JPS5412679A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5412679A
JPS5412679A JP7870277A JP7870277A JPS5412679A JP S5412679 A JPS5412679 A JP S5412679A JP 7870277 A JP7870277 A JP 7870277A JP 7870277 A JP7870277 A JP 7870277A JP S5412679 A JPS5412679 A JP S5412679A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacture
carrying
produce
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7870277A
Other languages
Japanese (ja)
Inventor
Takeshi Ouchiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP7870277A priority Critical patent/JPS5412679A/en
Publication of JPS5412679A publication Critical patent/JPS5412679A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To produce a highly dielectric-strength semiconductor device by increasing gradually the size of the hole drilled to the protective film and carrying out mesa etching.
JP7870277A 1977-06-30 1977-06-30 Manufacture of semiconductor device Pending JPS5412679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7870277A JPS5412679A (en) 1977-06-30 1977-06-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7870277A JPS5412679A (en) 1977-06-30 1977-06-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5412679A true JPS5412679A (en) 1979-01-30

Family

ID=13669191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7870277A Pending JPS5412679A (en) 1977-06-30 1977-06-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5412679A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022168959A1 (en) 2021-02-05 2022-08-11 国立大学法人神戸大学 γδ T CELLS DERIVED FROM INDUCED PLURIPOTENT STEM CELLS, AND PRODUCTION METHOD THEREFOR

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026477A (en) * 1973-07-09 1975-03-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5026477A (en) * 1973-07-09 1975-03-19

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022168959A1 (en) 2021-02-05 2022-08-11 国立大学法人神戸大学 γδ T CELLS DERIVED FROM INDUCED PLURIPOTENT STEM CELLS, AND PRODUCTION METHOD THEREFOR

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