JPS5433711B2 - - Google Patents

Info

Publication number
JPS5433711B2
JPS5433711B2 JP5125473A JP5125473A JPS5433711B2 JP S5433711 B2 JPS5433711 B2 JP S5433711B2 JP 5125473 A JP5125473 A JP 5125473A JP 5125473 A JP5125473 A JP 5125473A JP S5433711 B2 JPS5433711 B2 JP S5433711B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5125473A
Other languages
Japanese (ja)
Other versions
JPS5019367A (US20100223739A1-20100909-C00025.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US00237060A external-priority patent/US3808072A/en
Application filed filed Critical
Publication of JPS5019367A publication Critical patent/JPS5019367A/ja
Publication of JPS5433711B2 publication Critical patent/JPS5433711B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30612Etching of AIIIBV compounds
    • H01L21/30621Vapour phase etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02395Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02463Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02576N-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP5125473A 1972-03-22 1973-05-10 Expired JPS5433711B2 (US20100223739A1-20100909-C00025.png)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US00237060A US3808072A (en) 1972-03-22 1972-03-22 In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide
US24931172A 1972-05-01 1972-05-01

Publications (2)

Publication Number Publication Date
JPS5019367A JPS5019367A (US20100223739A1-20100909-C00025.png) 1975-02-28
JPS5433711B2 true JPS5433711B2 (US20100223739A1-20100909-C00025.png) 1979-10-22

Family

ID=26930348

Family Applications (2)

Application Number Title Priority Date Filing Date
JP3193373A Expired JPS5232831B2 (US20100223739A1-20100909-C00025.png) 1972-03-22 1973-03-22
JP5125473A Expired JPS5433711B2 (US20100223739A1-20100909-C00025.png) 1972-03-22 1973-05-10

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP3193373A Expired JPS5232831B2 (US20100223739A1-20100909-C00025.png) 1972-03-22 1973-03-22

Country Status (6)

Country Link
JP (2) JPS5232831B2 (US20100223739A1-20100909-C00025.png)
FR (2) FR2176998B1 (US20100223739A1-20100909-C00025.png)
GB (2) GB1425102A (US20100223739A1-20100909-C00025.png)
IT (2) IT982897B (US20100223739A1-20100909-C00025.png)
NL (2) NL162313C (US20100223739A1-20100909-C00025.png)
SE (2) SE375557B (US20100223739A1-20100909-C00025.png)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244582A (en) * 1975-10-06 1977-04-07 New Japan Radio Co Ltd Semiconductor device and process for production of the same
JPS55114620A (en) * 1979-02-22 1980-09-04 Yoshio Kaneda Driver's cab on tractor or the like
JPS56169331A (en) * 1980-05-30 1981-12-26 Nec Corp Vapor phase etching method for compound semiconductor
JPS5770810A (en) * 1980-10-17 1982-05-01 Lion Corp Cosmetic for hair
JPS60222410A (ja) * 1984-04-20 1985-11-07 Asahi Denka Kogyo Kk シヤンプ−組成物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916231A (US20100223739A1-20100909-C00025.png) * 1972-06-06 1974-02-13

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916231A (US20100223739A1-20100909-C00025.png) * 1972-06-06 1974-02-13

Also Published As

Publication number Publication date
DE2313768A1 (de) 1973-10-04
SE388972B (sv) 1976-10-18
FR2176998A1 (US20100223739A1-20100909-C00025.png) 1973-11-02
GB1425101A (en) 1976-02-18
SE375557B (US20100223739A1-20100909-C00025.png) 1975-04-21
NL162313C (nl) 1980-05-16
JPS5232831B2 (US20100223739A1-20100909-C00025.png) 1977-08-24
IT979892B (it) 1974-09-30
FR2176999B1 (US20100223739A1-20100909-C00025.png) 1978-03-03
NL160989C (nl) 1979-12-17
FR2176998B1 (US20100223739A1-20100909-C00025.png) 1976-11-05
FR2176999A1 (US20100223739A1-20100909-C00025.png) 1973-11-02
NL160989B (nl) 1979-07-16
JPS4948281A (US20100223739A1-20100909-C00025.png) 1974-05-10
NL162313B (nl) 1979-12-17
NL7303958A (US20100223739A1-20100909-C00025.png) 1973-09-25
DE2313768B2 (de) 1975-11-20
GB1425102A (en) 1976-02-18
NL7303954A (US20100223739A1-20100909-C00025.png) 1973-09-25
IT982897B (it) 1974-10-21
JPS5019367A (US20100223739A1-20100909-C00025.png) 1975-02-28

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