JPS54112636A - Electrostatic latent image transferring method - Google Patents

Electrostatic latent image transferring method

Info

Publication number
JPS54112636A
JPS54112636A JP2030378A JP2030378A JPS54112636A JP S54112636 A JPS54112636 A JP S54112636A JP 2030378 A JP2030378 A JP 2030378A JP 2030378 A JP2030378 A JP 2030378A JP S54112636 A JPS54112636 A JP S54112636A
Authority
JP
Japan
Prior art keywords
dielectric
photoreceptor
low resistance
resistance layer
latent image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2030378A
Other languages
Japanese (ja)
Inventor
Nobuhiro Ozaki
Masayuki Kuniyoshi
Takanobu Ishido
Shuichiro Kaneko
Yasukuni Komata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Minolta Co Ltd
Original Assignee
Minolta Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minolta Co Ltd filed Critical Minolta Co Ltd
Priority to JP2030378A priority Critical patent/JPS54112636A/en
Publication of JPS54112636A publication Critical patent/JPS54112636A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent disruptive transfer by providing a low resistance layer at least in one side of a photoreceptor or a dielectric in a twice transfer method and by transferring a static latent image without causing any surface contact between the photoreceptor and the dielectric.
CONSTITUTION: The low resistance layer to be provided at least in one side of a photoreceptor or a dielectric is formed between the conductive substrate and the photoconductive layer of the photoreceptor or between the conductive substrate of the dielectric and its dielectric layer, and the low resistance layer has a volume resistivity of about 107 to 1010 ohm. cm and an electrostatic capacity of about 30 to 1500 PF/cm2. Aluminum oxide prepared by anodic oxidation, zinc oxide, titanium oxide, and the like mixed with acrylic resins are suitable for this low resistance layer. The air gap between the photoreceptor surface and the dielectric surface has a space of about 8 to 60 μ, preferably, 10 to 40 μ, permitting disruptive transfer in a twice transfer method to effectively be prevented.
COPYRIGHT: (C)1979,JPO&Japio
JP2030378A 1978-02-22 1978-02-22 Electrostatic latent image transferring method Pending JPS54112636A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2030378A JPS54112636A (en) 1978-02-22 1978-02-22 Electrostatic latent image transferring method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2030378A JPS54112636A (en) 1978-02-22 1978-02-22 Electrostatic latent image transferring method

Publications (1)

Publication Number Publication Date
JPS54112636A true JPS54112636A (en) 1979-09-03

Family

ID=12023375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2030378A Pending JPS54112636A (en) 1978-02-22 1978-02-22 Electrostatic latent image transferring method

Country Status (1)

Country Link
JP (1) JPS54112636A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137865A (en) * 1982-02-03 1983-08-16 ミネソタ・マイニング・アンド・マニユフアクチユアリング・コンパニ− Charge transfer image formation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137865A (en) * 1982-02-03 1983-08-16 ミネソタ・マイニング・アンド・マニユフアクチユアリング・コンパニ− Charge transfer image formation
JPH0345834B2 (en) * 1982-02-03 1991-07-12 Minnesota Mining & Mfg

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