JPS5366182A - Vertical junction type field effect transistor - Google Patents

Vertical junction type field effect transistor

Info

Publication number
JPS5366182A
JPS5366182A JP14190476A JP14190476A JPS5366182A JP S5366182 A JPS5366182 A JP S5366182A JP 14190476 A JP14190476 A JP 14190476A JP 14190476 A JP14190476 A JP 14190476A JP S5366182 A JPS5366182 A JP S5366182A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
junction type
vertical junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14190476A
Other languages
Japanese (ja)
Inventor
Goro Mitarai
Takayuki Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14190476A priority Critical patent/JPS5366182A/en
Publication of JPS5366182A publication Critical patent/JPS5366182A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To increase dielectric strength and reliability by encircling the mesh-or stripe form buried gate layers of a vertical J - FET with guard ring layers.
COPYRIGHT: (C)1978,JPO&Japio
JP14190476A 1976-11-25 1976-11-25 Vertical junction type field effect transistor Pending JPS5366182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14190476A JPS5366182A (en) 1976-11-25 1976-11-25 Vertical junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14190476A JPS5366182A (en) 1976-11-25 1976-11-25 Vertical junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5366182A true JPS5366182A (en) 1978-06-13

Family

ID=15302857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14190476A Pending JPS5366182A (en) 1976-11-25 1976-11-25 Vertical junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5366182A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001244479A (en) * 2000-02-29 2001-09-07 Tokin Corp Semiconductor device and manufacturing method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001244479A (en) * 2000-02-29 2001-09-07 Tokin Corp Semiconductor device and manufacturing method therefor

Similar Documents

Publication Publication Date Title
JPS52105784A (en) Mios type memory unit
JPS5366182A (en) Vertical junction type field effect transistor
JPS534382A (en) High frequency illuminator
JPS5350684A (en) Vertical junction type field effect transistor
JPS51114069A (en) Semiconductor device
JPS52128063A (en) Manufacture of semiconductor device
JPS52129380A (en) Semiconductor device
JPS5228868A (en) Semiconductor device
JPS52129186A (en) Escalator
JPS5232686A (en) Semiconductor composite device
JPS5427377A (en) Semiconductor integrated circuit device
JPS52116080A (en) Transistor
JPS5376663A (en) Semiconductor device
JPS528787A (en) Semiconductor device process
JPS5379390A (en) Photo thyristor
JPS543477A (en) Manufacture of schottky diode
JPS5374383A (en) Manufacture of compound semiconductor device
JPS5353973A (en) Semiconductor device
JPS5310841A (en) Ground-fault detector
JPS5353255A (en) Manufacture of semiconductor device
JPS536583A (en) Varactor element
JPS51118965A (en) Insulation film of semiconductor device
JPS52126167A (en) Formation of electrode for semiconductor device
JPS5285484A (en) Mis type semiconductor device
JPS5345969A (en) Schottky barrier semiconductor device