JPS5364682A - Chemical evaporation method and apparatus - Google Patents

Chemical evaporation method and apparatus

Info

Publication number
JPS5364682A
JPS5364682A JP13882777A JP13882777A JPS5364682A JP S5364682 A JPS5364682 A JP S5364682A JP 13882777 A JP13882777 A JP 13882777A JP 13882777 A JP13882777 A JP 13882777A JP S5364682 A JPS5364682 A JP S5364682A
Authority
JP
Japan
Prior art keywords
evaporation method
chemical evaporation
chemical
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13882777A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5541297B2 (enExample
Inventor
Shinisa Ban Urajimiru
Rii Girubaato Suchiibun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS5364682A publication Critical patent/JPS5364682A/ja
Publication of JPS5541297B2 publication Critical patent/JPS5541297B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45506—Turbulent flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP13882777A 1976-11-19 1977-11-17 Chemical evaporation method and apparatus Granted JPS5364682A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/743,317 US4062318A (en) 1976-11-19 1976-11-19 Apparatus for chemical vapor deposition

Publications (2)

Publication Number Publication Date
JPS5364682A true JPS5364682A (en) 1978-06-09
JPS5541297B2 JPS5541297B2 (enExample) 1980-10-23

Family

ID=24988331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13882777A Granted JPS5364682A (en) 1976-11-19 1977-11-17 Chemical evaporation method and apparatus

Country Status (6)

Country Link
US (2) US4062318A (enExample)
JP (1) JPS5364682A (enExample)
DE (1) DE2750882A1 (enExample)
GB (1) GB1560982A (enExample)
IN (1) IN146060B (enExample)
SE (1) SE7711884L (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691417A (en) * 1979-12-26 1981-07-24 Fujitsu Ltd Heating treatment device for wafer
JPS61136676A (ja) * 1984-12-07 1986-06-24 Sumitomo Metal Ind Ltd 気相成長装置
JPS61191015A (ja) * 1985-02-20 1986-08-25 Hitachi Ltd 半導体の気相成長方法及びその装置

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US4265991A (en) * 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
DE2813180C2 (de) * 1978-03-25 1985-12-19 Leybold-Heraeus GmbH, 5000 Köln Vakuumbeschichtungsanlage zum allseitigen Beschichten von Substraten durch Rotation der Substrate im Materialstrom
US4220116A (en) * 1978-10-30 1980-09-02 Burroughs Corporation Reactant gas flow structure for a low pressure chemical vapor deposition system
US4232063A (en) * 1978-11-14 1980-11-04 Applied Materials, Inc. Chemical vapor deposition reactor and process
JPS55118631A (en) * 1979-03-07 1980-09-11 Fujitsu Ltd Diffusion furnace for treatment of semiconductor wafer
JPS55158623A (en) * 1979-05-29 1980-12-10 Hitachi Ltd Method of controlling semiconductor vapor phase growth
FR2463819A1 (fr) * 1979-08-21 1981-02-27 Thomson Csf Reacteur de depot chimique en phase vapeur fonctionnant sous basse pression
US4411729A (en) * 1979-09-29 1983-10-25 Fujitsu Limited Method for a vapor phase growth of a compound semiconductor
US4386255A (en) * 1979-12-17 1983-05-31 Rca Corporation Susceptor for rotary disc reactor
US4263872A (en) * 1980-01-31 1981-04-28 Rca Corporation Radiation heated reactor for chemical vapor deposition on substrates
US4401689A (en) * 1980-01-31 1983-08-30 Rca Corporation Radiation heated reactor process for chemical vapor deposition on substrates
US4275282A (en) * 1980-03-24 1981-06-23 Rca Corporation Centering support for a rotatable wafer support susceptor
US4309240A (en) * 1980-05-16 1982-01-05 Advanced Crystal Sciences, Inc. Process for chemical vapor deposition of films on silicon wafers
US4339645A (en) * 1980-07-03 1982-07-13 Rca Corporation RF Heating coil construction for stack of susceptors
US4354455A (en) * 1981-02-17 1982-10-19 Rca Corporation Apparatus for oscillating a gas manifold in a rotary disc reactor
US4466876A (en) * 1981-03-17 1984-08-21 Clarion Co., Ltd. Thin layer depositing apparatus
DD206687A3 (de) * 1981-07-28 1984-02-01 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur gasfuehrung fuer lp cvd prozesse in einem rohrreaktor
US4387962A (en) * 1981-10-06 1983-06-14 The United States Of America As Represented By The Secretary Of The Air Force Corrosion resistant laser mirror heat exchanger
EP0077408A1 (en) * 1981-10-16 1983-04-27 Helmut Seier GmbH A method and apparatus for the heat treatment of semiconductor articles
US4499354A (en) * 1982-10-06 1985-02-12 General Instrument Corp. Susceptor for radiant absorption heater system
US4499853A (en) * 1983-12-09 1985-02-19 Rca Corporation Distributor tube for CVD reactor
FR2566808B1 (fr) * 1984-06-27 1986-09-19 Mircea Andrei Procede et reacteur de croissance epitaxiale en phase vapeur
US4592933A (en) * 1984-06-29 1986-06-03 International Business Machines Corporation High efficiency homogeneous chemical vapor deposition
US4640223A (en) * 1984-07-24 1987-02-03 Dozier Alfred R Chemical vapor deposition reactor
US4615294A (en) * 1984-07-31 1986-10-07 Hughes Aircraft Company Barrel reactor and method for photochemical vapor deposition
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US5169685A (en) * 1989-06-12 1992-12-08 General Electric Company Method for forming non-columnar deposits by chemical vapor deposition
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US5192087A (en) * 1990-10-02 1993-03-09 Nippon Steel Corporation Device for supporting a wafer
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CN106245111A (zh) * 2016-10-10 2016-12-21 无锡宏纳科技有限公司 低压化学气相沉淀腔的晶圆支撑结构
JP6925214B2 (ja) 2017-09-22 2021-08-25 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP7180984B2 (ja) * 2018-03-01 2022-11-30 株式会社ニューフレアテクノロジー 気相成長方法
JP7109331B2 (ja) * 2018-10-02 2022-07-29 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7209598B2 (ja) * 2019-07-26 2023-01-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR102782608B1 (ko) * 2019-10-14 2025-03-14 삼성전자주식회사 반도체 제조 장비
CN111270220A (zh) * 2020-03-27 2020-06-12 上海华力微电子有限公司 化学气相淀积装置及其调节方法
CN215925072U (zh) * 2020-09-24 2022-03-01 株式会社国际电气 基板处理装置
JP7740821B2 (ja) * 2021-06-29 2025-09-17 東京エレクトロン株式会社 成膜装置
CN113862643A (zh) * 2021-09-18 2021-12-31 江苏微导纳米科技股份有限公司 原子层沉积装置及其匀流机构

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691417A (en) * 1979-12-26 1981-07-24 Fujitsu Ltd Heating treatment device for wafer
JPS61136676A (ja) * 1984-12-07 1986-06-24 Sumitomo Metal Ind Ltd 気相成長装置
JPS61191015A (ja) * 1985-02-20 1986-08-25 Hitachi Ltd 半導体の気相成長方法及びその装置

Also Published As

Publication number Publication date
DE2750882A1 (de) 1978-05-24
US4062318A (en) 1977-12-13
US4082865A (en) 1978-04-04
SE7711884L (sv) 1978-05-20
JPS5541297B2 (enExample) 1980-10-23
IN146060B (enExample) 1979-02-10
GB1560982A (en) 1980-02-13

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