JPS5425175A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPS5425175A
JPS5425175A JP9014677A JP9014677A JPS5425175A JP S5425175 A JPS5425175 A JP S5425175A JP 9014677 A JP9014677 A JP 9014677A JP 9014677 A JP9014677 A JP 9014677A JP S5425175 A JPS5425175 A JP S5425175A
Authority
JP
Japan
Prior art keywords
integrated circuit
circuit device
fet
ease
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9014677A
Other languages
English (en)
Japanese (ja)
Inventor
Terumoto Nonaka
Masahiko Hotta
Shin Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Gakki Co Ltd
Original Assignee
Nippon Gakki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Gakki Co Ltd filed Critical Nippon Gakki Co Ltd
Priority to JP9014677A priority Critical patent/JPS5425175A/ja
Priority to US05/925,624 priority patent/US4205334A/en
Priority to DE19782833068 priority patent/DE2833068A1/de
Publication of JPS5425175A publication Critical patent/JPS5425175A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP9014677A 1977-07-27 1977-07-27 Integrated circuit device Pending JPS5425175A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9014677A JPS5425175A (en) 1977-07-27 1977-07-27 Integrated circuit device
US05/925,624 US4205334A (en) 1977-07-27 1978-07-17 Integrated semiconductor device
DE19782833068 DE2833068A1 (de) 1977-07-27 1978-07-27 Integrierte halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9014677A JPS5425175A (en) 1977-07-27 1977-07-27 Integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5425175A true JPS5425175A (en) 1979-02-24

Family

ID=13990351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9014677A Pending JPS5425175A (en) 1977-07-27 1977-07-27 Integrated circuit device

Country Status (3)

Country Link
US (1) US4205334A (enrdf_load_stackoverflow)
JP (1) JPS5425175A (enrdf_load_stackoverflow)
DE (1) DE2833068A1 (enrdf_load_stackoverflow)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54145486A (en) * 1978-05-08 1979-11-13 Handotai Kenkyu Shinkokai Gaas semiconductor device
JPS5546548A (en) * 1978-09-28 1980-04-01 Semiconductor Res Found Electrostatic induction integrated circuit
US4362981A (en) * 1980-09-12 1982-12-07 Kabushiki Kaisha Daini Seikosha Driving circuit for a stepping motor
JPS57173978A (en) * 1981-04-21 1982-10-26 Nippon Gakki Seizo Kk Integrated circuit device
US4568957A (en) * 1984-01-16 1986-02-04 Mcdonnell Douglas Corporation GaAs Complementary enhancement mode junction field effect transistor structures and method of fabrication
US4661726A (en) * 1985-10-31 1987-04-28 Honeywell Inc. Utilizing a depletion mode FET operating in the triode region and a depletion mode FET operating in the saturation region
JPS63194368A (ja) * 1987-02-09 1988-08-11 Toshiba Corp 電界効果型トランジスタとその製造方法
TW287307B (enrdf_load_stackoverflow) * 1992-04-14 1996-10-01 Philips Electronics Nv
US6037618A (en) * 1998-02-17 2000-03-14 Linear Integrated Systems, Inc. Intergrated field effect transistor device for high power and voltage amplification of RF signals
DE102005002023B4 (de) * 2005-01-15 2007-08-16 Atmel Germany Gmbh Halbleiterstruktur mit vertikalem JFET
US8130023B2 (en) * 2009-11-23 2012-03-06 Northrop Grumman Systems Corporation System and method for providing symmetric, efficient bi-directional power flow and power conditioning
FR3045937A1 (fr) 2015-12-21 2017-06-23 St Microelectronics Crolles 2 Sas Procede de fabrication d'un transistor jfet au sein d'un circuit integre et circuit integre correspondant.
US10903371B2 (en) * 2016-01-07 2021-01-26 Lawrence Livermore National Security, Llc Three dimensional vertically structured MISFET/MESFET
US11018253B2 (en) 2016-01-07 2021-05-25 Lawrence Livermore National Security, Llc Three dimensional vertically structured electronic devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526076B1 (enrdf_load_stackoverflow) * 1971-04-28 1977-02-18
US4117587A (en) * 1973-11-30 1978-10-03 Matsushita Electronics Corporation Negative-resistance semiconductor device
JPH05124184A (ja) * 1991-10-31 1993-05-21 Canon Inc インクジエツト記録装置

Also Published As

Publication number Publication date
DE2833068C2 (enrdf_load_stackoverflow) 1989-08-24
DE2833068A1 (de) 1979-02-08
US4205334A (en) 1980-05-27

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