JPS52141588A - Semiconductor device and its process - Google Patents
Semiconductor device and its processInfo
- Publication number
- JPS52141588A JPS52141588A JP5865176A JP5865176A JPS52141588A JP S52141588 A JPS52141588 A JP S52141588A JP 5865176 A JP5865176 A JP 5865176A JP 5865176 A JP5865176 A JP 5865176A JP S52141588 A JPS52141588 A JP S52141588A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- emitter
- transistor
- interface
- reduce
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce the propagation delay time of I<2>L by forming the emitter side of the I<2>L npn transistor as a high density impurity area at the interface between the emitter and base of the transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5865176A JPS52141588A (en) | 1976-05-20 | 1976-05-20 | Semiconductor device and its process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5865176A JPS52141588A (en) | 1976-05-20 | 1976-05-20 | Semiconductor device and its process |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52141588A true JPS52141588A (en) | 1977-11-25 |
JPS5615585B2 JPS5615585B2 (en) | 1981-04-10 |
Family
ID=13090476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5865176A Granted JPS52141588A (en) | 1976-05-20 | 1976-05-20 | Semiconductor device and its process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52141588A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5173886A (en) * | 1974-12-23 | 1976-06-26 | Tokyo Shibaura Electric Co | Handotaisochitosono seizohoho |
-
1976
- 1976-05-20 JP JP5865176A patent/JPS52141588A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5173886A (en) * | 1974-12-23 | 1976-06-26 | Tokyo Shibaura Electric Co | Handotaisochitosono seizohoho |
Also Published As
Publication number | Publication date |
---|---|
JPS5615585B2 (en) | 1981-04-10 |
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