JPS536580A - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
JPS536580A
JPS536580A JP8154176A JP8154176A JPS536580A JP S536580 A JPS536580 A JP S536580A JP 8154176 A JP8154176 A JP 8154176A JP 8154176 A JP8154176 A JP 8154176A JP S536580 A JPS536580 A JP S536580A
Authority
JP
Japan
Prior art keywords
integrated circuit
doping
impurity
opration
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8154176A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6135707B2 (enExample
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8154176A priority Critical patent/JPS536580A/ja
Publication of JPS536580A publication Critical patent/JPS536580A/ja
Publication of JPS6135707B2 publication Critical patent/JPS6135707B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP8154176A 1976-07-08 1976-07-08 Integrated circuit Granted JPS536580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8154176A JPS536580A (en) 1976-07-08 1976-07-08 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8154176A JPS536580A (en) 1976-07-08 1976-07-08 Integrated circuit

Publications (2)

Publication Number Publication Date
JPS536580A true JPS536580A (en) 1978-01-21
JPS6135707B2 JPS6135707B2 (enExample) 1986-08-14

Family

ID=13749148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8154176A Granted JPS536580A (en) 1976-07-08 1976-07-08 Integrated circuit

Country Status (1)

Country Link
JP (1) JPS536580A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111786A (en) * 1978-02-21 1979-09-01 Nec Corp Manufacture for complementary silicon gate mos field effect semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111786A (en) * 1978-02-21 1979-09-01 Nec Corp Manufacture for complementary silicon gate mos field effect semiconductor device

Also Published As

Publication number Publication date
JPS6135707B2 (enExample) 1986-08-14

Similar Documents

Publication Publication Date Title
JPS5375828A (en) Semiconductor circuit
JPS51115775A (en) Semiconductor apparatus
JPS536580A (en) Integrated circuit
JPS5370768A (en) Integrated circuit
JPS5336656A (en) Current mirror circuit
JPS5211872A (en) Semiconductor device
JPS5252370A (en) Fabrication of glass-sealed semiconductor device
JPS52112754A (en) Mos transistor constant-voltage circuit
JPS52153383A (en) Preparation of semiconductor device
JPS533071A (en) Semiconductor device
JPS5438777A (en) Semiconductor device
JPS5323579A (en) Production of semiconductor device
JPS5424574A (en) Manufacture for semiconductor device
JPS5384690A (en) Field effect transistor
JPS5379390A (en) Photo thyristor
JPS5368082A (en) Semiconductor integrated circuit
JPS5216978A (en) Semiconductor
JPS5270761A (en) Semiconductor device
JPS5378781A (en) Mos type integrated circuit
JPS51132985A (en) Semiconductor device
JPS5230386A (en) Semiconductor device with high brekdown voltage
JPS51141583A (en) Method for producing an electrode for use semiconductor units
JPS52113174A (en) Mos type semiconductor device
JPS5211779A (en) Multipellet type semiconductor device and its manufacturing method
JPS53123075A (en) Group iii-v compound semiconductor device