Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Hitachi Ltd
Original Assignee
Hitachi Ltd
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Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP1427977ApriorityCriticalpatent/JPS5399878A/en
Publication of JPS5399878ApublicationCriticalpatent/JPS5399878A/en
PURPOSE: By supplying impurities or forming a defect generating a deep level inside the element, carriers are compensated to make the inter-gate short part generated due to auto-doping or lateral diffusion into a high resistance again or to invert its conduction type, thereby recovering the gate function which was lost once.
COPYRIGHT: (C)1978,JPO&Japio
JP1427977A1977-02-141977-02-14Manufacture of semiconductor device
PendingJPS5399878A
(en)