JPS5426676A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5426676A
JPS5426676A JP9193377A JP9193377A JPS5426676A JP S5426676 A JPS5426676 A JP S5426676A JP 9193377 A JP9193377 A JP 9193377A JP 9193377 A JP9193377 A JP 9193377A JP S5426676 A JPS5426676 A JP S5426676A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
sintering
silver
establish
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9193377A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6159547B2 (enrdf_load_stackoverflow
Inventor
Manabu Yoshida
Jun Fukuchi
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9193377A priority Critical patent/JPS5426676A/ja
Priority to AU38236/78A priority patent/AU509758B2/en
Priority to DE2833214A priority patent/DE2833214C2/de
Publication of JPS5426676A publication Critical patent/JPS5426676A/ja
Publication of JPS6159547B2 publication Critical patent/JPS6159547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP9193377A 1977-07-29 1977-07-29 Semiconductor device and its manufacture Granted JPS5426676A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9193377A JPS5426676A (en) 1977-07-29 1977-07-29 Semiconductor device and its manufacture
AU38236/78A AU509758B2 (en) 1977-07-29 1978-07-21 Ohmic electrode to semiconductor device
DE2833214A DE2833214C2 (de) 1977-07-29 1978-07-28 Verfahren zum Herstellen einer für eine Solarzelle bestimmten Elektrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9193377A JPS5426676A (en) 1977-07-29 1977-07-29 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS5426676A true JPS5426676A (en) 1979-02-28
JPS6159547B2 JPS6159547B2 (enrdf_load_stackoverflow) 1986-12-17

Family

ID=14040383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9193377A Granted JPS5426676A (en) 1977-07-29 1977-07-29 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5426676A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636172A (en) * 1979-08-31 1981-04-09 Du Pont Thick film conductor composition
JPS5911687A (ja) * 1982-07-12 1984-01-21 Mitsubishi Electric Corp 太陽電池
JP2006041105A (ja) * 2004-07-26 2006-02-09 Sharp Corp 太陽電池およびその製造方法
JP2016066800A (ja) * 2007-07-20 2016-04-28 アルファ・メタルズ・インコーポレイテッドAlpha Metals, Inc. 基板上に導体が配列された装置および導体を形成する方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141520A (ja) * 2000-10-31 2002-05-17 Kyocera Corp 太陽電池素子およびその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636172A (en) * 1979-08-31 1981-04-09 Du Pont Thick film conductor composition
JPS5911687A (ja) * 1982-07-12 1984-01-21 Mitsubishi Electric Corp 太陽電池
JP2006041105A (ja) * 2004-07-26 2006-02-09 Sharp Corp 太陽電池およびその製造方法
JP2016066800A (ja) * 2007-07-20 2016-04-28 アルファ・メタルズ・インコーポレイテッドAlpha Metals, Inc. 基板上に導体が配列された装置および導体を形成する方法

Also Published As

Publication number Publication date
JPS6159547B2 (enrdf_load_stackoverflow) 1986-12-17

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