JPS5452477A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5452477A JPS5452477A JP11923977A JP11923977A JPS5452477A JP S5452477 A JPS5452477 A JP S5452477A JP 11923977 A JP11923977 A JP 11923977A JP 11923977 A JP11923977 A JP 11923977A JP S5452477 A JPS5452477 A JP S5452477A
- Authority
- JP
- Japan
- Prior art keywords
- constitution
- fets
- capacity
- forming
- mutually
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce the area of an element, and to improve its operating speed by forming mutually-adjacent gate electrodes of FETs while making the both overlap each other and by omitting the diffusion region between both FETs.
CONSTITUTION: In gate oxidized film 13, the 1st group of gate electrodes 14 and the 2nd group of gate electrodes 17 are arranged alternatively while being given overlap parts mutually, thereby forming FETs 1b, 2b... connected in series. In this constitution, diffusion region between mutually-adjacent FETs disappear, its electrostaitc capacity is eliminated, and the area needed for elements is also reduced. At the time of forming a n-type input CMOS logical gate in this constitution ,the whole capacity becomes 2nCp denoting the drain capacity for one parallel FET part by Cp and, consequently, is 2/(n+1) as much as a conventional one; and further, the constitution with the P-channel parallel connection part and N-channel series connection part decreases the capacity down to 5/(4n+1), so that the operating speed will improve
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11923977A JPS5452477A (en) | 1977-10-03 | 1977-10-03 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11923977A JPS5452477A (en) | 1977-10-03 | 1977-10-03 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5452477A true JPS5452477A (en) | 1979-04-25 |
Family
ID=14756399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11923977A Pending JPS5452477A (en) | 1977-10-03 | 1977-10-03 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5452477A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0375226A2 (en) * | 1988-12-21 | 1990-06-27 | Texas Instruments Incorporated | An seu hardened memory cell |
JPH02201964A (en) * | 1989-01-30 | 1990-08-10 | Sumitomo Metal Ind Ltd | Mos type transistor |
-
1977
- 1977-10-03 JP JP11923977A patent/JPS5452477A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0375226A2 (en) * | 1988-12-21 | 1990-06-27 | Texas Instruments Incorporated | An seu hardened memory cell |
JPH02201964A (en) * | 1989-01-30 | 1990-08-10 | Sumitomo Metal Ind Ltd | Mos type transistor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6445157A (en) | Semiconductor integrated circuit | |
JPS5676627A (en) | Oscillation circuit | |
JPS5452477A (en) | Semiconductor device | |
JPS53125753A (en) | Driving circuit | |
JPS5370768A (en) | Integrated circuit | |
JPS53136489A (en) | Mos semiconductor element of high dielectric strenght | |
JPS53105389A (en) | Manufacture for insulating gate type semiconductor integrated circuit | |
JPS57196627A (en) | Electronic circuit device | |
JPS5389685A (en) | Production of semiconductor memory element | |
JPS5725726A (en) | Synchronous decoder | |
JPS542682A (en) | Manufacture of mos-type integrated circuit | |
JPS57109427A (en) | Semiconductor integrated circuit device | |
JPS5486239A (en) | Semiconductor integrated circuit | |
JPS57166737A (en) | Logical circuit | |
JPS57154942A (en) | Cmos tristate circuit | |
JPS57199334A (en) | Semiconductor integrated circuit | |
JPS5323291A (en) | Voltage converter circuit | |
JPS57197930A (en) | Logical circuit | |
JPS5478069A (en) | Dual complementary mos transistor circuit | |
JPS52137271A (en) | Semiconductor device | |
JPS53118988A (en) | Integrated circuit device and its manufacture | |
JPS531412A (en) | Mixer circuit | |
JPS55104126A (en) | Phase comparison circuit | |
JPS5336454A (en) | Semiconductor integrated circuit | |
JPH01198812A (en) | Cmos output buffer |