Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP10775177ApriorityCriticalpatent/JPS5441680A/en
Publication of JPS5441680ApublicationCriticalpatent/JPS5441680A/en
PURPOSE: To make accurate the impurity concentratonn control in growing layer, by mixing HCl with suitable amount in the rection gas, in performing epitaxial growing.
COPYRIGHT: (C)1979,JPO&Japio
JP10775177A1977-09-091977-09-09Manufacture for semiconductor device
PendingJPS5441680A
(en)