JPS54146969A - Method of fabricating high resolution fine line lithographic structure - Google Patents
Method of fabricating high resolution fine line lithographic structureInfo
- Publication number
- JPS54146969A JPS54146969A JP5466479A JP5466479A JPS54146969A JP S54146969 A JPS54146969 A JP S54146969A JP 5466479 A JP5466479 A JP 5466479A JP 5466479 A JP5466479 A JP 5466479A JP S54146969 A JPS54146969 A JP S54146969A
- Authority
- JP
- Japan
- Prior art keywords
- high resolution
- fine line
- fabricating high
- lithographic structure
- resolution fine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
- H01J2237/31757—Lithography using particular beams or near-field effects, e.g. STM-like techniques hybrid, i.e. charged particles and light, X-rays, plasma
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US90409078A | 1978-05-08 | 1978-05-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54146969A true JPS54146969A (en) | 1979-11-16 |
JPS588130B2 JPS588130B2 (ja) | 1983-02-14 |
Family
ID=25418532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54054664A Expired JPS588130B2 (ja) | 1978-05-08 | 1979-05-01 | 高分解能の微細ラインリソグラフイ構造を作るための方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS588130B2 (ja) |
DE (1) | DE2918535A1 (ja) |
FR (1) | FR2425661A1 (ja) |
GB (1) | GB2020849B (ja) |
IT (1) | IT1117161B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58115821A (ja) * | 1981-12-28 | 1983-07-09 | Fujitsu Ltd | X線露光装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1213563A (fr) * | 1957-09-04 | 1960-04-01 | Thomson Houston Comp Francaise | Perfectionnements aux tubes électroniques |
FR39852E (fr) * | 1972-06-30 | 1932-03-24 | Ig Farbenindustrie Ag | Procédé de production de colorants solides pour cuve |
US3947687A (en) * | 1974-10-23 | 1976-03-30 | The United States Of America As Represented By The Secretary Of The Air Force | Collimated x-ray source for x-ray lithographic system |
DE2547079C3 (de) * | 1975-10-17 | 1979-12-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Korpuskularbestrahlung eines Präparats |
-
1979
- 1979-05-01 JP JP54054664A patent/JPS588130B2/ja not_active Expired
- 1979-05-07 FR FR7911488A patent/FR2425661A1/fr not_active Withdrawn
- 1979-05-07 IT IT48958/79A patent/IT1117161B/it active
- 1979-05-08 GB GB7915829A patent/GB2020849B/en not_active Expired
- 1979-05-08 DE DE19792918535 patent/DE2918535A1/de not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58115821A (ja) * | 1981-12-28 | 1983-07-09 | Fujitsu Ltd | X線露光装置 |
Also Published As
Publication number | Publication date |
---|---|
FR2425661A1 (fr) | 1979-12-07 |
DE2918535A1 (de) | 1979-11-15 |
IT7948958A0 (it) | 1979-05-07 |
IT1117161B (it) | 1986-02-17 |
GB2020849A (en) | 1979-11-21 |
JPS588130B2 (ja) | 1983-02-14 |
GB2020849B (en) | 1982-04-28 |
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