JPS5422176A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5422176A
JPS5422176A JP8711977A JP8711977A JPS5422176A JP S5422176 A JPS5422176 A JP S5422176A JP 8711977 A JP8711977 A JP 8711977A JP 8711977 A JP8711977 A JP 8711977A JP S5422176 A JPS5422176 A JP S5422176A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
fet
onto
feature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8711977A
Other languages
Japanese (ja)
Inventor
Shigeki Iwauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP8711977A priority Critical patent/JPS5422176A/en
Publication of JPS5422176A publication Critical patent/JPS5422176A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain complementary J-FET of a highly integrated degree, which can feature a high-speed operation in low power by providing both the vertical and horizontal FET's onto the same semiconductor substrate.
JP8711977A 1977-07-20 1977-07-20 Manufacture of semiconductor device Pending JPS5422176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8711977A JPS5422176A (en) 1977-07-20 1977-07-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8711977A JPS5422176A (en) 1977-07-20 1977-07-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5422176A true JPS5422176A (en) 1979-02-19

Family

ID=13906056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8711977A Pending JPS5422176A (en) 1977-07-20 1977-07-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5422176A (en)

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