JPS54125982A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54125982A
JPS54125982A JP3372578A JP3372578A JPS54125982A JP S54125982 A JPS54125982 A JP S54125982A JP 3372578 A JP3372578 A JP 3372578A JP 3372578 A JP3372578 A JP 3372578A JP S54125982 A JPS54125982 A JP S54125982A
Authority
JP
Japan
Prior art keywords
film
etching
mask
type
cvdsio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3372578A
Other languages
Japanese (ja)
Inventor
Kuniyuki Hamano
Kazuo Imai
Yutaka Yoriume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3372578A priority Critical patent/JPS54125982A/en
Publication of JPS54125982A publication Critical patent/JPS54125982A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)

Abstract

PURPOSE: To ensure an effective etching of the Si3N4 film with the high-temperature phosphoric acid by piling CVDSiO2 on the metal film and then using the mask covering over the cavity in the metal film.
CONSTITUTION: Si3N4202 and Mo203 are laminated on P-type Si substrate 201, and then CVDSiO2204 is formed. A selective etching is given to film 204, and Mo mask 206 is formed with mask 205 to give etching to Si3N4. With this method, minute hole 207 and 207' of film 206 are blocked with film 205, and so no touch is given to Si3N4 through the hole when Si3N4 is etched via the high-temperature phosphoric acid. Thus, the stop-type etching is never caused. After this, substrate 201 is changed porous selectively in the hydrofluoric acid, and P-type layer 208 and 208' are formed by ion injection. Then oxide film 209 and 209' are formed through oxidation to obtain N-type layer 210. In such constitution, the pn junction features good characteristics with the reduced leak current.
COPYRIGHT: (C)1979,JPO&Japio
JP3372578A 1978-03-23 1978-03-23 Manufacture of semiconductor device Pending JPS54125982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3372578A JPS54125982A (en) 1978-03-23 1978-03-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3372578A JPS54125982A (en) 1978-03-23 1978-03-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54125982A true JPS54125982A (en) 1979-09-29

Family

ID=12394366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3372578A Pending JPS54125982A (en) 1978-03-23 1978-03-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54125982A (en)

Similar Documents

Publication Publication Date Title
JPS5693341A (en) Manufacture of bipolar ic
JPS55128869A (en) Semiconductor device and method of fabricating the same
JPS54100273A (en) Memory circuit and variable resistance element
US4025364A (en) Process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases
JPS55160444A (en) Manufacture of semiconductor device
JPS5673446A (en) Manufacture of semiconductor device
JPS54125982A (en) Manufacture of semiconductor device
JPS5541737A (en) Preparation of semiconductor device
JPS54125983A (en) Manufacture of semiconductor device
JPS57134956A (en) Manufacture of semiconductor integrated circuit
JPS55153344A (en) Manufacture of semiconductor device
JPS55108766A (en) Semiconductor device and manufacture of the same
JPS553686A (en) Preparation of semiconductor device
JPS5575234A (en) Semiconductor device
JPS54158889A (en) Manufacture of semiconductor device
JPS55105369A (en) Manufacture of semiconductor device
JPS57199234A (en) Semiconductor integrated circuit device and manufacture thereof
JPS6489364A (en) Manufacture of bipolar semiconductor integrated circuit device
JPS54158167A (en) Manufacture of semiconductor device
JPS56152262A (en) Manufacture of semiconductor integrated circuit device
JPS5640256A (en) Manufacture of semiconductor device
JPS55132053A (en) Manufacture of semiconductor device
JPS5731153A (en) Manufacture of semiconductor device
JPS56101757A (en) Manufacture of semiconductor device
JPS5588337A (en) Manufacture of semiconductor device