JPS5381091A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5381091A
JPS5381091A JP15834676A JP15834676A JPS5381091A JP S5381091 A JPS5381091 A JP S5381091A JP 15834676 A JP15834676 A JP 15834676A JP 15834676 A JP15834676 A JP 15834676A JP S5381091 A JPS5381091 A JP S5381091A
Authority
JP
Japan
Prior art keywords
semiconductor device
transitor
injector
inverter
lengths
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15834676A
Other languages
English (en)
Japanese (ja)
Other versions
JPS567300B2 (show.php
Inventor
Koichi Kanzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15834676A priority Critical patent/JPS5381091A/ja
Publication of JPS5381091A publication Critical patent/JPS5381091A/ja
Publication of JPS567300B2 publication Critical patent/JPS567300B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
JP15834676A 1976-12-27 1976-12-27 Semiconductor device Granted JPS5381091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15834676A JPS5381091A (en) 1976-12-27 1976-12-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15834676A JPS5381091A (en) 1976-12-27 1976-12-27 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5381091A true JPS5381091A (en) 1978-07-18
JPS567300B2 JPS567300B2 (show.php) 1981-02-17

Family

ID=15669626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15834676A Granted JPS5381091A (en) 1976-12-27 1976-12-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5381091A (show.php)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4935030A (show.php) * 1972-08-03 1974-04-01

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4935030A (show.php) * 1972-08-03 1974-04-01

Also Published As

Publication number Publication date
JPS567300B2 (show.php) 1981-02-17

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