JPS54145199A - Gas sensitive element - Google Patents

Info

Publication number

JPS54145199A

JPS54145199A JP5237078A JP5237078A JPS54145199A JP S54145199 A JPS54145199 A JP S54145199A JP 5237078 A JP5237078 A JP 5237078A JP 5237078 A JP5237078 A JP 5237078A JP S54145199 A JPS54145199 A JP S54145199A

Authority

JP

Japan

Prior art keywords

gas

gas sensitive

catalyst layer

sensitive body

sensitive

Prior art date

1978-05-02

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Links

• Espacenet
• Global Dossier
• Discuss

• 239000007789 gas Substances 0.000 abstract 8
• NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 abstract 4
• 239000003054 catalyst Substances 0.000 abstract 3
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
• 239000001282 iso-butane Substances 0.000 abstract 2
• 239000000758 substrate Substances 0.000 abstract 2
• XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
• 229910001887 tin oxide Inorganic materials 0.000 abstract 2
• 230000032683 aging Effects 0.000 abstract 1
• PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
• 238000009413 insulation Methods 0.000 abstract 1
• 238000004519 manufacturing process Methods 0.000 abstract 1
• 230000002093 peripheral effect Effects 0.000 abstract 1
• 239000004065 semiconductor Substances 0.000 abstract 1
• 230000035945 sensitivity Effects 0.000 abstract 1
• 239000000377 silicon dioxide Substances 0.000 abstract 1