JPS54125982A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54125982A JPS54125982A JP3372578A JP3372578A JPS54125982A JP S54125982 A JPS54125982 A JP S54125982A JP 3372578 A JP3372578 A JP 3372578A JP 3372578 A JP3372578 A JP 3372578A JP S54125982 A JPS54125982 A JP S54125982A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- mask
- type
- cvdsio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To ensure an effective etching of the Si3N4 film with the high-temperature phosphoric acid by piling CVDSiO2 on the metal film and then using the mask covering over the cavity in the metal film.
CONSTITUTION: Si3N4202 and Mo203 are laminated on P-type Si substrate 201, and then CVDSiO2204 is formed. A selective etching is given to film 204, and Mo mask 206 is formed with mask 205 to give etching to Si3N4. With this method, minute hole 207 and 207' of film 206 are blocked with film 205, and so no touch is given to Si3N4 through the hole when Si3N4 is etched via the high-temperature phosphoric acid. Thus, the stop-type etching is never caused. After this, substrate 201 is changed porous selectively in the hydrofluoric acid, and P-type layer 208 and 208' are formed by ion injection. Then oxide film 209 and 209' are formed through oxidation to obtain N-type layer 210. In such constitution, the pn junction features good characteristics with the reduced leak current.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3372578A JPS54125982A (en) | 1978-03-23 | 1978-03-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3372578A JPS54125982A (en) | 1978-03-23 | 1978-03-23 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54125982A true JPS54125982A (en) | 1979-09-29 |
Family
ID=12394366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3372578A Pending JPS54125982A (en) | 1978-03-23 | 1978-03-23 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54125982A (en) |
-
1978
- 1978-03-23 JP JP3372578A patent/JPS54125982A/en active Pending
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