FR2425661A1 - Procede de formation lithographique de microcircuits par masquage a transmission d'electrons en utilisant un masque transparent aux electrons - Google Patents

Procede de formation lithographique de microcircuits par masquage a transmission d'electrons en utilisant un masque transparent aux electrons

Info

Publication number
FR2425661A1
FR2425661A1 FR7911488A FR7911488A FR2425661A1 FR 2425661 A1 FR2425661 A1 FR 2425661A1 FR 7911488 A FR7911488 A FR 7911488A FR 7911488 A FR7911488 A FR 7911488A FR 2425661 A1 FR2425661 A1 FR 2425661A1
Authority
FR
France
Prior art keywords
electron
microcircuits
masking
transparent mask
lithographic formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7911488A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of FR2425661A1 publication Critical patent/FR2425661A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31757—Lithography using particular beams or near-field effects, e.g. STM-like techniques hybrid, i.e. charged particles and light, X-rays, plasma

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Beam Exposure (AREA)

Abstract

L'INVENTION CONCERNE UN PROCEDE DE FORMATION DE STRUCTURES LITHOGRAPHIQUES A TRAITS FINS ET DE RESOLUTION ELEVEE. ELLE SE RAPPORTE A UN PROCEDE SELON LEQUEL UNE SOURCE D'ELECTRONS PENETRANTS IRRADIE UN CACHE QUI TRANSMET CES ELECTRONS SUIVANT UN DESSIN, SI BIEN QUE CE DESSIN EST REPRODUIT DANS UN DISPOSITIF UTILISATEUR TEL QU'UNE PLAQUETTE REVETUE D'UNE RESERVE. LA SOURCE ELECTRONIQUE PEUT FORMER UN FAISCEAU D'ELECTRONS DE GRANDE SURFACE. APPLICATION A LA FABRICATION DES CACHES ET DES MICROCIRCUITS ELECTRONIQUES.
FR7911488A 1978-05-08 1979-05-07 Procede de formation lithographique de microcircuits par masquage a transmission d'electrons en utilisant un masque transparent aux electrons Withdrawn FR2425661A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US90409078A 1978-05-08 1978-05-08

Publications (1)

Publication Number Publication Date
FR2425661A1 true FR2425661A1 (fr) 1979-12-07

Family

ID=25418532

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7911488A Withdrawn FR2425661A1 (fr) 1978-05-08 1979-05-07 Procede de formation lithographique de microcircuits par masquage a transmission d'electrons en utilisant un masque transparent aux electrons

Country Status (5)

Country Link
JP (1) JPS588130B2 (fr)
DE (1) DE2918535A1 (fr)
FR (1) FR2425661A1 (fr)
GB (1) GB2020849B (fr)
IT (1) IT1117161B (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115821A (ja) * 1981-12-28 1983-07-09 Fujitsu Ltd Ｘ線露光装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1213563A (fr) * 1957-09-04 1960-04-01 Thomson Houston Comp Francaise Perfectionnements aux tubes électroniques
FR2191263A1 (fr) * 1972-06-30 1974-02-01 Ibm
US3947687A (en) * 1974-10-23 1976-03-30 The United States Of America As Represented By The Secretary Of The Air Force Collimated x-ray source for x-ray lithographic system

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2547079C3 (de) * 1975-10-17 1979-12-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Korpuskularbestrahlung eines Präparats

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1213563A (fr) * 1957-09-04 1960-04-01 Thomson Houston Comp Francaise Perfectionnements aux tubes électroniques
FR2191263A1 (fr) * 1972-06-30 1974-02-01 Ibm
US3947687A (en) * 1974-10-23 1976-03-30 The United States Of America As Represented By The Secretary Of The Air Force Collimated x-ray source for x-ray lithographic system

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *

Also Published As

Publication number Publication date
IT7948958A0 (it) 1979-05-07
GB2020849A (en) 1979-11-21
JPS54146969A (en) 1979-11-16
IT1117161B (it) 1986-02-17
GB2020849B (en) 1982-04-28
DE2918535A1 (de) 1979-11-15
JPS588130B2 (ja) 1983-02-14

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Legal Events

Date Code Title Description
ST Notification of lapse