JPS5416196A - Hetero junction avalanche photo diode - Google Patents
Hetero junction avalanche photo diodeInfo
- Publication number
- JPS5416196A JPS5416196A JP8131677A JP8131677A JPS5416196A JP S5416196 A JPS5416196 A JP S5416196A JP 8131677 A JP8131677 A JP 8131677A JP 8131677 A JP8131677 A JP 8131677A JP S5416196 A JPS5416196 A JP S5416196A
- Authority
- JP
- Japan
- Prior art keywords
- hetero junction
- photo diode
- avalanche photo
- junction avalanche
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000005842 heteroatom Chemical group 0.000 title abstract 2
- 230000001443 photoexcitation Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8131677A JPS5416196A (en) | 1977-07-06 | 1977-07-06 | Hetero junction avalanche photo diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8131677A JPS5416196A (en) | 1977-07-06 | 1977-07-06 | Hetero junction avalanche photo diode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5416196A true JPS5416196A (en) | 1979-02-06 |
JPS6157716B2 JPS6157716B2 (ja) | 1986-12-08 |
Family
ID=13742981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8131677A Granted JPS5416196A (en) | 1977-07-06 | 1977-07-06 | Hetero junction avalanche photo diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5416196A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5664477A (en) * | 1979-10-30 | 1981-06-01 | Nec Corp | Hetero-junction avalanche-photodiode |
JPS577978A (en) * | 1980-06-18 | 1982-01-16 | Nippon Telegr & Teleph Corp <Ntt> | Opto-electronic switch |
JPS5792878A (en) * | 1980-10-09 | 1982-06-09 | Western Electric Co | Semiconductor photodiode |
US9368318B2 (en) | 2011-01-19 | 2016-06-14 | Plansee Se | Rotary X-ray anode |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3889284A (en) * | 1974-01-15 | 1975-06-10 | Us Army | Avalanche photodiode with varying bandgap |
JPS5316593A (en) * | 1976-07-30 | 1978-02-15 | Hitachi Ltd | Semiconductor photo detector |
JPS5397386A (en) * | 1977-02-07 | 1978-08-25 | Hitachi Ltd | Avalanche photo diode |
-
1977
- 1977-07-06 JP JP8131677A patent/JPS5416196A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3889284A (en) * | 1974-01-15 | 1975-06-10 | Us Army | Avalanche photodiode with varying bandgap |
JPS5316593A (en) * | 1976-07-30 | 1978-02-15 | Hitachi Ltd | Semiconductor photo detector |
JPS5397386A (en) * | 1977-02-07 | 1978-08-25 | Hitachi Ltd | Avalanche photo diode |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5664477A (en) * | 1979-10-30 | 1981-06-01 | Nec Corp | Hetero-junction avalanche-photodiode |
JPS577978A (en) * | 1980-06-18 | 1982-01-16 | Nippon Telegr & Teleph Corp <Ntt> | Opto-electronic switch |
JPH0353789B2 (ja) * | 1980-06-18 | 1991-08-16 | ||
JPS5792878A (en) * | 1980-10-09 | 1982-06-09 | Western Electric Co | Semiconductor photodiode |
US9368318B2 (en) | 2011-01-19 | 2016-06-14 | Plansee Se | Rotary X-ray anode |
US9767983B2 (en) | 2011-01-19 | 2017-09-19 | Plansee Se | Rotary X-ray anode and production method |
Also Published As
Publication number | Publication date |
---|---|
JPS6157716B2 (ja) | 1986-12-08 |
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