JPS5452477A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5452477A
JPS5452477A JP11923977A JP11923977A JPS5452477A JP S5452477 A JPS5452477 A JP S5452477A JP 11923977 A JP11923977 A JP 11923977A JP 11923977 A JP11923977 A JP 11923977A JP S5452477 A JPS5452477 A JP S5452477A
Authority
JP
Japan
Prior art keywords
constitution
fets
capacity
forming
mutually
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11923977A
Other languages
Japanese (ja)
Inventor
Takeshi Tokuda
Mikio Kyomasu
Toshiyuki Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11923977A priority Critical patent/JPS5452477A/en
Publication of JPS5452477A publication Critical patent/JPS5452477A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the area of an element, and to improve its operating speed by forming mutually-adjacent gate electrodes of FETs while making the both overlap each other and by omitting the diffusion region between both FETs.
CONSTITUTION: In gate oxidized film 13, the 1st group of gate electrodes 14 and the 2nd group of gate electrodes 17 are arranged alternatively while being given overlap parts mutually, thereby forming FETs 1b, 2b... connected in series. In this constitution, diffusion region between mutually-adjacent FETs disappear, its electrostaitc capacity is eliminated, and the area needed for elements is also reduced. At the time of forming a n-type input CMOS logical gate in this constitution ,the whole capacity becomes 2nCp denoting the drain capacity for one parallel FET part by Cp and, consequently, is 2/(n+1) as much as a conventional one; and further, the constitution with the P-channel parallel connection part and N-channel series connection part decreases the capacity down to 5/(4n+1), so that the operating speed will improve
COPYRIGHT: (C)1979,JPO&Japio
JP11923977A 1977-10-03 1977-10-03 Semiconductor device Pending JPS5452477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11923977A JPS5452477A (en) 1977-10-03 1977-10-03 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11923977A JPS5452477A (en) 1977-10-03 1977-10-03 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5452477A true JPS5452477A (en) 1979-04-25

Family

ID=14756399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11923977A Pending JPS5452477A (en) 1977-10-03 1977-10-03 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5452477A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0375226A2 (en) * 1988-12-21 1990-06-27 Texas Instruments Incorporated An seu hardened memory cell
JPH02201964A (en) * 1989-01-30 1990-08-10 Sumitomo Metal Ind Ltd Mos type transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0375226A2 (en) * 1988-12-21 1990-06-27 Texas Instruments Incorporated An seu hardened memory cell
JPH02201964A (en) * 1989-01-30 1990-08-10 Sumitomo Metal Ind Ltd Mos type transistor

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