one-side electrodes of plural APDs, and providing variable resistors to change the resistance between the other electrodes and the ground. CONSTITUTION:The one-side electrodes of two APDs 1, 2 are coupled to a common potential, and is connected to a high voltage circuit 3. Between the other-side electrodes and the ground are furnished load resistors 5, 6 which are designed to pick up photo current as voltage. And this voltage is taken out through coupling capacitors 8, 7, and amplified in amplifier circuits 9, 10. From another power source 11, voltage is passed through two variable resistors 12, 13 and is applied to resistors 5, 6. In this circuit composition, by adjusting the variable resistors 12, 13, bias voltage may be supplied independently into APD 1, 2.
JP11930477A 1977-10-04 1977-10-04 Bias circuit of avalanche photo diode Pending JPS5453578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11930477A JPS5453578A (en) 1977-10-04 1977-10-04 Bias circuit of avalanche photo diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11930477A JPS5453578A (en) 1977-10-04 1977-10-04 Bias circuit of avalanche photo diode

Publications (1)

Publication Number Publication Date
JPS5453578A true JPS5453578A (en) 1979-04-26

Family

ID=14758100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11930477A Pending JPS5453578A (en) 1977-10-04 1977-10-04 Bias circuit of avalanche photo diode

Country Status (1)

Country Link
JP (1) JPS5453578A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02263123A (en) * 1989-04-04 1990-10-25 Sony Corp Light receiving circuit
US20190076932A1 (en) * 2017-09-14 2019-03-14 Spirit Aerosystems, Inc. Apparatus and method for minimizing elongation in drilled holes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02263123A (en) * 1989-04-04 1990-10-25 Sony Corp Light receiving circuit
US20190076932A1 (en) * 2017-09-14 2019-03-14 Spirit Aerosystems, Inc. Apparatus and method for minimizing elongation in drilled holes

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